Critical thickness for pseudomorphic growth of Si/Ge alloys and superlattices

1988 ◽  
Vol 64 (6) ◽  
pp. 3043-3050 ◽  
Author(s):  
R. H. M. van de Leur ◽  
A. J. G. Schellingerhout ◽  
F. Tuinstra ◽  
J. E. Mooij
Nanoscale ◽  
2019 ◽  
Vol 11 (8) ◽  
pp. 3748-3756
Author(s):  
Ailton J. Garcia Jr. ◽  
Leonarde N. Rodrigues ◽  
Saimon Filipe Covre da Silva ◽  
Sergio L. Morelhão ◽  
Odilon D. D. Couto Jr. ◽  
...  

Overcoming the critical thickness limit in pseudomorphic growth of lattice mismatched heterostructures is a fundamental challenge in heteroepitaxy.


1996 ◽  
Vol 423 ◽  
Author(s):  
Chinkyo Kim ◽  
I. K. Robinson ◽  
Jaemin Myoung ◽  
Kyuhwan Shim ◽  
Kyekyoon Kim ◽  
...  

AbstractIn some materials, Van der Merwe's equilibrium theory of strain relief is believed to explain the sudden transition from pseudomorphic growth of a thin film to a progressively relaxed state. We show, for the first time for GaN, how an accurate estimate of the critical thickness of a thin film can be extrapolated from suitable measurements of lattice constants as a function of film thickness using synchrotron X-ray. We do this both for an elementary elastic energy function, in which the interactions between the dislocations are ignored, and for a more realistic energy estimate due to Kasper. The method is found to work quantitatively for thin films of GaN on AIN. The critical thickness is determined to be 29 ± 4 Å.


1983 ◽  
Vol 25 ◽  
Author(s):  
A. T. Fiory ◽  
L. C. Feldman ◽  
J. C. Bean ◽  
I. K. Robinson

ABSTRACTStructure of GexSi1-x alloy films grown on (100) Si by molecular beam epitaxy is analyzed by MeV He+ ion channeling and X-ray diffraction as functions of Ge concentration, film thickness and growth temperature. Critical thicknesses for pseudomorphic growth are determined for x ≤ 0.5, where coherent tetragonally-strained layers are observed. The average strain decreases approximately as the square-root of thickness when the critical thickness is exceeded. At temperatures near the threshold for islanding growth, surface roughness appears as a precursor to degradation of strained-layer epitaxy. No effect on the amount of the tetragonal strain was found in a study of ion-beam damage.


2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Chen-Yuan Hsieh ◽  
Pei-Cheng Jiang ◽  
Wei-Hsiang Chen ◽  
Jyh-Shen Tsay

AbstractBy way of introducing heterogeneous interfaces, the stabilization of crystallographic phases is critical to a viable strategy for developing materials with novel characteristics, such as occurrence of new structure phase, anomalous enhancement in magnetic moment, enhancement of efficiency as nanoportals. Because of the different lattice structures at the interface, heterogeneous interfaces serve as a platform for controlling pseudomorphic growth, nanostructure evolution and formation of strained clusters. However, our knowledge related to the strain accumulation phenomenon in ultrathin Fe layers on face-centered cubic (fcc) substrates remains limited. For Fe deposited on Ir(111), here we found the existence of strain accumulation at the interface and demonstrate a strain driven phase transition in which fcc-Fe is transformed to a bcc phase. By substituting the bulk modulus and the shear modulus and the experimental results of lattice parameters in cubic geometry, we obtain the strain energy density for different Fe thicknesses. A limited distortion mechanism is proposed for correlating the increasing interfacial strain energy, the surface energy, and a critical thickness. The calculation shows that the strained layers undergo a phase transition to the bulk structure above the critical thickness. The results are well consistent with experimental measurements. The strain driven phase transition and mechanism presented herein provide a fundamental understanding of strain accumulation at the bcc/fcc interface.


1990 ◽  
Vol 202 ◽  
Author(s):  
C. Snyder ◽  
J. Pamulapati ◽  
B. Orr ◽  
P. K. Bhattacharya ◽  
J. Singh

ABSTRACTIn this paper we examine the role of strain and growth kinetics on the growth modes in pseudomorphic growth. Regimes below critical thickness and above critical thickness are examined. Based on atomistic modelling and in-situ RHEED and STM studies we show that a competition between surface chemical energy and strain energy is shown to lead to 3-dimensional blend mode for high strain pseudomorphy. Consequences for dislocation generation are discussed.


