scholarly journals Highly sensitive extended gate-AlGaN/GaN high electron mobility transistor for bioassay applications

RSC Advances ◽  
2017 ◽  
Vol 7 (88) ◽  
pp. 55835-55838 ◽  
Author(s):  
Xiangzhen Ding ◽  
Bin Miao ◽  
Zhiqi Gu ◽  
Baojun Wu ◽  
Yimin Hu ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Sensitivity ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Gan Hemt ◽  
Highly Sensitive

An extended gate-AlGaN/GaN high electron mobility transistor (EG-AlGaN/GaN HEMT) with a high sensitivity for bioassay has been developed.

scholarly journals Highly sensitive AlGaN/GaN HEMT biosensors using an ethanolamine modification strategy for bioassay applications

RSC Advances ◽  
2019 ◽  
Vol 9 (27) ◽  
pp. 15341-15349 ◽  
Author(s):  
Zhiqi Gu ◽  
Jin Wang ◽  
Bin Miao ◽  
Lei Zhao ◽  
Xinsheng Liu ◽  
...  
Keyword(s):  
Surface Modification ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Gan Hemt ◽  
Highly Efficient ◽  
Highly Sensitive ◽  
Amine Groups

We propose a highly efficient surface modification strategy on an AlGaN/GaN high electron mobility transistor, where ethanolamine was utilized to functionalize the surface of GaN and provided amphoteric amine groups for bioassay application.

A differential extended gate-AlGaN/GaN HEMT sensor for real-time detection of ionic pollutants

2019 ◽  
Vol 11 (31) ◽  
pp. 3981-3986 ◽  
Author(s):  
Lei Zhao ◽  
Xinsheng Liu ◽  
Bin Miao ◽  
Zhiqi Gu ◽  
Jin Wang ◽  
...  
Keyword(s):  
Real Time ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Gan Hemt ◽  
Real Time Detection

In this study, we propose a differential extended gate (DEG)-AlGaN/GaN high electron mobility transistor (HEMT) sensor to detect ionic pollutants in solution.

scholarly journals An effective hydroxylation route for a highly sensitive glucose sensor using APTES/GOx functionalized AlGaN/GaN high electron mobility transistor

RSC Advances ◽  
2020 ◽  
Vol 10 (19) ◽  
pp. 11393-11399 ◽  
Author(s):  
Jun Liu ◽  
Heqiu Zhang ◽  
Dongyang Xue ◽  
Aqrab ul Ahmad ◽  
Xiaochuan Xia ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Glucose Sensor ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Highly Sensitive

A highly sensitive glucose sensor based on AlGaN/GaN high electron mobility transistor (HEMT) has been fabricated.

An electronic enzyme-linked immunosorbent assay platform for protein analysis based on magnetic beads and AlGaN/GaN high electron mobility transistors

The Analyst ◽  
2020 ◽  
Vol 145 (7) ◽  
pp. 2725-2730 ◽  
Author(s):  
Jin Wang ◽  
Zhiqi Gu ◽  
Xinsheng Liu ◽  
Lei Zhao ◽  
Huoxiang Peng ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Magnetic Beads ◽  
High Sensitivity ◽  
High Electron Mobility Transistors ◽  
High Electron Mobility Transistor ◽  
Fast Response ◽  
Enzyme Linked Immunosorbent Assay ◽  
High Electron ◽  
High Electron Mobility ◽  
Detection Of Biomolecules

The AlGaN/GaN high electron mobility transistor (HEMT) biosensors have the characteristics of high sensitivity, stability and fast response in the detection of biomolecules.

An Analytical Model for Field-Plate Optimization in High Electron Mobility Transistor

2012 ◽  
Vol 529 ◽  
pp. 33-36
Author(s):  
Qian Luo ◽  
Jiang Feng Du ◽  
Xiang Wang ◽  
Ning Ning ◽  
Yang Liu ◽  
...  
Keyword(s):  
Analytical Model ◽  
Electron Mobility ◽  
Potential Distribution ◽  
High Electron Mobility Transistor ◽  
Critical Parameters ◽  
Physical Parameters ◽  
High Electron ◽  
High Electron Mobility ◽  
Field Plate ◽  
Gan Hemt

An analytical model for field-plate (FP) optimization in high electron mobility transistor (HEMT) is reported. With the potential distribution in device’s channel being modeled in terms of physical parameters, the two critical parameters of FP, i.e., the insulator thickness and the FP length, are optimized respectively. Using the model, the optimization of the FP structure in a typical undoped AlGaN/GaN HEMT is described in detail.

