Dynamics of bias instability in the tungsten-indium-zinc oxide thin film transistor

2019 ◽  
Vol 7 (4) ◽  
pp. 1006-1013 ◽  
Author(s):  
Hyun-Woo Park ◽  
Sera Kwon ◽  
Aeran Song ◽  
Dukhyun Choi ◽  
Kwun-Bum Chung
Keyword(s):  
Thin Film ◽  
Degradation Mechanism ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Gate Bias ◽  
Time Gate ◽  
Bias Stress ◽  
Indium Zinc Oxide ◽  
Bias Instability ◽  
Channel Region

The key to full understanding of the degradation mechanism of oxide thin film transistors (Ox-TFTs) by gate bias stress is to investigate dynamical changes of the electron trap site at the channel region while a real-time gate bias is applied to the actual thin film transistor (TFT) structure.

scholarly journals Effect of top gate potential on bias-stress for dual gate amorphous indium-gallium-zinc-oxide thin film transistor

AIP Advances ◽  
2016 ◽  
Vol 6 (7) ◽  
pp. 075217 ◽  
Author(s):  
Minkyu Chun ◽  
Jae Gwang Um ◽  
Min Sang Park ◽  
Md Delwar Hossain Chowdhury ◽  
Jin Jang
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Zinc Oxide Thin Film ◽  
Bias Stress ◽  
Dual Gate ◽  
Gate Potential ◽  
Indium Gallium

Investigating the degradation behavior caused by charge trapping effect under DC and AC gate-bias stress for InGaZnO thin film transistor

2011 ◽  
Vol 99 (2) ◽  
pp. 022104 ◽  
Author(s):  
Te-Chih Chen ◽  
Ting-Chang Chang ◽  
Tien-Yu Hsieh ◽  
Wei-Siang Lu ◽  
Fu-Yen Jian ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Charge Trapping ◽  
Gate Bias ◽  
Degradation Behavior ◽  
Bias Stress ◽  
Trapping Effect ◽  
Gate Bias Stress

Degradation behavior and degradation mechanism of bridged-grain polycrystalline silicon thin film transistors under AC gate bias stress

2017 ◽  
Vol 32 (2) ◽  
pp. 91-96
Author(s):  
张猛 ZHANG Meng ◽  
夏之荷 XIA Zhi-he ◽  
周玮 ZHOU Wei ◽  
陈荣盛 CHEN Rong-sheng ◽  
王文 WONG Man ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Degradation Mechanism ◽  
Gate Bias ◽  
Degradation Behavior ◽  
Silicon Thin Film ◽  
Bias Stress ◽  
Gate Bias Stress

Capillary-Force-Pattern Formation of Indium-Zinc-Oxide Thin-Film Transistor

2019 ◽  
Vol 19 (4) ◽  
pp. 2179-2182
Author(s):  
Hyunji Shin ◽  
Dongwook Kim ◽  
Jaehoon Park ◽  
Seong-Ho Song ◽  
Jong Sun Choi
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Pattern Formation ◽  
Capillary Force ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Zinc Oxide Thin Film ◽  
Indium Zinc Oxide
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