scholarly journals Enhanced thermoelectric performance through synergy of resonance levels and valence band convergence via Q/In (Q = Mg, Ag, Bi) co-doping

2018 ◽  
Vol 6 (6) ◽  
pp. 2507-2516 ◽  
Author(s):  
Li Juan Zhang ◽  
Peng Qin ◽  
Chao Han ◽  
Jian Li Wang ◽  
Zhen Hua Ge ◽  
...  
Keyword(s):  
Carrier Concentration ◽  
Valence Band ◽  
Thermoelectric Properties ◽  
Thermoelectric Performance ◽  
Chemical Doping ◽  
Co Doping ◽  
Synergetic Effects

Remarkably improved thermoelectric properties are achieved through the synergetic effects of the resonance levels, the valence band convergence, and the carrier concentration optimization by chemical doping.

scholarly journals Outstanding thermoelectric properties of solvothermal-synthesized Sn1−3xInxAg2xTe micro-crystals through defect engineering and band tuning

2020 ◽  
Vol 8 (7) ◽  
pp. 3978-3987 ◽  
Author(s):  
Raza Moshwan ◽  
Wei-Di Liu ◽  
Xiao-Lei Shi ◽  
Qiang Sun ◽  
Han Gao ◽  
...  
Keyword(s):  
Synergistic Effect ◽  
Transport Properties ◽  
Valence Band ◽  
Thermoelectric Properties ◽  
Electrical Transport ◽  
Energy Levels ◽  
Resonance Energy ◽  
Defect Engineering ◽  
Electrical Transport Properties ◽  
Co Doping

In eco-friendly SnTe thermoelectrics, In and Ag co-doping induces the synergistic effect of resonance energy levels and valence band convergence to enhance its electrical transport properties, while defects ameliorates its thermal transport.

scholarly journals Tuning the thermoelectric properties of A-site deficient SrTiO3 ceramics by vacancies and carrier concentration

2016 ◽  
Vol 18 (38) ◽  
pp. 26475-26486 ◽  
Author(s):  
Deepanshu Srivastava ◽  
Colin Norman ◽  
Feridoon Azough ◽  
Marion C. Schäfer ◽  
Emmanuel Guilmeau ◽  
...  
Keyword(s):  
Carrier Concentration ◽  
Thermoelectric Properties ◽  
Charge Carriers ◽  
Thermoelectric Performance ◽  
A Site ◽  
Srtio3 Ceramics

The work demonstrates the relative contributions to enhanced thermoelectric performance in perovskites from (i) vacancies and (ii) charge carriers.

Enhancing the thermoelectric performance of Cu1.8S by Sb/Sn co-doping and incorporating multiscale defects to scatter heat-carrying phonons

2019 ◽  
Vol 7 (14) ◽  
pp. 4026-4031 ◽  
Author(s):  
Huaichao Tang ◽  
Hua-Lu Zhuang ◽  
Bowen Cai ◽  
Asfandiyar Asfandiyar ◽  
Jinfeng Dong ◽  
...  
Keyword(s):  
Carrier Concentration ◽  
Thermoelectric Performance ◽  
Co Doping

(Sb, Sn) co-doping optimizes the carrier concentration of Cu1.8S and constructs multiscale defects, leading to ZTmax of 1.2 at 773 K.

scholarly journals Improving the Thermoelectric Properties of the Half-Heusler Compound VCoSb by Vanadium Vacancy

Materials ◽  
2019 ◽  
Vol 12 (10) ◽  
pp. 1637 ◽  
Author(s):  
Lihong Huang ◽  
Junchen Wang ◽  
Xiaobo Mo ◽  
Xiaobo Lei ◽  
Sude Ma ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Seebeck Coefficient ◽  
Carrier Concentration ◽  
Thermoelectric Properties ◽  
Power Factor ◽  
Secondary Phase ◽  
Thermoelectric Performance ◽  
Heusler Compound

The effects of V vacancy on the thermoelectric performance of the half-Heusler compound VCoSb have been investigated in this study. A certain amount of CoSb secondary phase is generated in the VCoSb matrix when the content of V vacancy is more than 0.1 at%. According to the results, a ZT value of 0.6, together with a power factor of 29 μW cm−1 K−2 at 873 K, were achieved for the nonstoichiometric sample V0.9CoSb. This proved that moderate V vacancy could improve the thermoelectric (TE) properties of VCoSb. The noticeable improvements are mainly owing to the incremental Seebeck coefficient, which may benefit from the optimized carrier concentration. However, too much V vacancy will result in more CoSb impurity and deteriorate the TE performances of VCoSb owing to the increased thermal conductivity.

scholarly journals Thermoelectric Properties of Bi2Te3: CuI and the Effect of Its Doping with Pb Atoms

2017 ◽  
Author(s):  
Mi-Kyung Han ◽  
Yingshi Jin ◽  
Da-Hee Lee ◽  
Sung-Jin Kim
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Transport Properties ◽  
Carrier Concentration ◽  
Thermoelectric Properties ◽  
Thermal Transport ◽  
Co Doping ◽  
Thermal Transport Properties ◽  
Co Doped

