Lu2O3: A promising ultrawide bandgap semiconductor for deep UV photodetector

2021 ◽  
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pp. 211906
Author(s):  
Dan Zhang ◽  
Wanmin Lin ◽  
Zhuogeng Lin ◽  
Lemin Jia ◽  
Wei Zheng ◽  
...  
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2016 ◽  
Vol 49 (42) ◽  
pp. 425105 ◽  
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Jianyu Du ◽  
Jie Xing ◽  
Chen Ge ◽  
Hao Liu ◽  
Pengyu Liu ◽  
...  

1995 ◽  
Vol 416 ◽  
Author(s):  
Robert D. Mckeag ◽  
Michael D. Whitfield ◽  
Simon Sm Chan ◽  
Lisa Ys Pang ◽  
Richard B. Jackman

ABSTRACTThin film diamond has been used to fabricate a photodetector which displays high sensitivity to deep UV light, with an external quantum efficiency of greater than one, a dark current of less than 0.1nA and which is near ‘blind’ to visible light.


2017 ◽  
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Sriram Krishnamoorthy ◽  
Swanand Vishnu Solanke ◽  
Zhanbo Xia ◽  
Rangarajan Muralidharan ◽  
...  

2016 ◽  
Vol 28 (48) ◽  
pp. 10725-10731 ◽  
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Wei-Yu Kong ◽  
Guo-An Wu ◽  
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Shuchi Kaushik ◽  
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...  

RSC Advances ◽  
2019 ◽  
Vol 9 (3) ◽  
pp. 1394-1402 ◽  
Author(s):  
Xu Han ◽  
Shuanglong Feng ◽  
Yiming Zhao ◽  
Lei Li ◽  
Zhaoyao Zhan ◽  
...  

Ternary oxide Zn2GeO4 with a wide bandgap of 4.84 eV, as a candidate for fourth generation semiconductors, has attracted lots of attention for deep UV photodetector applications, as it is blind to the UV-A/B band and only responds to the UV-C band.


2018 ◽  
Vol 28 (14) ◽  
pp. 1706379 ◽  
Author(s):  
Mengxiao Chen ◽  
Bin Zhao ◽  
Guofeng Hu ◽  
Xiaosheng Fang ◽  
Hui Wang ◽  
...  
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