zinc tin nitride
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Suppressing the carrier concentration of zinc tin nitride thin films by excess zinc content and low temperature growth

2019 ◽  
Vol 115 (23) ◽  
pp. 232104 ◽  
Author(s):  
Yong Wang ◽  
Takeo Ohsawa ◽  
Xiangyue Meng ◽  
Fahad Alnjiman ◽  
Jean-Francois Pierson ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Carrier Concentration ◽  
Zinc Content ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Zinc Tin Nitride ◽  
Tin Nitride ◽  
Excess Zinc

scholarly journals Electrically Benign Defect Behavior in Zinc Tin Nitride Revealed from First Principles

2018 ◽  
Vol 10 (1) ◽  
Author(s):  
Naoki Tsunoda ◽  
Yu Kumagai ◽  
Akira Takahashi ◽  
Fumiyasu Oba
Keyword(s):  
First Principles ◽  
Zinc Tin Nitride ◽  
Tin Nitride ◽  
Defect Behavior

scholarly journals Exciton photoluminescence and benign defect complex formation in zinc tin nitride

2018 ◽  
Vol 5 (5) ◽  
pp. 823-830 ◽  
Author(s):  
Angela N. Fioretti ◽  
Jie Pan ◽  
Brenden R. Ortiz ◽  
Celeste L. Melamed ◽  
Patricia C. Dippo ◽  
...  
Keyword(s):  
Complex Formation ◽  
Defect Complex ◽  
Zinc Tin Nitride ◽  
Tin Nitride

Exciton photoluminescence is observed in disordered zinc tin nitride as a result of benign defect complex formation encouraged by annealing.

scholarly journals Combinatorial insights into doping control and transport properties of zinc tin nitride

2015 ◽  
Vol 3 (42) ◽  
pp. 11017-11028 ◽  
Author(s):  
Angela N. Fioretti ◽  
Andriy Zakutayev ◽  
Helio Moutinho ◽  
Celeste Melamed ◽  
John D. Perkins ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Transport Properties ◽  
Carrier Density ◽  
Doping Control ◽  
Optical Bandgap ◽  
Wurtzite Crystal Structure ◽  
Zinc Tin Nitride ◽  
Tin Nitride ◽  
Deposited Films

A combinatorial study on semiconducting ZnSnN2, in which the lowest carrier density yet reported for as-deposited films is achieved, wurtzite crystal structure is confirmed, and optical bandgap is established at 1.0 eV.

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