An AuNPs-functionalized AlGaN/GaN high electron mobility transistor sensor for ultrasensitive detection of TNT

RSC Advances ◽  
2015 ◽  
Vol 5 (120) ◽  
pp. 98724-98729 ◽  
Author(s):  
Yahui Guo ◽  
Xiongtao Wang ◽  
Bin Miao ◽  
Ying Li ◽  
Weirong Yao ◽  
...  
Keyword(s):  
Gold Nanoparticle ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
Ultrasensitive Detection ◽  
High Electron ◽  
High Electron Mobility ◽  
Gan Hemt ◽  
Tnt Detection

In this work, we developed a gold nanoparticle functionalized AlGaN/GaN HEMT sensor for fast and ultrasensitive detection of TNT. This HEMT sensor showed attractive properties for TNT detection in terms of speed, sensitivity and miniaturization.

A differential extended gate-AlGaN/GaN HEMT sensor for real-time detection of ionic pollutants

2019 ◽  
Vol 11 (31) ◽  
pp. 3981-3986 ◽  
Author(s):  
Lei Zhao ◽  
Xinsheng Liu ◽  
Bin Miao ◽  
Zhiqi Gu ◽  
Jin Wang ◽  
...  
Keyword(s):  
Real Time ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Gan Hemt ◽  
Real Time Detection

In this study, we propose a differential extended gate (DEG)-AlGaN/GaN high electron mobility transistor (HEMT) sensor to detect ionic pollutants in solution.

scholarly journals Highly sensitive extended gate-AlGaN/GaN high electron mobility transistor for bioassay applications

RSC Advances ◽  
2017 ◽  
Vol 7 (88) ◽  
pp. 55835-55838 ◽  
Author(s):  
Xiangzhen Ding ◽  
Bin Miao ◽  
Zhiqi Gu ◽  
Baojun Wu ◽  
Yimin Hu ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Sensitivity ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Gan Hemt ◽  
Highly Sensitive

An extended gate-AlGaN/GaN high electron mobility transistor (EG-AlGaN/GaN HEMT) with a high sensitivity for bioassay has been developed.

scholarly journals Highly sensitive AlGaN/GaN HEMT biosensors using an ethanolamine modification strategy for bioassay applications

RSC Advances ◽  
2019 ◽  
Vol 9 (27) ◽  
pp. 15341-15349 ◽  
Author(s):  
Zhiqi Gu ◽  
Jin Wang ◽  
Bin Miao ◽  
Lei Zhao ◽  
Xinsheng Liu ◽  
...  
Keyword(s):  
Surface Modification ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Gan Hemt ◽  
Highly Efficient ◽  
Highly Sensitive ◽  
Amine Groups

We propose a highly efficient surface modification strategy on an AlGaN/GaN high electron mobility transistor, where ethanolamine was utilized to functionalize the surface of GaN and provided amphoteric amine groups for bioassay application.

An Analytical Model for Field-Plate Optimization in High Electron Mobility Transistor

2012 ◽  
Vol 529 ◽  
pp. 33-36
Author(s):  
Qian Luo ◽  
Jiang Feng Du ◽  
Xiang Wang ◽  
Ning Ning ◽  
Yang Liu ◽  
...  
Keyword(s):  
Analytical Model ◽  
Electron Mobility ◽  
Potential Distribution ◽  
High Electron Mobility Transistor ◽  
Critical Parameters ◽  
Physical Parameters ◽  
High Electron ◽  
High Electron Mobility ◽  
Field Plate ◽  
Gan Hemt

An analytical model for field-plate (FP) optimization in high electron mobility transistor (HEMT) is reported. With the potential distribution in device’s channel being modeled in terms of physical parameters, the two critical parameters of FP, i.e., the insulator thickness and the FP length, are optimized respectively. Using the model, the optimization of the FP structure in a typical undoped AlGaN/GaN HEMT is described in detail.

High resistivity isolation for AlGaN/GaN HEMT using Al double-implantation

2014 ◽  
Vol 1635 ◽  
pp. 9-14 ◽  
Author(s):  
Andrzej Taube ◽  
Maciej Kozubal ◽  
Jakub Kaczmarski ◽  
Marcin Juchniewicz ◽  
Adam Barcz ◽  
...  
Keyword(s):  
Crystal Lattice ◽  
Sheet Resistance ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Resistivity ◽  
High Electron ◽  
Electrical Measurements ◽  
High Electron Mobility ◽  
Gan Hemt ◽  
Insulating Properties

ABSTRACTThe paper reports on the fabrication of electrical isolation for planar AlGaN/GaN high electron mobility transistor using Al double-implantation. The implantation was performed using Al+ ions with energies of 800 keV and 300 keV with doses of 1.5×1013 ion/cm2 and 1×1013 ion/cm2, respectively. Electrical measurements have shown that after implantation the sheet resistance was 1.8×1011 Ω/□ and increased to 1.17×1014 Ω/□ and 3.29×1012 Ω/□ after annealing at 400°C and 600°C respectively. Annealing at 800°C decreased the sheet resistance to 1.38×108 Ω/□. Characterization by XRD, Raman and photoluminescence spectroscopy give evidence that implantation damages the crystal lattice, yielding insulating properties. It has been demonstrated that the isolation is stable up to 600°C.

