Solvent-Free Synthesized Monolithic Ultraporous Aluminas for Highly Efficient Removal of Remazol Brilliant Blue R: Equilibrium, Kinetic, and Thermodynamic Studies

In this study, ultraporous aluminas (UPA) were synthesized as new effective adsorbents for Remazol Brilliant Blue R (RBBR) removal from aqueous solutions. The UPA monoliths were grown via facile oxidation process, followed by isochronous annealing treatment in air at different temperatures, through which γ, θ, and α phase polycrystalline fibrous grains of UPA can be accordingly obtained. The experimental factors that affect the material adsorption performances including initial pH, contact time, and temperature were comprehensively studied by batch experiments. The RBBR adsorption isotherms of UPA(γ) and UPA(θ) powders were found almost identical, while UPA(α) powders showed low effectiveness. To obtain the desirable mechanical stability of the UPA monolith with considerable RBBR adsorption capacity, UPA(θ) powders were further studied. The UPA(θ) powders exhibited maximum RBBR adsorption at pH 2 due to the positively charged surface under acidic conditions. Compared with the Lagergren pseudo-first-order model, the pseudo-second-order model was found to explain the adsorption kinetics better. Despite the film diffusion dominating the adsorption process, the contributions of the intraparticle diffusion and chemical reactions were also found significant. The adsorption equilibrium data at different temperatures were fitted by the Langmuir, Freundlich, Temkin, and Dubinin–Radushkevich (D–R) isotherm models. The Langmuir model was found the most effective in the description of equilibrium data, and the maximum RBBR adsorption capacity retained by UPA(θ) powders was 122.55 mg·g−1 at 295 K. Thermodynamic parameters (ΔG0, ΔH0, and ΔS0) indicated the adsorption process was spontaneous and exothermic in nature.

Influence of radiation on the electrophysical parameters of GaAsP LEDs

The features of the current-voltage characteristics of LEDs obtained on the basis of GaP-GaAsP solid solutions are considered. The results of studies of the effect of electron irradiation (E = 2 MeV, F = 3 · 1014 ÷ 2.6 · 1016 cm-2) on the main electrophysical parameters of GaAs1-xPx diodes (x = 0.85 – yellow, x = 0.45 – orange) are given. The increase of differential resistance, the series resistance of the base, and barrier potential are revealed. The processes of recovery of the investigated quantities during isochronous annealing are analyzed, the mechanisms of degradation-recovery phenomena are discussed.

Формирование кремниевых нанокластеров при диспропорционировании моноокиси кремния

In this work, the processes of disproportionation of solid-phase silicon monoxide, accompanied by the formation of nanocrystalline silicon precipitates in the medium of amorphous SiOx suboxide (initial composition SiO0.9), have been studied. Based on the data of X-ray diffraction analysis and transmission electron microscopy, the dynamics of changes in the amount, concentration and size of phase precipitates of silicon with an increase in the temperature of isochronous annealing from 800 °C to 1200 °C is traced. It was found that with a monotonic increase in the total mass of the precipitated silicon, the number of its crystallization centers per unit volume nonmonotonically depends on temperature. The activation energy of diffusion of silicon atoms in the SiOx matrix was determined to be Ea1= 1.64 eV, and the activation energy of their transfer from the formed precipitates to the growth medium of SiOx was Ea2 = 2.38 eV. Anisotropic deformation of silicon crystallites precipitated during the disproportionation of SiO has been revealed for the first time. This phenomenon is associated with the difference in the specific volumes of the separated phases and the anisotropy of the growth rate of silicon precipitates formed in a solid amorphous medium.

Низкотемпературный отжиг слаболегированных слоев n-4H-SiC после облучения быстрыми электронами

The effect of low-temperature (up to 600°C) isothermal and isochronous annealing on the electrical characteristics of irradiated n -4 H -SiC JBS Schottky diodes is studied. Irradiation is performed with 0.9-MeV electrons at a dose of 1 × 10^16 cm^–2. It is shown that the forward current–voltage ( I – V ) and capacitance–voltage ( C – V ) characteristics of the irradiated diodes are mainly restored at annealing temperatures of up to 300°C. As the annealing temperature is raised to 500°C, nearly 90% of the defects introduced by irradiation with fast electrons are annealed out. The possible recommended mode of stabilizing annealing to be used in radiation-defect engineering (RDE) is 500°C, 30 min.