Adsorption-controlled growth and the influence of stoichiometry on electronic transport in hybrid molecular beam epitaxy-grown BaSnO3 films

2017 ◽  
Vol 5 (23) ◽  
pp. 5730-5736 ◽  
Author(s):  
Abhinav Prakash ◽  
Peng Xu ◽  
Xuewang Wu ◽  
Greg Haugstad ◽  
Xiaojia Wang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Electronic Transport ◽  
Electron Mobility ◽  
Molecular Beam ◽  
Charge Compensation ◽  
Controlled Growth ◽  
P Adsorption

Adsorption-controlled growth and strong charge compensation accompanied by decreased electron mobility due to cation non-stoichiometry was discovered in epitaxial BaSnO3 films using a hybrid MBE approach.

scholarly journals Adsorption-controlled growth of Ga2O3 by suboxide molecular-beam epitaxy

APL Materials ◽  
2021 ◽  
Vol 9 (3) ◽  
pp. 031101
Author(s):  
Patrick Vogt ◽  
Felix V. E. Hensling ◽  
Kathy Azizie ◽  
Celesta S. Chang ◽  
David Turner ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Controlled Growth

scholarly journals Adsorption-controlled growth of MnTe(Bi2Te3)n by molecular beam epitaxy exhibiting stoichiometry-controlled magnetism

2020 ◽  
Vol 4 (11) ◽  
Author(s):  
Jason Lapano ◽  
Lauren Nuckols ◽  
Alessandro R. Mazza ◽  
Yun-Yi Pai ◽  
Jie Zhang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Controlled Growth

Defect-controlled growth of GaN nanorods on (0001)sapphire by molecular beam epitaxy

2008 ◽  
Vol 93 (11) ◽  
pp. 111911 ◽  
Author(s):  
D. Cherns ◽  
L. Meshi ◽  
I. Griffiths ◽  
S. Khongphetsak ◽  
S. V. Novikov ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Controlled Growth

High-electron-mobility ZnO epilayers grown by plasma-assisted molecular beam epitaxy

2004 ◽  
Vol 265 (1-2) ◽  
pp. 34-40 ◽  
Author(s):  
Kazuhiro Miyamoto ◽  
Michihiro Sano ◽  
Hiroyuki Kato ◽  
Takafumi Yao
Keyword(s):  
Molecular Beam Epitaxy ◽  
Electron Mobility ◽  
Molecular Beam ◽  
High Electron ◽  
High Electron Mobility

Electron mobility and Si incorporation in InxGa1−xAs layers grown on GaAs by molecular beam epitaxy

1992 ◽  
Vol 61 (7) ◽  
pp. 789-791 ◽  
Author(s):  
M. J. Ekenstedt ◽  
P. Songpongs ◽  
T. G. Andersson
Keyword(s):  
Molecular Beam Epitaxy ◽  
Electron Mobility ◽  
Molecular Beam
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