scholarly journals Exciton photoluminescence and benign defect complex formation in zinc tin nitride

2018 ◽  
Vol 5 (5) ◽  
pp. 823-830 ◽  
Author(s):  
Angela N. Fioretti ◽  
Jie Pan ◽  
Brenden R. Ortiz ◽  
Celeste L. Melamed ◽  
Patricia C. Dippo ◽  
...  
Keyword(s):  
Complex Formation ◽  
Defect Complex ◽  
Zinc Tin Nitride ◽  
Tin Nitride

Exciton photoluminescence is observed in disordered zinc tin nitride as a result of benign defect complex formation encouraged by annealing.

Ionic conductivity of acceptor doped sodium bismuth titanate: influence of dopants, phase transitions and defect associates

2017 ◽  
Vol 5 (35) ◽  
pp. 8958-8965 ◽  
Author(s):  
Leonie Koch ◽  
Sebastian Steiner ◽  
Kai-Christian Meyer ◽  
In-Tae Seo ◽  
Karsten Albe ◽  
...  
Keyword(s):  
Phase Transitions ◽  
Ionic Conductivity ◽  
Complex Formation ◽  
Bismuth Titanate ◽  
Dopant Concentration ◽  
Phase Coexistence ◽  
Defect Complex ◽  
Temperature Dependent ◽  
Sodium Bismuth Titanate ◽  
Formation Phase

The temperature dependent ionic conductivity of NBT results from an interplay of defect complex formation, phase coexistence, and dopant concentration.

Implications of Accelerated Recombination-Active Defect Complex Formation for Mitigating Carrier-Induced Degradation in Silicon

2016 ◽  
Vol 6 (1) ◽  
pp. 92-99 ◽  
Author(s):  
Brett J. Hallam ◽  
Malcolm D. Abbott ◽  
Nitin Nampalli ◽  
Phill G. Hamer ◽  
Stuart R. Wenham
Keyword(s):  
Complex Formation ◽  
Defect Complex ◽  
Active Defect

Suppressing the carrier concentration of zinc tin nitride thin films by excess zinc content and low temperature growth

2019 ◽  
Vol 115 (23) ◽  
pp. 232104 ◽  
Author(s):  
Yong Wang ◽  
Takeo Ohsawa ◽  
Xiangyue Meng ◽  
Fahad Alnjiman ◽  
Jean-Francois Pierson ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Carrier Concentration ◽  
Zinc Content ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Zinc Tin Nitride ◽  
Tin Nitride ◽  
Excess Zinc

scholarly journals Electrically Benign Defect Behavior in Zinc Tin Nitride Revealed from First Principles

2018 ◽  
Vol 10 (1) ◽  
Author(s):  
Naoki Tsunoda ◽  
Yu Kumagai ◽  
Akira Takahashi ◽  
Fumiyasu Oba
Keyword(s):  
First Principles ◽  
Zinc Tin Nitride ◽  
Tin Nitride ◽  
Defect Behavior

scholarly journals Combinatorial insights into doping control and transport properties of zinc tin nitride

2015 ◽  
Vol 3 (42) ◽  
pp. 11017-11028 ◽  
Author(s):  
Angela N. Fioretti ◽  
Andriy Zakutayev ◽  
Helio Moutinho ◽  
Celeste Melamed ◽  
John D. Perkins ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Transport Properties ◽  
Carrier Density ◽  
Doping Control ◽  
Optical Bandgap ◽  
Wurtzite Crystal Structure ◽  
Zinc Tin Nitride ◽  
Tin Nitride ◽  
Deposited Films

A combinatorial study on semiconducting ZnSnN2, in which the lowest carrier density yet reported for as-deposited films is achieved, wurtzite crystal structure is confirmed, and optical bandgap is established at 1.0 eV.

Temperature and dose dependence of defect complex formation with ion implanted Mn/Fe in ZnO

2009 ◽  
Vol 404 (23-24) ◽  
pp. 4820-4822 ◽  
Author(s):  
T.E. Mølholt ◽  
R. Mantovan ◽  
H.P. Gunnlaugsson ◽  
K. Bharuth-Ram ◽  
M. Fanciulli ◽  
...  
Keyword(s):  
Complex Formation ◽  
Dose Dependence ◽  
Defect Complex ◽  
Ion Implanted

Modelling of point defect complex formation and its application to H+ ion implanted silicon

2015 ◽  
Vol 99 ◽  
pp. 187-195 ◽  
Author(s):  
N. Cherkashin ◽  
F.-X. Darras ◽  
P. Pochet ◽  
S. Reboh ◽  
N. Ratel-Ramond ◽  
...  
Keyword(s):  
Complex Formation ◽  
Point Defect ◽  
Defect Complex ◽  
Ion Implanted
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