Dry etching and residue removal of functional polymer mixed with TiO2 microparticles via inductively coupled CF4/O2 plasma and ultrasonic-treated acetone for humidity sensor application

RSC Advances ◽  
2016 ◽  
Vol 6 (47) ◽  
pp. 41580-41586 ◽  
Author(s):  
Ming-Qing Liu ◽  
Cong Wang ◽  
Zhao Yao ◽  
Nam-Young Kim
Keyword(s):  
Humidity Sensor ◽  
Dry Etching ◽  
Functional Polymer ◽  
Removal Method ◽  
Sensor Application ◽  
Inductively Coupled ◽  
Residue Removal ◽  
O2 Plasma ◽  
Icp Dry Etching

An ICP dry etching and residue removal method of functional polymer mixed with TiO2 microparticles using for humidity sensor application.

scholarly journals ICP Dry Etching of III-V Nitrides

1997 ◽  
Vol 468 ◽  
Author(s):  
C. B. Vartuli ◽  
J. W. Lee ◽  
J. D. MacKenzie ◽  
S. M. Donovan ◽  
C. R. Abernathy ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Inductively Coupled Plasma ◽  
Dry Etching ◽  
Rf Power ◽  
Inductively Coupled Plasma Etching ◽  
Inductively Coupled ◽  
Dc Bias ◽  
Etch Rates ◽  
Icp Dry Etching

ABSTRACTInductively coupled plasma etching of GaN, AlN, InN, InGaN and InAlN was investigated in CH4/H2/Ar plasmas as a function of dc bias, and ICP power. The etch rates were generally quite low, as is common for III-nitrides in CH4 based chemistries. The etch rates increased with increasing dc bias. At low rf power (150W), the etch rates increased with increasing ICP power, while at 350W rf power, a peak was found between 500 and 750 W ICP power. The etched surfaces were found to be smooth, while selectivities of etch were ≤ 6 for InN over GaN, AlN, InGaN and InAlN under all conditions.

Low Bias Voltage Dry Etching of InP by Inductively Coupled Plasma Using SiCl4/Ar

1998 ◽  
Vol 37 (Part 1, No. 12A) ◽  
pp. 6655-6656 ◽  
Author(s):  
Akihiro Matsutani ◽  
Fumio Koyama ◽  
Kenichi Iga
Keyword(s):  
Bias Voltage ◽  
Inductively Coupled Plasma ◽  
Dry Etching ◽  
Inductively Coupled

Angled stripe InGaAsP/InP SLED fabricated by low-damage inductively coupled plasma dry etching

2004 ◽  
Author(s):  
Jun Zhang ◽  
Xiaodong Huang ◽  
Jin Chang ◽  
Yingjun Liu ◽  
Yi Gan ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Dry Etching ◽  
Inductively Coupled

Dry Etching of TaN/HfO2Gate Stack Structure by Cl2/SF6/Ar Inductively Coupled Plasma

2005 ◽  
Vol 44 (7B) ◽  
pp. 5811-5818 ◽  
Author(s):  
Myoung Hun Shin ◽  
Sung-Woong Na ◽  
Nae-Eung Lee ◽  
Tae Kwan Oh ◽  
Jiyoung Kim ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Dry Etching ◽  
Inductively Coupled
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