Inductively coupled plasma (ICP) dry etching of type II InAs/GaSb superlattice for focal plane arrays

Author(s):  
Fei Tao ◽  
Xubo Zhu ◽  
JinChun WANG ◽  
Yingjie He ◽  
Jiaxin Ding ◽  
...  
1997 ◽  
Vol 468 ◽  
Author(s):  
C. B. Vartuli ◽  
J. W. Lee ◽  
J. D. MacKenzie ◽  
S. M. Donovan ◽  
C. R. Abernathy ◽  
...  

ABSTRACTInductively coupled plasma etching of GaN, AlN, InN, InGaN and InAlN was investigated in CH4/H2/Ar plasmas as a function of dc bias, and ICP power. The etch rates were generally quite low, as is common for III-nitrides in CH4 based chemistries. The etch rates increased with increasing dc bias. At low rf power (150W), the etch rates increased with increasing ICP power, while at 350W rf power, a peak was found between 500 and 750 W ICP power. The etched surfaces were found to be smooth, while selectivities of etch were ≤ 6 for InN over GaN, AlN, InGaN and InAlN under all conditions.


2019 ◽  
Vol 55 (4) ◽  
pp. 1-5 ◽  
Author(s):  
Fikri Oguz ◽  
Yetkin Arslan ◽  
Erkin Ulker ◽  
Alpan Bek ◽  
Ekmel Ozbay

1998 ◽  
Vol 37 (Part 1, No. 12A) ◽  
pp. 6655-6656 ◽  
Author(s):  
Akihiro Matsutani ◽  
Fumio Koyama ◽  
Kenichi Iga

2004 ◽  
Author(s):  
Jun Zhang ◽  
Xiaodong Huang ◽  
Jin Chang ◽  
Yingjun Liu ◽  
Yi Gan ◽  
...  

2005 ◽  
Vol 44 (7B) ◽  
pp. 5811-5818 ◽  
Author(s):  
Myoung Hun Shin ◽  
Sung-Woong Na ◽  
Nae-Eung Lee ◽  
Tae Kwan Oh ◽  
Jiyoung Kim ◽  
...  

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