A sandwich-structured AlGaN/GaN HEMT with broad transconductance and high breakdown voltage

2019 ◽  
Vol 7 (39) ◽  
pp. 12075-12079 ◽  
Author(s):  
Dingbo Chen ◽  
Zhikun Liu ◽  
Jinghan Liang ◽  
Lijun Wan ◽  
Zhuoliang Xie ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Gan Hemt ◽  
High Breakdown Voltage

This paper reports a sandwich-structured AlGaN/GaN high electron mobility transistor (HEMT).

Impact of Parasitic Capacitor to the GaN HEMT Devices

2015 ◽  
Vol 764-765 ◽  
pp. 515-520
Author(s):  
Chia Lin Chen ◽  
Chih Huan Fang ◽  
Yuan Chao Niu ◽  
Yaow Ming Chen
Keyword(s):  
High Power ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
Switching Frequency ◽  
High Electron ◽  
High Electron Mobility ◽  
Gan Hemt ◽  
High Switching Frequency ◽  
Voltage Spike ◽  
The Impact

The objective of this paper is to evaluate the impact of the parasitic capacitor to the Gallium-Nitride (GaN) based high-electron-mobility transistor (HEMT). Because of the high switching frequency operation, the parasitic inductor has caught a lot of attention when the GaN HEMT is applied in the high power applications. However, the impact of parasitic capacitor to the GaN HEMT is not discussed in literatures. A prototype circuit is built and tested to evaluate the impacts of parasitic capacitor to the GaN HEMT performance. The results show that the parasitic capacitor can induce voltage spike and damage the GaN HEMT.

Ultrasensitive detection of Hg2+ using oligonucleotide-functionalized AlGaN/GaN high electron mobility transistor

2014 ◽  
Vol 105 (8) ◽  
pp. 083121 ◽  
Author(s):  
Junjie Cheng ◽  
Jiadong Li ◽  
Bin Miao ◽  
Jine Wang ◽  
Zhengyan Wu ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
Ultrasensitive Detection ◽  
High Electron ◽  
High Electron Mobility

scholarly journals Study on Characteristics of Enhancement-Mode Gallium-Nitride High-Electron-Mobility Transistor for the Design of Gate Drivers

Electronics ◽  
2020 ◽  
Vol 9 (10) ◽  
pp. 1573
Author(s):  
Sheng-Yi Tang
Keyword(s):  
Gallium Nitride ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
Experimental Results ◽  
High Electron ◽  
Electrical Characteristics ◽  
High Electron Mobility ◽  
Enhancement Mode ◽  
Gan Hemt ◽  
Source Voltage

An enhancement-mode gallium-nitride high-electron-mobility transistor (E-mode GaN HEMT) operated at high frequency is highly prone to current spikes (di/dt) and voltage spikes (dv/dt) in the parasitic inductor of its circuit, resulting in damage to the power switch. To highlight the phenomena of di/dt and dv/dt, this study connected the drain, source, and gate terminals in series with inductors (LD, LS, and LG, respectively). The objective was to explore the effects of di/dt and dv/dt phenomena and operating frequency (fS) on drain-to-source voltage (Vds), drain-to-source current (Ids), and gate-to-source voltage (Vgs). The experimental method comprised two projects: (1) establishment of a measurement system to assess the change of electrical characteristics of the E-mode GaN HEMT and (2) change of the fS and the inductances (i.e., LD, LS, and LG) in the circuit to measure the changes in Vds, Ids, and Vgs, thus summarizing the experimental results. According to the experimental results on electrical characteristics, a gate driver circuit may be designed to drive and protect the E-mode GaN HEMT while being actually applied to a 120-W synchronous buck converter with an output voltage of 12 V and an output current of 10 A.

scholarly journals AlGaN/GaN High Electron Mobility Transistor Structure Design and Effects on Electrical Properties

2000 ◽  
Vol 5 (S1) ◽  
pp. 349-354
Author(s):  
E.L. Piner ◽  
D.M. Keogh ◽  
J.S. Flynn ◽  
J.M Redwing
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron Mobility Transistor ◽  
Structure Design ◽  
High Electron ◽  
High Electron Mobility ◽  
Gas Channel ◽  
Si Doping ◽  
Gan Hemt ◽  
Hemt Structure

We report on the effect of strain induced polarization fields in AlGaN/GaN heterostructures due to the incorporation of Si dopant ions in the lattice. By Si-doping (Al)GaN, a contraction of the wurtzite unit cell can occur leading to strain in doped AlGaN/GaN heterostructures such as high electron mobility transistors (HEMTs). In a typical modulation doped AlGaN/GaN HEMT structure, the Si-doped AlGaN supply layer is separated from the two-dimensional electron gas channel by an undoped AlGaN spacer layer. This dopant-induced strain, which is tensile, can create an additional source of charge at the AlGaN:Si/AlGaN interface. The magnitude of this strain increases as the Si doping concentration increases and the AlN mole fraction in the AlGaN decreases. Consideration of this strain should be given in AlGaN/GaN HEMT structure design.

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