One step synthesis of Au nanoparticle-cyclized polyacrylonitrile composite films and their use in organic nano-floating gate memory applications

2016 ◽  
Vol 4 (7) ◽  
pp. 1511-1516 ◽  
Author(s):  
Se-Phin Cho ◽  
Sukjae Jang ◽  
Hae-Na Jo ◽  
Sang-A Lee ◽  
Sukang Bae ◽  
...  
Keyword(s):  
Thin Films ◽  
Au Nanoparticles ◽  
Solid Phase ◽  
Composite Films ◽  
Annealing Process ◽  
Floating Gate ◽  
Au Nanoparticle ◽  
Floating Gate Memory ◽  
One Step ◽  
Memory Applications

In this study, we synthesized Au nanoparticles (AuNPs) in polyacrylonitrile (PAN) thin films using a simple annealing process in the solid phase.

Non-epitaxial, Highly Textured (001) CoPt:B2O3 Composite Films for Perpendicular Recording

2002 ◽  
Vol 721 ◽  
Author(s):  
M. L. Yan ◽  
N. Powers ◽  
D. J. Sellmyer
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Epitaxial Growth ◽  
Thermal Processing ◽  
Composite Films ◽  
Annealing Process ◽  
Perpendicular Anisotropy ◽  
Perpendicular Recording ◽  
Nanocomposite Thin Films ◽  
Deposited Films

AbstractWe report the non-epitaxial growth of highly textured (001) CoPt:B2O3 nanocomposite thin films that are deposited directly on thermally-oxidized Si wafers. Multilayers of Co/Pt/Co/B2O3 are deposited followed by appropriate thermal processing. The as-deposited films are disordered fcc CoPt phase, and magnetically soft. After annealing, an (001) orientation of CoPt-ordered grains is developed. The texture development is dependent both on the total film thickness and the annealing process. Nearly perfect (001) texture can be obtained in films with thinner initial layer thicknesses. Strong perpendicular anisotropy is shown to be related to this (001) texture.

Well-ordered nanoparticle arrays for floating gate memory applications

2020 ◽  
Vol 31 (21) ◽  
pp. 215203
Author(s):  
Furkan Kuruoğlu ◽  
Murat Çalışkan ◽  
Merih Serin ◽  
Ayşe Erol
Keyword(s):  
Floating Gate ◽  
Nanoparticle Arrays ◽  
Floating Gate Memory ◽  
Memory Applications

Performance of Direct Tunneling Floating Gate Memory with Medium-κ Dielectrics for Embedded-Random-Access Memory Applications

2006 ◽  
Vol 45 (4B) ◽  
pp. 3170-3175
Author(s):  
Bogdan Govoreanu ◽  
Robin Degraeve ◽  
Thomas Kauerauf ◽  
Wim Magnus ◽  
Dirk Wellekens ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Floating Gate ◽  
Access Memory ◽  
Direct Tunneling ◽  
Floating Gate Memory ◽  
Memory Applications

High-k dielectrics for hybrid floating gate memory applications

2012 ◽  
Vol 1430 ◽  
Author(s):  
J.G. Lisoni ◽  
L. Breuil ◽  
P. Blomme ◽  
J. Van Houdt
Keyword(s):  
Dielectric Constant ◽  
Metal Layer ◽  
Device Fabrication ◽  
Floating Gate ◽  
High K ◽  
Interface Characteristics ◽  
Floating Gate Memory ◽  
Memory Applications ◽  
Intermetal Dielectric ◽  
Metal Layers

ABSTRACTWe report on the materials issues involved in the hybrid floating gate (HFG) device fabrication, where the interpoly dielectric is replaced by an intermetal dielectric (IMD). Indeed, in HFG the dielectric is inserted in between two metal layers in a metal\dielectric\metal stack. The materials of choice were TiN as the metal layer and Al2O3 and HfO2 (and their combination) as IMD. The program/erase performance is discussed based on the dielectric constant and crystallinity of the IMD and the metal-IMD interface characteristics.

Fabrication of heteroepitaxial thin films of layered oxychalcogenides LnCuOCh (Ln = La–Nd; Ch = S–Te) by reactive solid-phase epitaxy

2004 ◽  
Vol 19 (7) ◽  
pp. 2137-2143 ◽  
Author(s):  
Hidenori Hiramatsu ◽  
Kazushige Ueda ◽  
Kouhei Takafuji ◽  
Hiromichi Ohta ◽  
Masahiro Hirano ◽  
...  
Keyword(s):  
Thin Films ◽  
Solid Phase ◽  
Epitaxial Films ◽  
Annealing Process ◽  
Epitaxial Thin Films ◽  
Solid Phase Epitaxy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Preparation Conditions ◽  
Thermal Annealing Process

Processes and preparation conditions for growing epitaxial thin films of Cu-based, layered oxychalcogenides LnCuOCh (Ln = La, Ce, Pr or Nd; Ch = S1-xSex or Se1-yTey) are reported. Epitaxial thin films on MgO (001) substrates were prepared by a reactive solid-phase epitaxy method. Four-axes high-resolution x-ray diffraction measurements revealed that the crystallographic orientation is (001)[110] LnCuOCh || (001)[110] MgO and the internal stress of the crystalline lattices in the films are relaxed during thermal-annealing process of the reactive solid-phase epitaxy. Furthermore, except for CeCuOS, systematic variations in the lattice constant by chalcogen or lanthanide ion substitutions were observed. These results demonstrated that the reactive solid-phase epitaxy is an efficient technique for fabricating LnCuOCh epitaxial films.

CVD Growth and Passivation of W and TiN Nanocrystals for Non-volatile Memory Applications

2010 ◽  
Vol 1250 ◽  
Author(s):  
Guillaume Gay ◽  
Djamel Belhachemi ◽  
Jean-Philippe Colonna ◽  
Stéphane Minoret ◽  
Arnaud Beaurain ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Charge Trapping ◽  
Floating Gate ◽  
Chemical Vapor Deposition Growth ◽  
Floating Gate Memory ◽  
Non Volatile Memory ◽  
Cvd Growth ◽  
Memory Applications

AbstractIn this paper, we present CVD (Chemical Vapor Deposition) growth and passivation of tungsten (W) and titanium nitride (TiN) nanocrystals (NCs) on silicon dioxide and silicon nitride for use as charge trapping layer in floating gate memory devices. NCs are deposited in an 8 inches industrial CVD Centura tool. W and TiN are chosen for being compatible with MOSFET memory fabrication process. For protecting NCs from oxidation, a silicon shell is selectively deposited on them. Moreover, for a better passivation, TiN NCs are encapsulated in silicon nitride (Si3N4) in order to get rid of oxidation issues. After high temperature annealing (1050°C under N2 during 1 minute) XPS measurements point out that NCs are still metallic, which makes them good candidates for being used as charge trapping layer in floating gate memories.

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