Deep defect level engineering: a strategy of optimizing the carrier concentration for high thermoelectric performance

2018 ◽  
Vol 11 (4) ◽  
pp. 933-940 ◽  
Author(s):  
Qian Zhang ◽  
Qichen Song ◽  
Xinyu Wang ◽  
Jingying Sun ◽  
Qing Zhu ◽  
...  
Keyword(s):  
Carrier Concentration ◽  
Thermoelectric Properties ◽  
Thermoelectric Performance ◽  
Defect Level ◽  
Deep Defect

Thermoelectric properties are heavily dependent on the carrier concentration, and therefore the optimization of carrier concentration plays a central role in achieving high thermoelectric performance.

scholarly journals Tuning the thermoelectric properties of A-site deficient SrTiO3 ceramics by vacancies and carrier concentration

2016 ◽  
Vol 18 (38) ◽  
pp. 26475-26486 ◽  
Author(s):  
Deepanshu Srivastava ◽  
Colin Norman ◽  
Feridoon Azough ◽  
Marion C. Schäfer ◽  
Emmanuel Guilmeau ◽  
...  
Keyword(s):  
Carrier Concentration ◽  
Thermoelectric Properties ◽  
Charge Carriers ◽  
Thermoelectric Performance ◽  
A Site ◽  
Srtio3 Ceramics

The work demonstrates the relative contributions to enhanced thermoelectric performance in perovskites from (i) vacancies and (ii) charge carriers.

scholarly journals Improving the Thermoelectric Properties of the Half-Heusler Compound VCoSb by Vanadium Vacancy

Materials ◽  
2019 ◽  
Vol 12 (10) ◽  
pp. 1637 ◽  
Author(s):  
Lihong Huang ◽  
Junchen Wang ◽  
Xiaobo Mo ◽  
Xiaobo Lei ◽  
Sude Ma ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Seebeck Coefficient ◽  
Carrier Concentration ◽  
Thermoelectric Properties ◽  
Power Factor ◽  
Secondary Phase ◽  
Thermoelectric Performance ◽  
Heusler Compound

The effects of V vacancy on the thermoelectric performance of the half-Heusler compound VCoSb have been investigated in this study. A certain amount of CoSb secondary phase is generated in the VCoSb matrix when the content of V vacancy is more than 0.1 at%. According to the results, a ZT value of 0.6, together with a power factor of 29 μW cm−1 K−2 at 873 K, were achieved for the nonstoichiometric sample V0.9CoSb. This proved that moderate V vacancy could improve the thermoelectric (TE) properties of VCoSb. The noticeable improvements are mainly owing to the incremental Seebeck coefficient, which may benefit from the optimized carrier concentration. However, too much V vacancy will result in more CoSb impurity and deteriorate the TE performances of VCoSb owing to the increased thermal conductivity.

scholarly journals Enhanced thermoelectric performance through synergy of resonance levels and valence band convergence via Q/In (Q = Mg, Ag, Bi) co-doping

2018 ◽  
Vol 6 (6) ◽  
pp. 2507-2516 ◽  
Author(s):  
Li Juan Zhang ◽  
Peng Qin ◽  
Chao Han ◽  
Jian Li Wang ◽  
Zhen Hua Ge ◽  
...  
Keyword(s):  
Carrier Concentration ◽  
Valence Band ◽  
Thermoelectric Properties ◽  
Thermoelectric Performance ◽  
Chemical Doping ◽  
Co Doping ◽  
Synergetic Effects

Remarkably improved thermoelectric properties are achieved through the synergetic effects of the resonance levels, the valence band convergence, and the carrier concentration optimization by chemical doping.