In order to understand the effect of Pb-CuI co-doping on the thermoelectric performance of Bi2Te3, n-type Bi2Te3 co-doped with x at% CuI and 1/2x at% Pb (x = 0, 0.01, 0.03, 0.05, 0.07, and 0.10) were prepared via high temperature solid state reaction and consolidated using spark plasma sintering. Electron and thermal transport properties, i.e., electrical conductivity, carrier concentration, Hall mobility, Seebeck coefficient, and thermal conductivity, of CuI-Pb co-doped Bi2Te3 were measured in the temperature range from 300 K to 523 K and compared to corresponding x% of CuI-doped Bi2Te3 and undoped Bi2Te3. The addition of a small amount of Pb significantly decreased the carrier concentration, which could be attributed to the holes from Pb atoms, thus the CuI-Pb co-doped samples show a lower electrical conductivity and a higher Seebeck coefficient compared to CuI-doped samples with similar x values. The incorporation of Pb into CuI-doped Bi2Te3 rarely changed the power factor because of the trade-off relationship between the electrical conductivity and the Seebeck coefficient. The total thermal conductivity(κtot) of co-doped samples (κtot ~1.4 W/m∙K at 300 K) is slightly lower than that of 1% CuI-doped Bi2Te3 (κtot~1.5 W/m∙K at 300 K) and undoped Bi2Te3 (κtot ~1.6 W/m∙K at 300 K) due to the alloy scattering. The 1% CuI-Pb co-doped Bi2Te3 sample shows the highest ZT value of 0.96 at 370 K. All data on electrical and thermal transport properties suggest that the thermoelectric properties of Bi2Te3 and its operating temperature can be controlled by co-doping.

scholarly journals A synergistic approach to achieving the high thermoelectric performance of La-doped SnTe using resonance state and partial band convergence

2021 ◽  
Author(s):  
Ranita Basu ◽  
Mandava Srikanth ◽  
Bayikadi Khasimsaheb ◽  
Sivaiah Bathula ◽  
V. Sai Muthu Kumar ◽  
...  
Keyword(s):  
Carrier Concentration ◽  
Valence Band ◽  
Resonance State ◽  
Thermoelectric Performance ◽  
High Carrier Concentration ◽  
Synergistic Approach ◽  
High Carrier ◽  
La Doped ◽  
Very High

SnTe is an alternate variant of PbTe possessing an analogous valence band(VB) pattern. However, SnTe exhibits low thermoelectric(TE) efficiency due to Sn defects triggering very high carrier concentration (n). Thus,...

Deep defect level engineering: a strategy of optimizing the carrier concentration for high thermoelectric performance

2018 ◽  
Vol 11 (4) ◽  
pp. 933-940 ◽  
Author(s):  
Qian Zhang ◽  
Qichen Song ◽  
Xinyu Wang ◽  
Jingying Sun ◽  
Qing Zhu ◽  
...  
Keyword(s):  
Carrier Concentration ◽  
Thermoelectric Properties ◽  
Thermoelectric Performance ◽  
Defect Level ◽  
Deep Defect

Thermoelectric properties are heavily dependent on the carrier concentration, and therefore the optimization of carrier concentration plays a central role in achieving high thermoelectric performance.

Bi–Zn codoping in GeTe synergistically enhances band convergence and phonon scattering for high thermoelectric performance

2020 ◽  
Vol 8 (41) ◽  
pp. 21642-21648 ◽  
Author(s):  
Zhe Guo ◽  
Qiang Zhang ◽  
Hongxiang Wang ◽  
Xiaojian Tan ◽  
Fanfan Shi ◽  
...  
Keyword(s):  
Valence Band ◽  
Thermoelectric Properties ◽  
Phonon Scattering ◽  
Thermoelectric Performance ◽  
Multiple Defect

Bi–Zn codoping promotes valence band convergence and strengthens multiple defect-phonon scattering in GeTe, leading to obviously improved thermoelectric properties.

scholarly journals Substantial thermoelectric enhancement achieved by manipulating the band structure and dislocations in Ag and La co-doped SnTe

2021 ◽  
Author(s):  
Wenjing Xu ◽  
Zhongwei Zhang ◽  
Chengyan Liu ◽  
Jie Gao ◽  
Zhenyuan Ye ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Carrier Concentration ◽  
Power Factor ◽  
Figure Of Merit ◽  
Performance Enhancement ◽  
Thermoelectric Performance ◽  
Electronic Band ◽  
Co Doping ◽  
High Carrier ◽  
Valence Bands

AbstractEco-friendly SnTe based thermoelectric materials are intensively studied recently as candidates to replace PbTe; yet the thermoelectric performance of SnTe is suppressed by its intrinsically high carrier concentration and high thermal conductivity. In this work, we confirm that the Ag and La co-doping can be applied to simultaneously enhance the power factor and reduce the thermal conductivity, contributing to a final promotion of figure of merit. On one hand, the carrier concentration and band offset between valence bands are concurrently reduced, promoting the power factor to a highest value of ∼2436 µW·m−1·K−2 at 873 K. On the other hand, lots of dislocations (∼3.16×107 mm−2) associated with impurity precipitates are generated, resulting in the decline of thermal conductivity to a minimum value of 1.87 W·m−1·K−1 at 873 K. As a result, a substantial thermoelectric performance enhancement up to zT ≈ 1.0 at 873 K is obtained for the sample Sn0.94Ag0.09La0.05Te, which is twice that of the pristine SnTe (zT ≈ 0.49 at 873 K). This strategy of synergistic manipulation of electronic band and microstructures via introducing rare earth elements could be applied to other systems to improve thermoelectric performance.

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