scholarly journals Combinatorial insights into doping control and transport properties of zinc tin nitride

2015 ◽  
Vol 3 (42) ◽  
pp. 11017-11028 ◽  
Author(s):  
Angela N. Fioretti ◽  
Andriy Zakutayev ◽  
Helio Moutinho ◽  
Celeste Melamed ◽  
John D. Perkins ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Transport Properties ◽  
Carrier Density ◽  
Doping Control ◽  
Optical Bandgap ◽  
Wurtzite Crystal Structure ◽  
Zinc Tin Nitride ◽  
Tin Nitride ◽  
Deposited Films

A combinatorial study on semiconducting ZnSnN2, in which the lowest carrier density yet reported for as-deposited films is achieved, wurtzite crystal structure is confirmed, and optical bandgap is established at 1.0 eV.

scholarly journals Fabrication, micro-structure characteristics and transport properties of co-evaporated thin films of Bi2Te3 on AlN coated stainless steel foils

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Aziz Ahmed ◽  
Seungwoo Han
Keyword(s):  
Thin Film ◽  
Crystal Structure ◽  
Thin Films ◽  
Stainless Steel ◽  
Substrate Temperature ◽  
Transport Properties ◽  
Structural Defects ◽  
Film Composition ◽  
High Substrate ◽  
Foil Substrate

AbstractN-type bismuth telluride (Bi2Te3) thin films were prepared on an aluminum nitride (AlN)-coated stainless steel foil substrate to obtain optimal thermoelectric performance. The thermal co-evaporation method was adopted so that we could vary the thin film composition, enabling us to investigate the relationship between the film composition, microstructure, crystal preferred orientation and thermoelectric properties. The influence of the substrate temperature was also investigated by synthesizing two sets of thin film samples; in one set the substrate was kept at room temperature (RT) while in the other set the substrate was maintained at a high temperature, of 300 °C, during deposition. The samples deposited at RT were amorphous in the as-deposited state and therefore were annealed at 280 °C to promote crystallization and phase development. The electrical resistivity and Seebeck coefficient were measured and the results were interpreted. Both the transport properties and crystal structure were observed to be strongly affected by non-stoichiometry and the choice of substrate temperature. We observed columnar microstructures with hexagonal grains and a multi-oriented crystal structure for the thin films deposited at high substrate temperatures, whereas highly (00 l) textured thin films with columns consisting of in-plane layers were fabricated from the stoichiometric annealed thin film samples originally synthesized at RT. Special emphasis was placed on examining the nature of tellurium (Te) atom based structural defects and their influence on thin film properties. We report maximum power factor (PF) of 1.35 mW/m K2 for near-stoichiometric film deposited at high substrate temperature, which was the highest among all studied cases.

scholarly journals Study of anisotropic thermal conductivity in textured thermoelectric alloys by Raman spectroscopy

RSC Advances ◽  
2021 ◽  
Vol 11 (39) ◽  
pp. 24456-24465
Author(s):  
Rapaka S. C. Bose ◽  
K. Ramesh
Keyword(s):  
Crystal Structure ◽  
Thermal Conductivity ◽  
Raman Spectroscopy ◽  
Transport Properties ◽  
Thermal Transport ◽  
Layered Crystal ◽  
Layered Crystal Structure ◽  
Thermal Transport Properties ◽  
Anisotropic Thermal Conductivity ◽  
P Type

Polycrystalline p-type Sb1.5Bi0.5Te3 (SBT) and n-type Bi2Te2.7Se0.3 (BTS) compounds possessing layered crystal structure show anisotropic electronic and thermal transport properties.

Can antimonide-based nanowires form wurtzite crystal structure?

