Solution-Processed La Alloyed ZrOx High-k Dielectric for High-Performance ZnO Thin-Film Transistors

2020 ◽  
pp. 1-1 ◽  
Author(s):  
Md Mobaidul Islam ◽  
Jewel Kumer Saha ◽  
Ravindra Naik Bukke ◽  
Md Mehedi Hasan ◽  
Mohammad Masum Billah ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Zno Thin Film ◽  
Solution Processed ◽  
High K ◽  
High K Dielectric

High Performance Amorphous In–Ga–Zn–O Thin-Film Transistors with Low Temperature High-k Solution Processed Hybrid Gate Insulator

2020 ◽  
Vol 9 (2) ◽  
pp. 025002
Author(s):  
Ployrung Kesorn ◽  
Juan Paolo Bermundo ◽  
Toshiaki Nonaka ◽  
Mami N. Fujii ◽  
Yasuaki Ishikawa ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
High Performance ◽  
Gate Insulator ◽  
Solution Processed ◽  
High K

High Performance Aluminum-Doped ZnO Thin Film Transistors with High-K Gate Dielectrics Fabricated at Low Temperature

2013 ◽  
Vol 11 (8) ◽  
pp. 1509-1512 ◽  
Author(s):  
Dedong Han ◽  
Jian Cai ◽  
Wei Wang ◽  
Liangliang Wang ◽  
Yi Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
High Performance ◽  
Gate Dielectrics ◽  
Zno Thin Film ◽  
High K ◽  
Doped Zno

High-mobility p-type NiOx thin-film transistors processed at low temperatures with Al2O3 high-k dielectric

2016 ◽  
Vol 4 (40) ◽  
pp. 9438-9444 ◽  
Author(s):  
Fukai Shan ◽  
Ao Liu ◽  
Huihui Zhu ◽  
Weijin Kong ◽  
Jingquan Liu ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperatures ◽  
Thin Film Transistors ◽  
High Performance ◽  
Low Cost ◽  
Solution Process ◽  
High Mobility ◽  
High K ◽  
High K Dielectric ◽  
P Type

High-performance p-type NiOx thin-film transistors are fabricated via a low-cost solution process and exhibit a high mobility of around 15 cm2 V−1 s−1.

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