scholarly journals Enhancing the thermoelectric performance of Cu3SnS4-based solid solutions through coordination of the Seebeck coefficient and carrier concentration

2017 ◽  
Vol 5 (35) ◽  
pp. 18808-18815 ◽  
Author(s):  
Yuanbo Yang ◽  
Pengzhan Ying ◽  
Jinzhi Wang ◽  
Xianglian Liu ◽  
Zhengliang Du ◽  
...  
Keyword(s):  
Seebeck Coefficient ◽  
Carrier Concentration ◽  
Solid Solutions ◽  
Thermoelectric Performance

Through coordination of the Seebeck coefficient and carrier concentration in Cu3SnS4, TE performance improves significantly with the ZT value of 0.75 at 790 K.

scholarly journals Analyzing transport properties of p-type Mg2Si–Mg2Sn solid solutions: optimization of thermoelectric performance and insight into the electronic band structure

2019 ◽  
Vol 7 (3) ◽  
pp. 1045-1054 ◽  
Author(s):  
Hasbuna Kamila ◽  
Prashant Sahu ◽  
Aryan Sankhla ◽  
Mohammad Yasseri ◽  
Hoang-Ngan Pham ◽  
...  
Keyword(s):  
Band Structure ◽  
Transport Properties ◽  
Carrier Concentration ◽  
Solid Solutions ◽  
Figure Of Merit ◽  
Electronic Band Structure ◽  
Thermoelectric Performance ◽  
Electronic Band ◽  
P Type ◽  
Insight Into

Figure of merit zT mapping of p-Mg2Si1−xSnx with respect to carrier concentration.

scholarly journals Improving the Thermoelectric Properties of the Half-Heusler Compound VCoSb by Vanadium Vacancy

Materials ◽  
2019 ◽  
Vol 12 (10) ◽  
pp. 1637 ◽  
Author(s):  
Lihong Huang ◽  
Junchen Wang ◽  
Xiaobo Mo ◽  
Xiaobo Lei ◽  
Sude Ma ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Seebeck Coefficient ◽  
Carrier Concentration ◽  
Thermoelectric Properties ◽  
Power Factor ◽  
Secondary Phase ◽  
Thermoelectric Performance ◽  
Heusler Compound

The effects of V vacancy on the thermoelectric performance of the half-Heusler compound VCoSb have been investigated in this study. A certain amount of CoSb secondary phase is generated in the VCoSb matrix when the content of V vacancy is more than 0.1 at%. According to the results, a ZT value of 0.6, together with a power factor of 29 μW cm−1 K−2 at 873 K, were achieved for the nonstoichiometric sample V0.9CoSb. This proved that moderate V vacancy could improve the thermoelectric (TE) properties of VCoSb. The noticeable improvements are mainly owing to the incremental Seebeck coefficient, which may benefit from the optimized carrier concentration. However, too much V vacancy will result in more CoSb impurity and deteriorate the TE performances of VCoSb owing to the increased thermal conductivity.

High Thermoelectric Performance of p-Type Bi0.5Sb1.5Te3+xTe Crystals Prepared via Gradient Freezing

2012 ◽  
Vol 621 ◽  
pp. 167-171
Author(s):  
Tao Hua Liang ◽  
Shi Qing Yang ◽  
Zhi Chen ◽  
Qing Xue Yang
Keyword(s):  
Thermal Conductivity ◽  
Seebeck Coefficient ◽  
Carrier Concentration ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Thermoelectric Performance ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
P Type

p-type Bi0.5Sb1.5Te3+xTe thermoelectric crystals with various percentages of Te (x = 0.00 wt.%–3.00 wt.%) excess were prepared by the gradient freeze method. By doping with different Te contents, anti-site defects, Te vacancies and hole carrier concentrations were controlled. The Seebeck coefficient, resistivity, thermal conductivity, carrier concentration, and mobility were measured. The relationships between the Te content and thermoelectric properties were investigated in detail. The results suggested that the thermoelectric figure of merit ZT of the Bi0.5Sb1.5Te3+0.09wt.% crystals was 1.36 near room temperature, the optimum carrier concentration was 1.25 × 1019 cm-3, and the mobility was 1480 cm2 V-1 S-1, respectively.

Chemical Composition Engineering Leading to the Significant Improvement in the Thermoelectric Performance of AgBiSe2-Based n-Type Solid Solutions

2021 ◽  
Vol 4 (3) ◽  
pp. 2899-2907
Author(s):  
Qingrui Xia ◽  
Pengzhan Ying ◽  
Zhongkang Han ◽  
Xie Li ◽  
Liangliang Xu ◽  
...  
Keyword(s):  
Chemical Composition ◽  
Solid Solutions ◽  
Thermoelectric Performance

scholarly journals Enhancement of Thermoelectric Performance in CuSbSe 2 Nanoplate‐Based Pellets by Texture Engineering and Carrier Concentration Optimization

Small ◽  
2018 ◽  
Vol 14 (50) ◽  
pp. 1803092 ◽  
Author(s):  
Yubo Luo ◽  
Chengfeng Du ◽  
Qinghua Liang ◽  
Yun Zheng ◽  
Beibei Zhu ◽  
...  
Keyword(s):  
Carrier Concentration ◽  
Thermoelectric Performance

Oxygen adsorption and its influence on the thermoelectric performance of polycrystalline SnSe

2019 ◽  
Vol 7 (34) ◽  
pp. 10507-10513 ◽  
Author(s):  
Mengmeng Zhang ◽  
Dongyang Wang ◽  
Cheng Chang ◽  
Tao Lin ◽  
Kedong Wang ◽  
...  
Keyword(s):  
Carrier Concentration ◽  
Oxygen Adsorption ◽  
Thermoelectric Performance

Oxygen is adsorbed when SnSe is exposed to air and it acts as a hole-like acceptor. The thermoelectric performance of n-type polycrystalline SnSe can be promoted through optimizing carrier concentration via preventing oxygen adsorption.

Study on Phonon Drag Effect and Phonon Transport in Thin Si-on-Insulator Layers

2015 ◽  
Vol 1117 ◽  
pp. 86-89 ◽  
Author(s):  
Hiroya Ikeda ◽  
Takuro Oda ◽  
Yuhei Suzuki ◽  
Yoshinari Kamakura ◽  
Faiz Salleh
Keyword(s):  
Seebeck Coefficient ◽  
Carrier Concentration ◽  
Phonon Scattering ◽  
Phonon Transport ◽  
Infrared Photodetector ◽  
Phonon Drag ◽  
Drag Effect ◽  
Phonon Modes ◽  
Highly Sensitive ◽  
Insulator Layers

The Seebeck coefficient of P-doped ultrathin Si-on-insulator (SOI) layers is investigated for the application to a highly-sensitive thermopile infrared photodetector. It is found that the Seebeck coefficient originating from the phonon drag is significant in the lightly doped region and depends on the carrier concentration with increasing carrier concentration above ~5×1018 cm-3. On the basis of Seebeck coefficient calculations considering both electron and phonon distribution, the phonon-drag part of SOI Seebeck coefficient is mainly governed by the phonon transport, in which the phonon-phonon scattering process is dominant rather than the crystal boundary scattering even in the SOI layer with a thickness of 10 nm. This fact suggests that the phonon-drag Seebeck coefficient is influenced by the phonon modes different from the thermal conductivity.

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