Hydrogen in Compound Semiconductors

1992 ◽  
Vol 262 ◽  
Author(s):  
N. M. Johnson
Keyword(s):  
Deep Level ◽  
Thermal Dissociation ◽  
Experimental Studies ◽  
Compound Semiconductors ◽  
Hydrogen Impurity ◽  
Charged Species ◽  
Hydrogen Migration ◽  
Dissociation Energies ◽  
Layer Technique ◽  
Formation Of Complexes

ABSTRACTPhenomena associated with hydrogen in compound semiconductors include the formation of complexes with both dopant impurities and deep-level defects, the generation of hydrogen-related deep-level defects, and the migration of isolated hydrogen as a charged species. In addition to reviewing these phenomena, this paper describes the depletion-layer technique for determining thermal dissociation energies of hydrogen-impurity complexes and presents an updated tabulation of the parameters that have thus far been obtained from experimental studies to quantitatively describe hydrogen-dopant complexes and hydrogen migration in GaAs.

scholarly journals Влияние нейтронного облучения на спектр дефектов с глубокими уровнями в GaAs, изготовленном методом жидкофазной эпитаксии в атмосфере водорода и аргона

2022 ◽  
Vol 56 (1) ◽  
pp. 53
Author(s):  
М.М. Соболев ◽  
Ф.Ю. Солдатенков
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Experimental Studies ◽  
Shallow Donor ◽  
Defect Clusters ◽  
Deep Traps ◽  
Capacitance Voltage ◽  
Before And After ◽  
Transient Spectroscopy ◽  
Different Doses

The results of experimental studies of capacitance– voltage characteristics, spectra of deep-level transient spectroscopy of graded high-voltage GaAs p+−p0−i−n0 diodes fabricated by liquid-phase epitaxy at a crystallization temperature of 900C from one solution–melt due to autodoping with background impurities, in a hydrogen or argon ambient, before and after irradiation with neutrons. After neutron irradiation, deep-level transient spectroscopy spectra revealed wide zones of defect clusters with acceptor-like negatively charged traps in the n0-layer, which arise as a result of electron emission from states located above the middle of the band gap. It was found that the differences in capacitance–voltage characteristics of the structures grown in hydrogen or argon ambient after irradiation are due to different doses of irradiation of GaAs p+−p0−i−n0 structures and different degrees of compensation of shallow donor impurities by deep traps in the layers.

scholarly journals Theoretical and experimental studies on hydrogen migration in dissociative ionization of the methanol monocation to molecular ions H3+ and H2O+

RSC Advances ◽  
2019 ◽  
Vol 9 (29) ◽  
pp. 16683-16689 ◽  
Author(s):  
Hua Wu ◽  
Yuanxin Xue ◽  
Junqing Wen ◽  
Hui Wang ◽  
Qingfei Fan ◽  
...  
Keyword(s):  
Experimental Studies ◽  
Molecular Ions ◽  
Dissociative Ionization ◽  
Hydrogen Migration

Hydrogen migration processes of methanol monocation CH3OH+ to H3+, COH+, H2O+ and CH2+ were studied theoretically and experimentally.

scholarly journals Manipulating interfacial hydrogens at palladium via STM

2015 ◽  
Vol 17 (21) ◽  
pp. 13973-13983 ◽  
Author(s):  
Jean Christophe Tremblay ◽  
María Blanco-Rey
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Dynamical Analysis ◽  
Scanning Tunneling ◽  
Strong Indication ◽  
Hydrogen Impurity ◽  
Tunneling Microscopy ◽  
Hydrogen Migration ◽  
Quantum Dynamical

In this contribution, we provide a quantum dynamical analysis of the interfacial hydrogen migration mediated by scanning tunneling microscopy (STM). It is observed that the hydrogen impurity favors resurfacing over occupation of the bulk and subsurface sites whenever possible. The present simulations give strong indication that the experimentally observed protuberances after STM-excitation are due to H accumulating in the vicinity of the surface.