Nanoscale ◽  
2016 ◽  
Vol 8 (5) ◽  
pp. 2778-2786 ◽  
Author(s):  
Sepideh Gorji Ghalamestani ◽  
Sebastian Lehmann ◽  
Kimberly A. Dick
Keyword(s):  
Crystal Structure ◽  
Wurtzite Crystal Structure

Synthesis, crystal structure and thermoelectric properties of a new metal telluride Ba3Ag3InTe6

2017 ◽  
Vol 4 (9) ◽  
pp. 1458-1464 ◽  
Author(s):  
M.-Y. Lee ◽  
D. I. Bilc ◽  
E. Symeou ◽  
Y.-C. Lin ◽  
I.-C. Liang ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Transport Properties ◽  
Valence Band ◽  
Thermoelectric Properties ◽  
Type Semiconductor ◽  
P Type

A new p-type semiconductor Ba3Ag3InTe6 with transport properties dominated by the layer [Ag3Te4]5− distributed in the valence band.

Rationally optimized carrier effective mass and carrier density lead to high average ZT value in n-type PbSe

2021 ◽  
Author(s):  
Yu Xiao ◽  
Wei Liu ◽  
Yang Zhang ◽  
Dongyang Wang ◽  
Haonan Shi ◽  
...  
Keyword(s):  
Transport Properties ◽  
Effective Mass ◽  
Electrical Transport ◽  
Carrier Density ◽  
Electrical Transport Properties ◽  
Carrier Effective Mass ◽  
Thermoelectric Parameters

Among these intricately coupled thermoelectric parameters, the carrier effective mass (m*) and carrier density (n) are two key parameters to determine the electrical transport properties. To enhance the broad-temperature thermoelectric...

Synthesis, crystal structure, and transport properties of Cu2SnTe3

2020 ◽  
Vol 290 ◽  
pp. 121566
Author(s):  
Noha Alzahrani ◽  
Dean Hobbis ◽  
George S. Nolas
Keyword(s):  
Crystal Structure ◽  
Transport Properties

Effect of Solution pH and Post-annealing temperatures on the Optical Bandgap of the Copper Oxide Thin Films Grown by modified SILAR Method

MRS Advances ◽  
2019 ◽  
Vol 4 (16) ◽  
pp. 937-944
Author(s):  
S.F.U. Farhad ◽  
S. Majumder ◽  
Md. A. Hossain ◽  
N.I. Tanvir ◽  
R. Akter ◽  
...  
Keyword(s):  
Thin Films ◽  
Cupric Oxide ◽  
Optical Bandgap ◽  
Soda Lime Glass ◽  
Solution Ph ◽  
Sem Images ◽  
Silar Method ◽  
Annealing Temperatures ◽  
Post Annealing ◽  
Deposited Films

AbstractCuprous oxide (Cu2O) thin films have been grown on both soda lime glass (SLG) microscope slides and Fluorine-doped Tin Oxide (FTO) substrates by a modified SILAR technique. The pH level of the bath solution was systematically varied in the range of 4.50 – 7.95 to elucidate their effect on the physical properties of the deposited product. The prepared films showed compact surface morphology composed of spherical grains evident from their SEM images. The XRD measurement showed that the as-deposited films were single phase Cu2O with (111) preferred orientation and this texturing was found to be increasing with increasing pH and annealing temperature. The annealed Cu2O films were found to be stable up to 200 °C and completely converted to cupric oxide (CuO) phases when the temperature reached to 350 °C. The estimated optical bandgaps of the as-grown samples were found in the range of 2.28 – 2.48 eV using UV-Vis-NIR transmission data and showing a bandgap narrowing trend with the decreasing level of solution pH. The effect of post-annealing temperatures (75-350 0C) on the as-deposited films was also studied and found to be crucial to control the optical bandgap (1.44 – 2.13) eV and electrical properties of the films. The sheet resistance of the as-deposited samples was found to be decreasing from 4120 MΩ/square to 800 MΩ/square while grown with increasing acetic acid content in the precursor solutions and decreasing up to 2.66 MΩ/square while annealing up to 250 °C in the air.

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