Solution based deposition has been recently considered as a viable option for low-cost flexible electronics.
Facile patterning of chloride-based precursor films for low-temperature, high performance indium oxide thin-film transistors.
In this study, we fabricate amorphous indium oxide thin film transistors (TFTs) on a display glass substrate at various annealing temperatures from 200 °C to 300 °C.
Fully solution-induced high performance indium oxide thin film transistors with ZrOx high-k gate dielectrics