scholarly journals Theoretical and experimental studies on hydrogen migration in dissociative ionization of the methanol monocation to molecular ions H3+ and H2O+

RSC Advances ◽  
2019 ◽  
Vol 9 (29) ◽  
pp. 16683-16689 ◽  
Author(s):  
Hua Wu ◽  
Yuanxin Xue ◽  
Junqing Wen ◽  
Hui Wang ◽  
Qingfei Fan ◽  
...  

Hydrogen migration processes of methanol monocation CH3OH+ to H3+, COH+, H2O+ and CH2+ were studied theoretically and experimentally.

1983 ◽  
Vol 38 (5) ◽  
pp. 635-638 ◽  
Author(s):  
Bernhard Ciommer ◽  
Helmut Schwarz

Abstract The long-sought ethylen fluoronium ion (2) is generated as an intermediate in the dissociative ionization of 1-fluoro-2-(p-methyl)phenoxy ethane (4). However, prior to collisionally induced dissociation 2 undergoes ring-opening, associated with hydrogen migration, to form 1-fluoroethyl cation (3). Other decomposition pathways of the molecular ions of 4 involve (i) direct formation of 3 via a combination of C-O-cleavage (loss of ArO -) and [1,2] hydrogen migration (18%) and (ii) complete positional loss of the a-and β-methylene hydrogen atoms (34%). The remaining 48% of the molecular ions of 4 dissociate via anchimeric assistance of the fluorine in the elimination of ArO·, thus giving rise to the formation of 2.


1996 ◽  
Author(s):  
Nada Djurić ◽  
Yang-Soo Chung ◽  
Barry Wallbank ◽  
Gordon H. Dunn

1977 ◽  
Vol 32 (10) ◽  
pp. 1156-1159 ◽  
Author(s):  
Neil G. Keats ◽  
Jean E. Rockley ◽  
Lindsay A. Summers

The base peaks in the mass spectra of Ν,N′-diphenylformamidine, N,N′-di-(4-chlorophenyl)formamidine and N,N′-di-(3-chlorophenyl)formamidine are due to the molecular ions of aniline, 4-chloroaniline and 3-chloroaniline respectively. The species responsible for the base peaks are thought to be formed by rupture of the CH-NH bond with concomitant hydrogen migration.


1992 ◽  
Vol 262 ◽  
Author(s):  
N. M. Johnson

ABSTRACTPhenomena associated with hydrogen in compound semiconductors include the formation of complexes with both dopant impurities and deep-level defects, the generation of hydrogen-related deep-level defects, and the migration of isolated hydrogen as a charged species. In addition to reviewing these phenomena, this paper describes the depletion-layer technique for determining thermal dissociation energies of hydrogen-impurity complexes and presents an updated tabulation of the parameters that have thus far been obtained from experimental studies to quantitatively describe hydrogen-dopant complexes and hydrogen migration in GaAs.


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