A differential extended gate-AlGaN/GaN HEMT sensor for real-time detection of ionic pollutants

2019 ◽  
Vol 11 (31) ◽  
pp. 3981-3986 ◽  
Author(s):  
Lei Zhao ◽  
Xinsheng Liu ◽  
Bin Miao ◽  
Zhiqi Gu ◽  
Jin Wang ◽  
...  
Keyword(s):  
Real Time ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Gan Hemt ◽  
Real Time Detection

In this study, we propose a differential extended gate (DEG)-AlGaN/GaN high electron mobility transistor (HEMT) sensor to detect ionic pollutants in solution.

scholarly journals Highly sensitive extended gate-AlGaN/GaN high electron mobility transistor for bioassay applications

RSC Advances ◽  
2017 ◽  
Vol 7 (88) ◽  
pp. 55835-55838 ◽  
Author(s):  
Xiangzhen Ding ◽  
Bin Miao ◽  
Zhiqi Gu ◽  
Baojun Wu ◽  
Yimin Hu ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Sensitivity ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Gan Hemt ◽  
Highly Sensitive

An extended gate-AlGaN/GaN high electron mobility transistor (EG-AlGaN/GaN HEMT) with a high sensitivity for bioassay has been developed.

scholarly journals Highly sensitive AlGaN/GaN HEMT biosensors using an ethanolamine modification strategy for bioassay applications

RSC Advances ◽  
2019 ◽  
Vol 9 (27) ◽  
pp. 15341-15349 ◽  
Author(s):  
Zhiqi Gu ◽  
Jin Wang ◽  
Bin Miao ◽  
Lei Zhao ◽  
Xinsheng Liu ◽  
...  
Keyword(s):  
Surface Modification ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Gan Hemt ◽  
Highly Efficient ◽  
Highly Sensitive ◽  
Amine Groups

We propose a highly efficient surface modification strategy on an AlGaN/GaN high electron mobility transistor, where ethanolamine was utilized to functionalize the surface of GaN and provided amphoteric amine groups for bioassay application.

An Analytical Model for Field-Plate Optimization in High Electron Mobility Transistor

2012 ◽  
Vol 529 ◽  
pp. 33-36
Author(s):  
Qian Luo ◽  
Jiang Feng Du ◽  
Xiang Wang ◽  
Ning Ning ◽  
Yang Liu ◽  
...  
Keyword(s):  
Analytical Model ◽  
Electron Mobility ◽  
Potential Distribution ◽  
High Electron Mobility Transistor ◽  
Critical Parameters ◽  
Physical Parameters ◽  
High Electron ◽  
High Electron Mobility ◽  
Field Plate ◽  
Gan Hemt

An analytical model for field-plate (FP) optimization in high electron mobility transistor (HEMT) is reported. With the potential distribution in device’s channel being modeled in terms of physical parameters, the two critical parameters of FP, i.e., the insulator thickness and the FP length, are optimized respectively. Using the model, the optimization of the FP structure in a typical undoped AlGaN/GaN HEMT is described in detail.

Real-time x-ray response of biocompatible solution gate AlGaN/GaN high electron mobility transistor devices

2010 ◽  
Vol 96 (9) ◽  
pp. 092110 ◽  
Author(s):  
Markus Hofstetter ◽  
John Howgate ◽  
Ian D. Sharp ◽  
Maren Funk ◽  
Martin Stutzmann ◽  
...  
Keyword(s):  
Real Time ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
X Ray

High resistivity isolation for AlGaN/GaN HEMT using Al double-implantation

2014 ◽  
Vol 1635 ◽  
pp. 9-14 ◽  
Author(s):  
Andrzej Taube ◽  
Maciej Kozubal ◽  
Jakub Kaczmarski ◽  
Marcin Juchniewicz ◽  
Adam Barcz ◽  
...  
Keyword(s):  
Crystal Lattice ◽  
Sheet Resistance ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Resistivity ◽  
High Electron ◽  
Electrical Measurements ◽  
High Electron Mobility ◽  
Gan Hemt ◽  
Insulating Properties

ABSTRACTThe paper reports on the fabrication of electrical isolation for planar AlGaN/GaN high electron mobility transistor using Al double-implantation. The implantation was performed using Al+ ions with energies of 800 keV and 300 keV with doses of 1.5×1013 ion/cm2 and 1×1013 ion/cm2, respectively. Electrical measurements have shown that after implantation the sheet resistance was 1.8×1011 Ω/□ and increased to 1.17×1014 Ω/□ and 3.29×1012 Ω/□ after annealing at 400°C and 600°C respectively. Annealing at 800°C decreased the sheet resistance to 1.38×108 Ω/□. Characterization by XRD, Raman and photoluminescence spectroscopy give evidence that implantation damages the crystal lattice, yielding insulating properties. It has been demonstrated that the isolation is stable up to 600°C.

An AuNPs-functionalized AlGaN/GaN high electron mobility transistor sensor for ultrasensitive detection of TNT

RSC Advances ◽  
2015 ◽  
Vol 5 (120) ◽  
pp. 98724-98729 ◽  
Author(s):  
Yahui Guo ◽  
Xiongtao Wang ◽  
Bin Miao ◽  
Ying Li ◽  
Weirong Yao ◽  
...  
Keyword(s):  
Gold Nanoparticle ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
Ultrasensitive Detection ◽  
High Electron ◽  
High Electron Mobility ◽  
Gan Hemt ◽  
Tnt Detection

In this work, we developed a gold nanoparticle functionalized AlGaN/GaN HEMT sensor for fast and ultrasensitive detection of TNT. This HEMT sensor showed attractive properties for TNT detection in terms of speed, sensitivity and miniaturization.

A sandwich-structured AlGaN/GaN HEMT with broad transconductance and high breakdown voltage

2019 ◽  
Vol 7 (39) ◽  
pp. 12075-12079 ◽  
Author(s):  
Dingbo Chen ◽  
Zhikun Liu ◽  
Jinghan Liang ◽  
Lijun Wan ◽  
Zhuoliang Xie ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Gan Hemt ◽  
High Breakdown Voltage

This paper reports a sandwich-structured AlGaN/GaN high electron mobility transistor (HEMT).

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