High-mobility p-type NiOx thin-film transistors processed at low temperatures with Al2O3 high-k dielectric

2016 ◽  
Vol 4 (40) ◽  
pp. 9438-9444 ◽  
Author(s):  
Fukai Shan ◽  
Ao Liu ◽  
Huihui Zhu ◽  
Weijin Kong ◽  
Jingquan Liu ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperatures ◽  
Thin Film Transistors ◽  
High Performance ◽  
Low Cost ◽  
Solution Process ◽  
High Mobility ◽  
High K ◽  
High K Dielectric ◽  
P Type

High-performance p-type NiOx thin-film transistors are fabricated via a low-cost solution process and exhibit a high mobility of around 15 cm2 V−1 s−1.

Eco-friendly, solution-processed In-W-O thin films and their applications in low-voltage, high-performance transistors

2016 ◽  
Vol 4 (20) ◽  
pp. 4478-4484 ◽  
Author(s):  
Ao Liu ◽  
Guoxia Liu ◽  
Huihui Zhu ◽  
Byoungchul Shin ◽  
Elvira Fortunato ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thin Film Transistors ◽  
High Performance ◽  
Low Voltage ◽  
Low Cost ◽  
Solution Process ◽  
Solution Processed

Eco-friendly IWO thin films are fabricated via a low-cost solution process and employed as channel layers in thin-film transistors.

scholarly journals High Performance P-Type Perovskite Lagao3 Thin Film Field Effect Transistor Prepared by Solution-Processed

2022 ◽  
Vol 2152 (1) ◽  
pp. 012008
Author(s):  
Qian Chen
Keyword(s):  
Thin Film ◽  
High Performance ◽  
Low Cost ◽  
Thin Film Transistor ◽  
Solution Process ◽  
Hole Mobility ◽  
Oxide Semiconductor ◽  
Future Design ◽  
Different Temperatures ◽  
P Type

Abstract Metal oxide semiconductor (MOS) is essential to compose high-performance electronic devices, however, the investigation on p-type MOS is relatively rare compared with its n-type counterpart. In this work, LaGaO3 thin films with superior p-type conductivity have been prepared via a facile solution process. Moreover, we have implemented Al2O3 and SiO2 as the dielectric of the p-channel LaGaO3 thin film transistors (TFTs) annealed at different temperatures. Particularly, the LaGaO3/Al2O3 TFTs annealed at 700 °C exhibit an ultrahigh hole mobility of 12.4 cm2V-1s-1, Under the same conditions, LaGaO3/Al2O3 thin film transistor is two orders of magnitude higher than LaGaO3/SiO2 thin film transistor. The advanced p-type characteristics of the LaGaO3 thin film, along with its facile low-cost fabrication process can shed new light on future design of high-performance complementary MOS circuit with other optimized facile-integrated dielectrics.

Low temperature and high performance ZnSnO thin film transistors engineered by in-situ thermal manipulation

2022 ◽  
Author(s):  
Wengao Pan ◽  
Xiaoliang Zhou ◽  
Qingping Lin ◽  
Jie Chen ◽  
Lei Lu ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
High Performance ◽  
Low Cost ◽  
High Mobility ◽  
Processing Temperature ◽  
Practical Application ◽  
Thermal Manipulation

Thin film transistors (TFT) with low cost, high mobility and low processing temperature are key enablers for practical application, which are always contradictory. In this work, we achieved high performance...

Soluble oxide gate dielectrics prepared using the self-combustion reaction for high-performance thin-film transistors

2014 ◽  
Vol 2 (28) ◽  
pp. 5695-5703 ◽  
Author(s):  
Eun Jin Bae ◽  
Young Hun Kang ◽  
Mijeong Han ◽  
Changjin Lee ◽  
Song Yun Cho
Keyword(s):  
Thin Film ◽  
Low Temperatures ◽  
Thin Film Transistors ◽  
High Performance ◽  
Gate Dielectrics ◽  
Solution Process ◽  
The Self ◽  
Oxide Thin Film ◽  
Combustion Chemistry ◽  
Metal Oxide Thin Film

We report the fabrication of high-performance metal oxide thin-film transistors (TFTs) with AlOx gate dielectrics using combustion chemistry in a solution process to provide energy to convert oxide precursors into oxides at low temperatures.

Low-cost lithographically patterned source/drain bottom contacts for high mobility p-type organic thin film transistors

2012 ◽  
Vol 1435 ◽  
Author(s):  
Robert Mueller ◽  
Steve Smout ◽  
Myriam Willegems ◽  
Jan Genoe ◽  
Paul Heremans
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Low Cost ◽  
High Mobility ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Short Channel ◽  
Bottom Contact ◽  
Gold Metallization

ABSTRACTShort channel organic thin film transistors in bottom-gate, bottom contact configuration use typically gold metallization for the source and drain contacts because this metal can easily be cleaned from photoresist residuals by oxygen plasma or ultraviolet-ozone and allows also surface modification by self-assembled monolayers (e.g. thiols). Alternative low-cost bottom contact metallization for high performance short-channel organic thin film transistors are scarce because of the incompatibility of the bottom contact material with the cleaning step. In this work a new process flow, involving a temporary thin aluminum protection layer, is presented. Short channel (3.4 μm) pentacene transistors with lithographical defined and thiol modified silver source/drain bottom contacts (25 nm thick, on a 2 nm titanium adhesion layer) prepared according to this process achieved a saturation mobility of 0.316 cm2/(V.s), and this at a metal cost below 1% of the standard 30 nm thick gold metallization.

Solution-Processed La Alloyed ZrOx High-k Dielectric for High-Performance ZnO Thin-Film Transistors

2020 ◽  
pp. 1-1 ◽  
Author(s):  
Md Mobaidul Islam ◽  
Jewel Kumer Saha ◽  
Ravindra Naik Bukke ◽  
Md Mehedi Hasan ◽  
Mohammad Masum Billah ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Zno Thin Film ◽  
Solution Processed ◽  
High K ◽  
High K Dielectric

scholarly journals Fully solution-induced high performance indium oxide thin film transistors with ZrOx high-k gate dielectrics

RSC Advances ◽  
2018 ◽  
Vol 8 (30) ◽  
pp. 16788-16799 ◽  
Author(s):  
Li Zhu ◽  
Gang He ◽  
Jianguo Lv ◽  
Elvira Fortunato ◽  
Rodrigo Martins
Keyword(s):  
Thin Film ◽  
Flexible Electronics ◽  
Thin Film Transistors ◽  
High Performance ◽  
Gate Dielectrics ◽  
Low Cost ◽  
Oxide Thin Film ◽  
Viable Option ◽  
High K ◽  
Indium Oxide Thin Film

Solution based deposition has been recently considered as a viable option for low-cost flexible electronics.

Solution-processed p-type copper oxide thin-film transistors fabricated by using a one-step vacuum annealing technique

2015 ◽  
Vol 3 (37) ◽  
pp. 9509-9513 ◽  
Author(s):  
Jianmin Yu ◽  
Guoxia Liu ◽  
Ao Liu ◽  
You Meng ◽  
Byoungchul Shin ◽  
...  
Keyword(s):  
Thin Film ◽  
Copper Oxide ◽  
Thin Film Transistors ◽  
High Performance ◽  
Vacuum Annealing ◽  
Solution Process ◽  
Oxide Thin Film ◽  
One Step ◽  
P Type ◽  
Copper Oxide Thin Film

High-performance p-type CuxO TFTs were fabricated by a solution process and annealed at various temperatures under vacuum.

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