Pentacene-based thin film transistors with titanium oxide-polystyrene/polystyrene insulator blends: High mobility on high K dielectric films

2007 ◽  
Vol 90 (6) ◽  
pp. 062111 ◽  
Author(s):  
Cecile Jung ◽  
Ashok Maliakal ◽  
Alexander Sidorenko ◽  
Theo Siegrist
Keyword(s):  
Thin Film ◽  
Titanium Oxide ◽  
Thin Film Transistors ◽  
High Mobility ◽  
Dielectric Films ◽  
High K ◽  
High K Dielectric

High-mobility p-type NiOx thin-film transistors processed at low temperatures with Al2O3 high-k dielectric

2016 ◽  
Vol 4 (40) ◽  
pp. 9438-9444 ◽  
Author(s):  
Fukai Shan ◽  
Ao Liu ◽  
Huihui Zhu ◽  
Weijin Kong ◽  
Jingquan Liu ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperatures ◽  
Thin Film Transistors ◽  
High Performance ◽  
Low Cost ◽  
Solution Process ◽  
High Mobility ◽  
High K ◽  
High K Dielectric ◽  
P Type

High-performance p-type NiOx thin-film transistors are fabricated via a low-cost solution process and exhibit a high mobility of around 15 cm2 V−1 s−1.

High Mobility ZnO thin film transistors using the novel deposition of high-k dielectrics

2011 ◽  
Vol 1315 ◽  
Author(s):  
D. K. Ngwashi ◽  
R. B. M. Cross ◽  
S. Paul ◽  
Andrian P. Milanov ◽  
Anjana Devi
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Performance Metrics ◽  
Chemical Vapour ◽  
High Mobility ◽  
Hafnium Dioxide ◽  
Organic Chemical ◽  
Channel Mobility ◽  
High K ◽  
Metal Organic

ABSTRACTIn order to investigate the performance of ZnO-based thin film transistors (ZnO-TFTs), we fabricate devices using amorphous hafnium dioxide (HfO2) high-k dielectrics. Sputtered ZnO was used as the active channel layer, and aluminium source/drain electrodes were deposited by thermal evaporation, and the HfO2 high-k dielectrics are deposited by metal-organic chemical vapour deposition (MOCVD). The ZnO-TFTs with high-k HfO2 gate insulators exhibit good performance metrics and effective channel mobility which is appreciably higher in comparison to SiO2-based ZnO TFTs fabricated under similar conditions. The average channel mobility, turn-on voltage, on-off current ratio and subthreshold swing of the high-k TFTs are 31.2 cm2V-1s-1, -4.7 V, ~103, and 2.4 V/dec respectively. We compared the characteristics of a typical device consisting of HfO2 to those of a device consisting of thermally grown SiO2 to examine their potential for use as high-k dielectrics in future TFT devices.

EHD-jet patterned MoS2 on a high-k dielectric for high mobility in thin film transistor applications

2021 ◽  
Vol 32 (24) ◽  
pp. 245710
Author(s):  
Thi Thu Thuy Can ◽  
Hak-Lim Ko ◽  
Woon-Seop Choi
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
High Mobility ◽  
High K ◽  
High K Dielectric

Organic thin film transistors with polymer high-k dielectric insulator

2006 ◽  
Vol 26 (5-7) ◽  
pp. 1028-1031 ◽  
Author(s):  
Klaus Müller ◽  
Ioanna Paloumpa ◽  
Karsten Henkel ◽  
Dieter Schmeißer
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
High K ◽  
High K Dielectric

Low-temperature supercritical dehydroxylation for achieving an ultra-low subthreshold swing of thin-film transistors

Nanoscale ◽  
2021 ◽  
Author(s):  
Kuan-Chang Chang ◽  
Luodan Hu ◽  
Kang Qi ◽  
Lei Li ◽  
Xinnan Lin ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Double Layer ◽  
Thin Film Transistors ◽  
Subthreshold Swing ◽  
Dielectric Thin Film ◽  
High K ◽  
High K Dielectric

Ultra-low subthreshold swing was achieved in fabricated double-layer high-k dielectric thin-film transistors by means of low temperature supercritical dehydroxylation methodology.

Low-voltage high-mobility pentacene thin-film transistors with polymer/high-k oxide double gate dielectrics

2006 ◽  
Vol 88 (24) ◽  
pp. 243513 ◽  
Author(s):  
D. K. Hwang ◽  
Kimoon Lee ◽  
Jae Hoon Kim ◽  
Seongil Im ◽  
Chang Su Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Low Voltage ◽  
Gate Dielectrics ◽  
High Mobility ◽  
Double Gate ◽  
High K

scholarly journals Pentacene based thin film transistors with high-k dielectric Nd2O3 as a gate insulator

2010 ◽  
Vol 40 (3) ◽  
pp. 357-360 ◽  
Author(s):  
R. Sarma ◽  
D. Saikia ◽  
Puja Saikia ◽  
P.K. Saikia ◽  
B. Baishya
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Gate Insulator ◽  
High K ◽  
High K Dielectric
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