Low temperature and high performance ZnSnO thin film transistors engineered by in-situ thermal manipulation

2022 ◽  
Author(s):  
Wengao Pan ◽  
Xiaoliang Zhou ◽  
Qingping Lin ◽  
Jie Chen ◽  
Lei Lu ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
High Performance ◽  
Low Cost ◽  
High Mobility ◽  
Processing Temperature ◽  
Practical Application ◽  
Thermal Manipulation

Thin film transistors (TFT) with low cost, high mobility and low processing temperature are key enablers for practical application, which are always contradictory. In this work, we achieved high performance...

Fast grown self-assembled polythiophene/graphene oxide nanocomposite thin films at air–liquid interface with high mobility used in polymer thin film transistors

2018 ◽  
Vol 6 (37) ◽  
pp. 9981-9989 ◽  
Author(s):  
Nikhil Nikhil ◽  
Rajiv K. Pandey ◽  
Praveen Kumar Sahu ◽  
Manish Kumar Singh ◽  
Rajiv Prakash
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thin Film Transistors ◽  
High Performance ◽  
Electronic Device ◽  
High Mobility ◽  
Practical Application ◽  
Polymer Thin Film ◽  
Nanocomposite Thin Films ◽  
Air Liquid Interface

Successful practical application of a polymer or its nanocomposite depends on the ability to produce a high performance electronic device at a significantly lesser cost and time than those needed to manufacture conventional devices.

Low-cost lithographically patterned source/drain bottom contacts for high mobility p-type organic thin film transistors

2012 ◽  
Vol 1435 ◽  
Author(s):  
Robert Mueller ◽  
Steve Smout ◽  
Myriam Willegems ◽  
Jan Genoe ◽  
Paul Heremans
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Low Cost ◽  
High Mobility ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Short Channel ◽  
Bottom Contact ◽  
Gold Metallization

ABSTRACTShort channel organic thin film transistors in bottom-gate, bottom contact configuration use typically gold metallization for the source and drain contacts because this metal can easily be cleaned from photoresist residuals by oxygen plasma or ultraviolet-ozone and allows also surface modification by self-assembled monolayers (e.g. thiols). Alternative low-cost bottom contact metallization for high performance short-channel organic thin film transistors are scarce because of the incompatibility of the bottom contact material with the cleaning step. In this work a new process flow, involving a temporary thin aluminum protection layer, is presented. Short channel (3.4 μm) pentacene transistors with lithographical defined and thiol modified silver source/drain bottom contacts (25 nm thick, on a 2 nm titanium adhesion layer) prepared according to this process achieved a saturation mobility of 0.316 cm2/(V.s), and this at a metal cost below 1% of the standard 30 nm thick gold metallization.

Progress and challenges in p-type oxide-based thin film transistors

2019 ◽  
Vol 8 (1) ◽  
pp. 422-443 ◽  
Author(s):  
Zong-Wei Shang ◽  
Hsiao-Hsuan Hsu ◽  
Zhi-Wei Zheng ◽  
Chun-Hu Cheng
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
High Mobility ◽  
Processing Temperature ◽  
Flat Panel Display ◽  
Device Structure ◽  
Good Transparency ◽  
P Type ◽  
Oxide Tfts

Abstract Transparent electronics has attracted much attention and been widely studied for next-generation high-performance flat-panel display application in the past few years, because of its excellent electrical properties. In display application, thin film transistors (TFTs) play an important role as the basic units by controlling the pixels. Among them, oxide-based TFTs have become promising candidates and gradually replaced the conventional amorphous and polycrystalline silicon TFTs, due to high mobility, good transparency, excellent uniformity and low processing temperature. Even though n-type oxide TFTs have shown high device performance and been used in commercial display application, p-type oxide TFTs with the equal performance have been rarely reported. Hence, in this paper, recent progress and challenges in p-type oxide-based TFTs are reviewed. After a short introduction, the TFT device structure and operation are presented. Then, recent developments in p-type oxide TFTs are discussed in detail, with the emphasis on the potential p-type oxide candidates as copper oxide, tin oxide and nickel oxide. Moreover, miscellaneous applications of p-type oxide TFTs are also presented. Despite this, the performance of p-type oxide TFTs still lags behind, as compared with that of n-type counterparts. Thus, the current issues and challenges of p-type oxide TFTs are briefly discussed.

High-mobility p-type NiOx thin-film transistors processed at low temperatures with Al2O3 high-k dielectric

2016 ◽  
Vol 4 (40) ◽  
pp. 9438-9444 ◽  
Author(s):  
Fukai Shan ◽  
Ao Liu ◽  
Huihui Zhu ◽  
Weijin Kong ◽  
Jingquan Liu ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperatures ◽  
Thin Film Transistors ◽  
High Performance ◽  
Low Cost ◽  
Solution Process ◽  
High Mobility ◽  
High K ◽  
High K Dielectric ◽  
P Type

High-performance p-type NiOx thin-film transistors are fabricated via a low-cost solution process and exhibit a high mobility of around 15 cm2 V−1 s−1.

In situ modification of low-cost Cu electrodes for high-performance low-voltage pentacene thin film transistors (TFTs)

2013 ◽  
Vol 14 (3) ◽  
pp. 775-781 ◽  
Author(s):  
Yaorong Su ◽  
Mingdong Wang ◽  
Fangyan Xie ◽  
Jian Chen ◽  
Weiguang Xie ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Low Voltage ◽  
Low Cost ◽  
In Situ Modification

High-Mobility Amorphous InGaZnO Thin-Film Transistors With Nitrogen Introduced via Low-Temperature Annealing

2021 ◽  
Vol 42 (10) ◽  
pp. 1480-1483
Author(s):  
Yining Yu ◽  
Nannan Lv ◽  
Dongli Zhang ◽  
Yiran Wei ◽  
Mingxiang Wang
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
High Mobility ◽  
Low Temperature Annealing ◽  
Amorphous Ingazno
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