Numerically efficient representation of anisotropic valence bands in semiconductor quantum-well optoelectronic devices

2006 ◽  
Vol 18 (12) ◽  
pp. 1374-1376 ◽  
Author(s):  
P.J. Bream ◽  
S. Sujecki ◽  
E.C. Larkins
Nanoscale ◽  
2018 ◽  
Vol 10 (26) ◽  
pp. 12657-12664 ◽  
Author(s):  
Jiushuang Zhang ◽  
Yun Xu ◽  
Yu Jiang ◽  
Lin Bai ◽  
Huamin Chen ◽  
...  

For optoelectronic devices, an attractive research field involves the flexible adjustment of the band gap in semiconductor quantum well (QW) structures by strain engineering.


1992 ◽  
Vol 2 (9) ◽  
pp. 1727-1738 ◽  
Author(s):  
A. Accard ◽  
F. Brillouet ◽  
E. Duda ◽  
B. Fernier ◽  
G. Gelly ◽  
...  

1996 ◽  
Author(s):  
Alexandr L. Karuzskii ◽  
V. A. Dravin ◽  
A. S. Ignatyev ◽  
A. E. Krapivka ◽  
Yu. A. Mityagin ◽  
...  

1994 ◽  
Author(s):  
Matthew E. Grupen ◽  
Umberto Ravaioli ◽  
Albert Galick ◽  
Karl Hess ◽  
Tom Kerkhoven

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