Hydrogen impurity check on sodium coolant through thermal dissociation of the hydride

1968 ◽  
Vol 24 (3) ◽  
pp. 274-278 ◽  
Author(s):  
M. N. Ivanovskii ◽  
G. D. Pavlova ◽  
B. A. Shmatko ◽  
A. V. Milovidova ◽  
�. E. Konovalov ◽  
...  
Keyword(s):  
Thermal Dissociation ◽  
Sodium Coolant ◽  
Hydrogen Impurity

Hydrogen Passivation and Reactivation of DX Centers in Se-Doped and Si-Doped AlGaAs - - A Comparison

1992 ◽  
Vol 262 ◽  
Author(s):  
G. Roos ◽  
N. M. Johnsons ◽  
C. Herring ◽  
J. S. Harris
Keyword(s):  
Space Charge ◽  
Schottky Diodes ◽  
Thermal Dissociation ◽  
Group Iv ◽  
Hydrogen Passivation ◽  
Group Vi ◽  
Dx Centers ◽  
Charge Layer ◽  
Dissociation Energies ◽  
Si Doped

ABSTRACTThe effect of hydrogenation on DX centers was evaluated for both Si- and Se-doped AlxGa1-xAs (x=0.26 and 0.23). MBE-grown AIGaAs:Si and MOCVD-grown AIGaAs:Se epilayers were hydrogenated with either monatomic hydrogen or deuterium from a remote plasma at 250°C for 1h. The passivation and subsequent reactivation kinetics were studied with C-V and DLTS techniques. Reactivation was investigated in the space-charge layer of Schottky diodes under different bias conditions. While the Group VI and Group IV deep donors respond similarly to passivation, they display significantly different reactivation kinetics, with thermal dissociation energies of 1.5 eV and 1.2 eV for Se-H and Si-H, respectively. These values are close to the energies previously determined for reactivation of the Si and Se shallow donors in both AIGaAs and GaAs. Therefore, they are not significantly dependent on the Al concentration (x < 0.30) even for donors residing on the As sublattice. Our results are consistent with the Chang-Chadi model of DX centers.

Alloy Fluctuation in Mixed Compound Semiconductors as Studied by Deep Level Transient Spectroscopy

1984 ◽  
Vol 23 (Part 2, No. 1) ◽  
pp. L29-L31 ◽  
Author(s):  
Junji Yoshino ◽  
Masami Tachikawa ◽  
Naotoshi Matsuda ◽  
Masashi Mizuta ◽  
Hiroshi Kukimoto
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Compound Semiconductors ◽  
Mixed Compound ◽  
Transient Spectroscopy

scholarly journals Deep level relaxation spectroscopy and nondestructive testing of potential defects in the semiconductor electronic component base

2019 ◽  
Vol 29 (2) ◽  
pp. 35-44
Author(s):  
V. P. Krylov ◽  
A. M. Bogachev ◽  
T. Yu. Pronin
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Experimental Studies ◽  
Electronic Component ◽  
Semiconductor Electronic ◽  
Accuracy Of Measurements ◽  
Industrial Monitoring ◽  
Relaxation Responses ◽  
Transient Spectroscopy ◽  
Temperature Scanning

This article deals with the possibilities of methods of the deep-level transient spectroscopy in semiconductors and the reasons constraining their application for industrial control of potential defects of the semiconductor electronic component base. Among the reasons there are an ambiguous interpretation of the results of indirect measurements, the lack of the domestic regulatory base and software and hardware tools, a variety of algorithms and techniques of measurements and processing of results. Models of hardware transformations of weak relaxation responses of microelectronic barrier structures are proposed. The methodology and results of experimental studies of the characteristics of potential defects of serial semiconductor diodes by the method of frequency-temperature scanning using the developed models are described. The obtained results indicate the possibility of a significant increase in accuracy of measurements of parameters of potential defects. The conclusion is made about the need to organize and perform interlaboratory checking on uniform samples to promote the methods of the deep-level transient spectroscopy in the practice of industrial monitoring.

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