An electronic enzyme-linked immunosorbent assay platform for protein analysis based on magnetic beads and AlGaN/GaN high electron mobility transistors

The Analyst ◽  
2020 ◽  
Vol 145 (7) ◽  
pp. 2725-2730 ◽  
Author(s):  
Jin Wang ◽  
Zhiqi Gu ◽  
Xinsheng Liu ◽  
Lei Zhao ◽  
Huoxiang Peng ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Magnetic Beads ◽  
High Sensitivity ◽  
High Electron Mobility Transistors ◽  
High Electron Mobility Transistor ◽  
Fast Response ◽  
Enzyme Linked Immunosorbent Assay ◽  
High Electron ◽  
High Electron Mobility ◽  
Detection Of Biomolecules

The AlGaN/GaN high electron mobility transistor (HEMT) biosensors have the characteristics of high sensitivity, stability and fast response in the detection of biomolecules.

scholarly journals Correction: An electronic enzyme-linked immunosorbent assay platform for protein analysis based on magnetic beads and AlGaN/GaN high electron mobility transistors

The Analyst ◽  
2021 ◽  
Author(s):  
Jin Wang ◽  
Zhiqi Gu ◽  
Xinsheng Liu ◽  
Lei Zhao ◽  
Huoxiang Peng ◽  
...  
Keyword(s):  
Immunosorbent Assay ◽  
Electron Mobility ◽  
Magnetic Beads ◽  
Protein Analysis ◽  
High Electron Mobility Transistors ◽  
Enzyme Linked Immunosorbent Assay ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

Correction for ‘An electronic enzyme-linked immunosorbent assay platform for protein analysis based on magnetic beads and AlGaN/GaN high electron mobility transistors’ by Jin Wang et al., Analyst, 2020, 145, 2725–2730, DOI: 10.1039/C9AN01809C.

scholarly journals AlGaN/GaN High Electron Mobility Transistors on Semi-Insulating Ammono-GaN Substrates with Regrown Ohmic Contacts

Micromachines ◽  
2018 ◽  
Vol 9 (11) ◽  
pp. 546 ◽  
Author(s):  
Wojciech Wojtasiak ◽  
Marcin Góralczyk ◽  
Daniel Gryglewski ◽  
Marcin Zając ◽  
Robert Kucharski ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Ohmic Contacts ◽  
High Electron Mobility Transistors ◽  
High Electron Mobility Transistor ◽  
Maximum Output ◽  
High Electron ◽  
Output Current ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Access Resistance

AlGaN/GaN high electron mobility transistors on semi-insulating bulk ammonothermal GaN have been investigated. By application of regrown ohmic contacts, the problem with obtaining low resistance ohmic contacts to low-dislocation high electron mobility transistor (HEMT) structures was solved. The maximum output current was about 1 A/mm and contact resistances was in the range of 0.3–0.6 Ω ·mm. Good microwave performance was obtained due to the absence of parasitic elements such as high access resistance.

The AlInGaN back barrier effect on DC characteristics of AlGaN/GaN high electron mobility transistor

2019 ◽  
Vol 33 (18) ◽  
pp. 1950190
Author(s):  
Hai Li Wang ◽  
Peng Yang ◽  
Kun Xu ◽  
Xiang Yang Duan ◽  
Shu Xiang Sun
Keyword(s):  
Mole Fraction ◽  
Electron Mobility ◽  
Transport Model ◽  
High Electron Mobility Transistors ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Conduction Band Offset ◽  
Electron Mobility Transistors ◽  
The Impact

In this paper, we investigated the impact of thickness and mole fraction AlInGaN back barrier on the DC performance of AlGaN/GaN high electron mobility transistors (HEMTs) by numerical simulation. The simulations are performed using the hydrodynamic transport model (HD). The simulation results indicated that an inserted AlInGaN back barrier with increasing thickness and mole fraction could effectively confine the electron in the channel, resulting in a significant improvement of the channel current and transconductance. Additionally, the variation of conduction band offset and the increase of total number electron in the channel led to the threshold voltage moving toward a more negative value.

Applications of GaN-Based High Electron Mobility Transistors in Large-Size Devices

2015 ◽  
Vol 764-765 ◽  
pp. 486-490
Author(s):  
Chih Hao Wang ◽  
Liang Yu Su ◽  
Finella Lee ◽  
Jian Jang Huang
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Saturation Current ◽  
High Electron Mobility ◽  
Enhancement Mode ◽  
Electron Mobility Transistors ◽  
Large Size ◽  
Novel Design

We demonstrate a novel design of large-size device in AlGaN/GaN high-electron-mobility transistor (HEMT). Depletion mode (D-mode) HEMTs and enhancement mode (E-mode) HEMTs are fabricated in our research. The saturation current of D-mode HEMTs is over 6A. By using Cascode structure, the D-mode HEMT becomes a normally-off device efficiently, and the threshold voltage of it rises from-7V to 2V. By using BCB (Benzocyclobutene) as the passivation, the E-mode HEMT shows an excellent characteristic. Also, when the VGS of the E-mode HEMT is over 9V, it still shows a good performance.

scholarly journals Highly sensitive extended gate-AlGaN/GaN high electron mobility transistor for bioassay applications

RSC Advances ◽  
2017 ◽  
Vol 7 (88) ◽  
pp. 55835-55838 ◽  
Author(s):  
Xiangzhen Ding ◽  
Bin Miao ◽  
Zhiqi Gu ◽  
Baojun Wu ◽  
Yimin Hu ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Sensitivity ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Gan Hemt ◽  
Highly Sensitive

An extended gate-AlGaN/GaN high electron mobility transistor (EG-AlGaN/GaN HEMT) with a high sensitivity for bioassay has been developed.

scholarly journals An Overview of Normally-Off GaN-Based High Electron Mobility Transistors

Materials ◽  
2019 ◽  
Vol 12 (10) ◽  
pp. 1599 ◽  
Author(s):  
Fabrizio Roccaforte ◽  
Giuseppe Greco ◽  
Patrick Fiorenza ◽  
Ferdinando Iucolano
Keyword(s):  
Power Electronics ◽  
Electron Mobility ◽  
Wide Band ◽  
High Electron Mobility Transistors ◽  
High Electron Mobility Transistor ◽  
Special Focus ◽  
High Electron ◽  
High Electron Mobility ◽  
Advantages And Disadvantages ◽  
Electron Mobility Transistors

Today, the introduction of wide band gap (WBG) semiconductors in power electronics has become mandatory to improve the energy efficiency of devices and modules and to reduce the overall electric power consumption in the world. Due to its excellent properties, gallium nitride (GaN) and related alloys (e.g., AlxGa1−xN) are promising semiconductors for the next generation of high-power and high-frequency devices. However, there are still several technological concerns hindering the complete exploitation of these materials. As an example, high electron mobility transistors (HEMTs) based on AlGaN/GaN heterostructures are inherently normally-on devices. However, normally-off operation is often desired in many power electronics applications. This review paper will give a brief overview on some scientific and technological aspects related to the current normally-off GaN HEMTs technology. A special focus will be put on the p-GaN gate and on the recessed gate hybrid metal insulator semiconductor high electron mobility transistor (MISHEMT), discussing the role of the metal on the p-GaN gate and of the insulator in the recessed MISHEMT region. Finally, the advantages and disadvantages in the processing and performances of the most common technological solutions for normally-off GaN transistors will be summarized.

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