A theoretical model of the thermoelectric properties of SnSxSe1−x and how to further enhance its thermoelectric performance

2019 ◽  
Vol 126 (22) ◽  
pp. 225105 ◽  
Author(s):  
Raveena Gupta ◽  
Baljinder Kaur ◽  
Jesús Carrete ◽  
Chandan Bera
Keyword(s):  
Theoretical Model ◽  
Thermoelectric Properties ◽  
Thermoelectric Performance

Effects of Nb doping on thermoelectric properties of Zn4Sb3 at high temperatures

2009 ◽  
Vol 24 (2) ◽  
pp. 430-435 ◽  
Author(s):  
D. Li ◽  
H.H. Hng ◽  
J. Ma ◽  
X.Y. Qin
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
High Temperatures ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Thermoelectric Performance ◽  
Temperature Range ◽  
A Value ◽  
Nb Doping ◽  
Thermal Conductivities

The thermoelectric properties of Nb-doped Zn4Sb3 compounds, (Zn1–xNbx)4Sb3 (x = 0, 0.005, and 0.01), were investigated at temperatures ranging from 300 to 685 K. The results showed that by substituting Zn with Nb, the thermal conductivities of all the Nb-doped compounds were lower than that of the pristine β-Zn4Sb3. Among the compounds studied, the lightly substituted (Zn0.995Nb0.005)4Sb3 compound exhibited the best thermoelectric performance due to the improvement in both its electrical resistivity and thermal conductivity. Its figure of merit, ZT, was greater than the undoped Zn4Sb3 compound for the temperature range investigated. In particular, the ZT of (Zn0.995Nb0.005)4Sb3 reached a value of 1.1 at 680 K, which was 69% greater than that of the undoped Zn4Sb3 obtained in this study.

Significantly optimized thermoelectric properties in high-symmetry cubic Cu7PSe6 compounds via entropy engineering

2018 ◽  
Vol 6 (15) ◽  
pp. 6493-6502 ◽  
Author(s):  
Rui Chen ◽  
Pengfei Qiu ◽  
Binbin Jiang ◽  
Ping Hu ◽  
Yiming Zhang ◽  
...  
Keyword(s):  
Thermoelectric Properties ◽  
Configurational Entropy ◽  
Thermoelectric Performance ◽  
High Symmetry ◽  
Type Compound

Via introducing Te into the argyrodite-type compound Cu7PSe6, the configurational entropy is increased yielding the significantly enhanced thermoelectric performance.

Ultra-low thermal conductivity and high thermoelectric performance realized in a Cu3SbSe4 based system

2021 ◽  
Vol 5 (1) ◽  
pp. 324-332
Author(s):  
J. M. Li ◽  
H. W. Ming ◽  
B. L. Zhang ◽  
C. J. Song ◽  
L. Wang ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Thermoelectric Properties ◽  
Thermoelectric Performance ◽  
Low Thermal Conductivity ◽  
Sn Doping ◽  
Temperature Range ◽  
System P

Cu3SbSe4-Based materials were fabricated through Sn-doping and AgSb0.98Ge0.02Se2 incorporation and their thermoelectric properties were investigated in the temperature range from 300 K to 675 K.

scholarly journals Benchmark characterization of the thermoelectric properties of individual single-crystalline CdS nanowires by a H-type sensor

RSC Advances ◽  
2017 ◽  
Vol 7 (41) ◽  
pp. 25298-25304 ◽  
Author(s):  
Haidong Wang ◽  
Dingshan Zheng ◽  
Xing Zhang ◽  
Hiroshi Takamatsu ◽  
Weida Hu
Keyword(s):  
Thermoelectric Properties ◽  
Thermoelectric Performance ◽  
Single Crystalline ◽  
Cds Nanowires ◽  
First Time

A precision H-type sensor method has been developed to measure the thermoelectric performance of individual single-crystalline CdS nanowires for the first time.

scholarly journals High thermoelectric performance of rapidly microwave-synthesized Sn1−δS

2020 ◽  
Vol 1 (4) ◽  
pp. 845-853
Author(s):  
Jesús Prado-Gonjal ◽  
Javier Gainza ◽  
Isabel Aguayo ◽  
Óscar Juan Durá ◽  
Sara Rodríguez-Pérez ◽  
...  
Keyword(s):  
Thermoelectric Properties ◽  
Thermoelectric Performance ◽  
Hydrothermal Route ◽  
Microwave Hydrothermal