High resistivity isolation for AlGaN/GaN HEMT using Al double-implantation

2014 ◽  
Vol 1635 ◽  
pp. 9-14 ◽  
Author(s):  
Andrzej Taube ◽  
Maciej Kozubal ◽  
Jakub Kaczmarski ◽  
Marcin Juchniewicz ◽  
Adam Barcz ◽  
...  
Keyword(s):  
Crystal Lattice ◽  
Sheet Resistance ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Resistivity ◽  
High Electron ◽  
Electrical Measurements ◽  
High Electron Mobility ◽  
Gan Hemt ◽  
Insulating Properties

ABSTRACTThe paper reports on the fabrication of electrical isolation for planar AlGaN/GaN high electron mobility transistor using Al double-implantation. The implantation was performed using Al+ ions with energies of 800 keV and 300 keV with doses of 1.5×1013 ion/cm2 and 1×1013 ion/cm2, respectively. Electrical measurements have shown that after implantation the sheet resistance was 1.8×1011 Ω/□ and increased to 1.17×1014 Ω/□ and 3.29×1012 Ω/□ after annealing at 400°C and 600°C respectively. Annealing at 800°C decreased the sheet resistance to 1.38×108 Ω/□. Characterization by XRD, Raman and photoluminescence spectroscopy give evidence that implantation damages the crystal lattice, yielding insulating properties. It has been demonstrated that the isolation is stable up to 600°C.

Design and Research on a Novel NEMS Accelerated Sensor Based on GaAs PHEMT

2010 ◽  
Vol 97-101 ◽  
pp. 4221-4224
Author(s):  
Bin Zhen Zhang ◽  
Xiao Juan Jia ◽  
Jun Liu ◽  
Chen Yang Xue ◽  
Ting Ting Hou
Keyword(s):  
Electron Mobility ◽  
Sensitive Element ◽  
High Sensitivity ◽  
Drain Current ◽  
High Electron Mobility Transistor ◽  
Main Process ◽  
High Electron ◽  
Micro Machining ◽  
High Electron Mobility ◽  
Saturation Region

A novel nano electro mechanical system (NEMS) accelerated sensor which is based on piezo-resistive effect of GaAs/AlGaAs/InGaAs Pseudomorph-High Electron Mobility Transistor (PHEMT) has been designed and fabricated. The structures of sensor and sensitive element are described in this paper. The main process of Micro-machining is introduced in the text. The static press test has been performed and the testing results show that the NEMS accelerated sensor could sense exterior stress well. Then, a testing circuit is designed to detect the change of drain current under pressure. Through the vibration experiments of the sensor, the sensitivity has been discussed and given out. The conclusion that the sensitivity is maximizing in the saturation region can be got. And the measurement result shows that the sensor has good linearity and high sensitivity with 0.177mV/g in the saturation region.

An AuNPs-functionalized AlGaN/GaN high electron mobility transistor sensor for ultrasensitive detection of TNT

RSC Advances ◽  
2015 ◽  
Vol 5 (120) ◽  
pp. 98724-98729 ◽  
Author(s):  
Yahui Guo ◽  
Xiongtao Wang ◽  
Bin Miao ◽  
Ying Li ◽  
Weirong Yao ◽  
...  
Keyword(s):  
Gold Nanoparticle ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
Ultrasensitive Detection ◽  
High Electron ◽  
High Electron Mobility ◽  
Gan Hemt ◽  
Tnt Detection

In this work, we developed a gold nanoparticle functionalized AlGaN/GaN HEMT sensor for fast and ultrasensitive detection of TNT. This HEMT sensor showed attractive properties for TNT detection in terms of speed, sensitivity and miniaturization.

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