High Thermoelectric Performance of p-Type Bi0.5Sb1.5Te3+xTe Crystals Prepared via Gradient Freezing

2012 ◽  
Vol 621 ◽  
pp. 167-171
Author(s):  
Tao Hua Liang ◽  
Shi Qing Yang ◽  
Zhi Chen ◽  
Qing Xue Yang
Keyword(s):  
Thermal Conductivity ◽  
Seebeck Coefficient ◽  
Carrier Concentration ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Thermoelectric Performance ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
P Type

p-type Bi0.5Sb1.5Te3+xTe thermoelectric crystals with various percentages of Te (x = 0.00 wt.%–3.00 wt.%) excess were prepared by the gradient freeze method. By doping with different Te contents, anti-site defects, Te vacancies and hole carrier concentrations were controlled. The Seebeck coefficient, resistivity, thermal conductivity, carrier concentration, and mobility were measured. The relationships between the Te content and thermoelectric properties were investigated in detail. The results suggested that the thermoelectric figure of merit ZT of the Bi0.5Sb1.5Te3+0.09wt.% crystals was 1.36 near room temperature, the optimum carrier concentration was 1.25 × 1019 cm-3, and the mobility was 1480 cm2 V-1 S-1, respectively.

Effects of Nb doping on thermoelectric properties of Zn4Sb3 at high temperatures

2009 ◽  
Vol 24 (2) ◽  
pp. 430-435 ◽  
Author(s):  
D. Li ◽  
H.H. Hng ◽  
J. Ma ◽  
X.Y. Qin
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
High Temperatures ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Thermoelectric Performance ◽  
Temperature Range ◽  
A Value ◽  
Nb Doping ◽  
Thermal Conductivities

The thermoelectric properties of Nb-doped Zn4Sb3 compounds, (Zn1–xNbx)4Sb3 (x = 0, 0.005, and 0.01), were investigated at temperatures ranging from 300 to 685 K. The results showed that by substituting Zn with Nb, the thermal conductivities of all the Nb-doped compounds were lower than that of the pristine β-Zn4Sb3. Among the compounds studied, the lightly substituted (Zn0.995Nb0.005)4Sb3 compound exhibited the best thermoelectric performance due to the improvement in both its electrical resistivity and thermal conductivity. Its figure of merit, ZT, was greater than the undoped Zn4Sb3 compound for the temperature range investigated. In particular, the ZT of (Zn0.995Nb0.005)4Sb3 reached a value of 1.1 at 680 K, which was 69% greater than that of the undoped Zn4Sb3 obtained in this study.

scholarly journals Enhancement of Thermoelectric Performance in CuSbSe 2 Nanoplate‐Based Pellets by Texture Engineering and Carrier Concentration Optimization

Small ◽  
2018 ◽  
Vol 14 (50) ◽  
pp. 1803092 ◽  
Author(s):  
Yubo Luo ◽  
Chengfeng Du ◽  
Qinghua Liang ◽  
Yun Zheng ◽  
Beibei Zhu ◽  
...  
Keyword(s):  
Carrier Concentration ◽  
Thermoelectric Performance

scholarly journals Enhancing the thermoelectric performance of Cu3SnS4-based solid solutions through coordination of the Seebeck coefficient and carrier concentration

2017 ◽  
Vol 5 (35) ◽  
pp. 18808-18815 ◽  
Author(s):  
Yuanbo Yang ◽  
Pengzhan Ying ◽  
Jinzhi Wang ◽  
Xianglian Liu ◽  
Zhengliang Du ◽  
...  
Keyword(s):  
Seebeck Coefficient ◽  
Carrier Concentration ◽  
Solid Solutions ◽  
Thermoelectric Performance

Through coordination of the Seebeck coefficient and carrier concentration in Cu3SnS4, TE performance improves significantly with the ZT value of 0.75 at 790 K.

Significantly optimized thermoelectric properties in high-symmetry cubic Cu7PSe6 compounds via entropy engineering

2018 ◽  
Vol 6 (15) ◽  
pp. 6493-6502 ◽  
Author(s):  
Rui Chen ◽  
Pengfei Qiu ◽  
Binbin Jiang ◽  
Ping Hu ◽  
Yiming Zhang ◽  
...  
Keyword(s):  
Thermoelectric Properties ◽  
Configurational Entropy ◽  
Thermoelectric Performance ◽  
High Symmetry ◽  
Type Compound

Via introducing Te into the argyrodite-type compound Cu7PSe6, the configurational entropy is increased yielding the significantly enhanced thermoelectric performance.

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