Characterization of tunnel-oxide degradation due to plasma field oxide recess in flash memory devices

2012 ◽  
Vol 520 (15) ◽  
pp. 5007-5010 ◽  
Author(s):  
Jeungyun Lee ◽  
Dong-Kwon Kim ◽  
Gyung-Jin Min ◽  
Ilsub Chung
Keyword(s):  
Flash Memory ◽  
Memory Devices ◽  
Oxide Degradation ◽  
Field Oxide

Optical capacitance-voltage characterization of charge traps in the trapping nitride layer of charge trapped flash memory devices

2007 ◽  
Vol 91 (22) ◽  
pp. 223511 ◽  
Author(s):  
Jang Uk. Lee ◽  
Kang Seob Roh ◽  
Gu Cheol Kang ◽  
Seung Hwan Seo ◽  
Kwan Young Kim ◽  
...  
Keyword(s):  
Flash Memory ◽  
Nitride Layer ◽  
Memory Devices ◽  
Capacitance Voltage

The origin of oxide degradation during time interval between program/erase cycles in NAND Flash memory devices

2021 ◽  
Author(s):  
Yung-Yueh Chiu ◽  
Hung-Te-En Tsai ◽  
Kai-Chieh Chang ◽  
kumari Roshni ◽  
Hsin-Chiao Li ◽  
...  
Keyword(s):  
Flash Memory ◽  
Time Interval ◽  
Memory Devices ◽  
Nand Flash ◽  
Nand Flash Memory ◽  
Oxide Degradation

Adaptive Interference Mitigation for Multilevel Flash Memory Devices

2011 ◽  
Vol E94-A (11) ◽  
pp. 2453-2457
Author(s):  
Myeongwoon JEON ◽  
Kyungchul KIM ◽  
Sungkyu CHUNG ◽  
Seungjae CHUNG ◽  
Beomju SHIN ◽  
...  
Keyword(s):  
Flash Memory ◽  
Interference Mitigation ◽  
Memory Devices

Characterization of Random Telegraph Noise Generated by Process- and Cycling-Stress-Induced Traps in 26 nm NAND Flash Memory

2013 ◽  
Vol 52 (4S) ◽  
pp. 04CA07 ◽  
Author(s):  
Bong-Su Jo ◽  
Ho-Jung Kang ◽  
Sung-Min Joe ◽  
Min-Kyu Jeong ◽  
Kyung-Rok Han ◽  
...  
Keyword(s):  
Flash Memory ◽  
Nand Flash ◽  
Nand Flash Memory ◽  
Random Telegraph Noise ◽  
Telegraph Noise

Characterization of SiOx/HfOx Bilayer Resistive-Switching Memory Devices

2016 ◽  
Vol 72 (2) ◽  
pp. 25-33 ◽  
Author(s):  
Y.-C. Chen ◽  
Y.-F. Chang ◽  
X. Wu ◽  
M. Guo ◽  
B. Fowler ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Memory Devices ◽  
Resistive Switching Memory ◽  
Switching Memory

Fabrication and characterization of 3D fin-channel MANOS type flash memory

2014 ◽  
Author(s):  
Y. X. Liu ◽  
T. Nabatame ◽  
T. Matsukawa ◽  
K. Endo ◽  
S. O'uchi ◽  
...  
Keyword(s):  
Flash Memory ◽  
Fabrication And Characterization
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