scholarly journals Enhancement of Thermoelectric Performance in CuSbSe 2 Nanoplate‐Based Pellets by Texture Engineering and Carrier Concentration Optimization

Small ◽  
2018 ◽  
Vol 14 (50) ◽  
pp. 1803092 ◽  
Author(s):  
Yubo Luo ◽  
Chengfeng Du ◽  
Qinghua Liang ◽  
Yun Zheng ◽  
Beibei Zhu ◽  
...  
2017 ◽  
Vol 5 (35) ◽  
pp. 18808-18815 ◽  
Author(s):  
Yuanbo Yang ◽  
Pengzhan Ying ◽  
Jinzhi Wang ◽  
Xianglian Liu ◽  
Zhengliang Du ◽  
...  

Through coordination of the Seebeck coefficient and carrier concentration in Cu3SnS4, TE performance improves significantly with the ZT value of 0.75 at 790 K.


2019 ◽  
Vol 7 (34) ◽  
pp. 10507-10513 ◽  
Author(s):  
Mengmeng Zhang ◽  
Dongyang Wang ◽  
Cheng Chang ◽  
Tao Lin ◽  
Kedong Wang ◽  
...  

Oxygen is adsorbed when SnSe is exposed to air and it acts as a hole-like acceptor. The thermoelectric performance of n-type polycrystalline SnSe can be promoted through optimizing carrier concentration via preventing oxygen adsorption.


RSC Advances ◽  
2015 ◽  
Vol 5 (69) ◽  
pp. 56382-56390 ◽  
Author(s):  
Bao-Zhen Sun ◽  
Zuju Ma ◽  
Chao He ◽  
Kechen Wu

The synergistic deployment of the effects of temperature and carrier concentration raises the ZT of SnS to a high value (1.61 ± 0.02).


2018 ◽  
Vol 6 (39) ◽  
pp. 18928-18937 ◽  
Author(s):  
Yuchong Qiu ◽  
Ying Liu ◽  
Jinwen Ye ◽  
Jun Li ◽  
Lixian Lian

Doping Sn into the Cu2Te lattice can synergistically enhance the power factor and decrease thermal conductivity, leading to remarkably optimized zTs. The lone pair electrons from the 5s orbital of Sn can increase the DOS near the Fermi level of Cu2Te to promote PF and reduce κe by decreasing the carrier concentration. This study explores a scalable strategy to optimize the thermoelectric performance for intrinsically highly degenerate semiconductors.


2020 ◽  
Vol 8 (10) ◽  
pp. 5332-5341 ◽  
Author(s):  
Khasim Saheb Bayikadi ◽  
Chien Ting Wu ◽  
Li-Chyong Chen ◽  
Kuei-Hsien Chen ◽  
Fang-Cheng Chou ◽  
...  

An optimized two-step melt-quenching synthesis method is proposed for GeTe to show a highly reproducible high ZT ∼ 2.35 at 800 K (in Ge0.9Sb0.1Te) through simultaneous carrier concentration and microstructural control.


2019 ◽  
Vol 7 (3) ◽  
pp. 1045-1054 ◽  
Author(s):  
Hasbuna Kamila ◽  
Prashant Sahu ◽  
Aryan Sankhla ◽  
Mohammad Yasseri ◽  
Hoang-Ngan Pham ◽  
...  

Figure of merit zT mapping of p-Mg2Si1−xSnx with respect to carrier concentration.


Sign in / Sign up

Export Citation Format

Share Document