Promising thermoelectric properties were found for polycrystalline Sn1−δS synthesized by a microwave-hydrothermal route (ZT = 0.76 at 523 K).

scholarly journals The effect of post-deposition annealing conditions on structural and thermoelectric properties of sputtered copper oxide films

RSC Advances ◽  
2020 ◽  
Vol 10 (49) ◽  
pp. 29394-29401
Author(s):  
Chandrasekaran Abinaya ◽  
Kevin Bethke ◽  
Virgil Andrei ◽  
Jonas Baumann ◽  
Beatrix Pollakowski-Herrmann ◽  
...  
Keyword(s):  
Thin Films ◽  
Copper Oxide ◽  
Thermoelectric Properties ◽  
Oxide Films ◽  
Thermoelectric Performance ◽  
Annealing Atmosphere ◽  
Oxide Thin Films ◽  
Post Deposition Annealing ◽  
Annealing Conditions ◽  
Post Deposition

This study reveals the interplay between the composition and thermoelectric performance of mixed copper oxide thin films, which can be finely adjusted by varying the annealing atmosphere.

Exceeding the filling fraction limit in CoSb3 skutterudite: multi-role chemistry of praseodymium leading to promising thermoelectric performance

2014 ◽  
Vol 2 (23) ◽  
pp. 8933-8940 ◽  
Author(s):  
J. W. Graff ◽  
X. Zeng ◽  
A. M. Dehkordi ◽  
J. He ◽  
T. M. Tritt
Keyword(s):  
Thermoelectric Properties ◽  
State Of The Art ◽  
Thermoelectric Performance ◽  
Filling Fraction ◽  
Filled Skutterudite

Purposefully exceeding the FFL of the previously uninvestigated Pr-filled Co4Sb12 system resulting in state-of-the-art thermoelectric properties for the single-filled skutterudite.

Band engineering via biaxial strain for enhanced thermoelectric performance in stannite-type Cu2ZnSnSe4

RSC Advances ◽  
2015 ◽  
Vol 5 (32) ◽  
pp. 24908-24914 ◽  
Author(s):  
Daifeng Zou ◽  
Guozheng Nie ◽  
Yu Li ◽  
Ying Xu ◽  
Jianguo Lin ◽  
...  
Keyword(s):  
Fermi Level ◽  
Thermoelectric Properties ◽  
Thermoelectric Performance ◽  
Biaxial Strain ◽  
Band Engineering ◽  
Valence Bands

The enhancement of the thermoelectric properties of stannite-type Cu2ZnSnSe4 under biaxial strain can be ascribed to band convergence of the valence bands near the Fermi level.

scholarly journals High thermoelectric performance of the distorted bismuth(110) layer

2016 ◽  
Vol 18 (26) ◽  
pp. 17373-17379 ◽  
Author(s):  
L. Cheng ◽  
H. J. Liu ◽  
J. Zhang ◽  
J. Wei ◽  
J. H. Liang ◽  
...  
Keyword(s):  
Transport Equation ◽  
Thermoelectric Properties ◽  
First Principles ◽  
Boltzmann Transport Equation ◽  
Thermoelectric Performance ◽  
First Principles Calculations ◽  
Boltzmann Transport

The thermoelectric properties of the distorted bismuth(110) layer are investigated using first-principles calculations combined with the Boltzmann transport equation for both electrons and phonons.

Enhanced thermoelectric performance of BiSbTe-based composites incorporated with amorphous Si3N4 nanoparticles

RSC Advances ◽  
2015 ◽  
Vol 5 (43) ◽  
pp. 34251-34256 ◽  
Author(s):  
Y. C. Dou ◽  
X. Y. Qin ◽  
D. Li ◽  
Y. Y. Li ◽  
H. X. Xin ◽  
...  
Keyword(s):  
Thermoelectric Properties ◽  
Thermoelectric Performance ◽  
Temperature Range ◽  
Amorphous Si ◽  
Amorphous Si3n4

Thermoelectric properties of BiSbTe-based composites dispersed with a small amount (<1 vol%) of amorphous Si3N4 (a-Si3N4) nanoparticles (∼25 nm) were investigated in the temperature range from 303 K to 483 K.

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