2003 ◽  
Vol 793 ◽  
Author(s):  
Elena I. Rogacheva ◽  
Olga N. Nashchekina ◽  
Svetlana G. Lyubchenko ◽  
Yegor O. Vekhov ◽  
Mildred S. Dresselhaus ◽  
...  

ABSTRACTThe dependences of the thermoelectric properties of (001)KCl/PbTe/SnTe/PbTe three-layer structures on the SnTe layer thickness (dSnTe = 0.5–6.0 nm) at a fixed thickness of PbTe layers were studied. It was established that the thickness dependences of the Seebeck coefficient, the Hall coefficient, electrical conductivity, charge carrier mobility, and the thermoelectric power factor are distinctly non-monotonic. Two possible reasons for this non-monotonic behavior of the thickness dependences of the thermoelectric properties are considered: the size quantization of the energy spectrum in a SnTe quantum well and / or the formation of edge misfit dislocations at the interfaces after reaching the critical thickness, which corresponds to the transition from a pseudomorphic growth to the introduction of misfit dislocations at the interfaces. It is suggested that the observed effect has a general character and should be taken into account when optimizing thermoelectric properties of superlattices.


1985 ◽  
Vol 56 ◽  
Author(s):  
MASAKO OKAMOTO ◽  
SHIN HASHIMOTO ◽  
B.D. HUNT ◽  
L.J. SCHOWALTER ◽  
W.M. GIBSON

AbstractStrains in both type-A and type-B NiSi2 epitaxial films grown on Si(lll) substrates were measured by means of MeV 4He+ ion channeling. The results show the critical thickness to maintain pseudomorphic growth strongly depends on theepitaxial orientation of the NiSi2 film. The difference in critical thicknesses between type-A and type-B NiSi2 can be explained by considering the different type of misfit dislocations introduced at the interface. Namely, at the type-B interface, 1/<112> partial dislocations associated with interface steps are allowed while they are prohibited at the type-A interface. Dislocation densities measured by TEM also support these results.


Author(s):  
C. Boulesteix ◽  
C. Colliex ◽  
C. Mory ◽  
B. Pardo ◽  
D. Renard

Contrast mechanisms, which are responsible of the various types of image formation, are generally thickness dependant. In the following, two imaging modes in the 100 kV CTEM are described : they are highly sensitive to thickness variations and can be used for quantitative estimations of step heights.Detailed calculations (1) of the bright-field intensity have been carried out in the 3 (or 2N+l)-beam symmetric case. They show that in given conditions, the two important symmetric Bloch waves interfere most strongly at a critical thickness for which they have equal emergent amplitudes (the more excited wave at the entrance surface is also the more absorbed). The transmitted intensity I for a Nd2O3 specimen has been calculated as a function of thickness t. The capacity of the method to detect a step and measure its height can be more clearly deduced from a plot of dl/Idt as shown in fig. 1.


Author(s):  
J.M. Bonar ◽  
R. Hull ◽  
R. Malik ◽  
R. Ryan ◽  
J.F. Walker

In this study we have examined a series of strained heteropeitaxial GaAs/InGaAs/GaAs and InGaAs/GaAs structures, both on (001) GaAs substrates. These heterostructures are potentially very interesting from a device standpoint because of improved band gap properties (InAs has a much smaller band gap than GaAs so there is a large band offset at the InGaAs/GaAs interface), and because of the much higher mobility of InAs. However, there is a 7.2% lattice mismatch between InAs and GaAs, so an InxGa1-xAs layer in a GaAs structure with even relatively low x will have a large amount of strain, and misfit dislocations are expected to form above some critical thickness. We attempt here to correlate the effect of misfit dislocations on the electronic properties of this material.The samples we examined consisted of 200Å InxGa1-xAs layered in a hetero-junction bipolar transistor (HBT) structure (InxGa1-xAs on top of a (001) GaAs buffer, followed by more GaAs, then a layer of AlGaAs and a GaAs cap), and a series consisting of a 200Å layer of InxGa1-xAs on a (001) GaAs substrate.


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