Thin films of ZrO2 were deposited from aqueous solution on Si(100) substrates precovered by functionalized alkyltrichlorosilane self-assembled monolayers (SAMs). The interface structure, thermal stability, and densification of these films in the temperature range from room temperature to 750 °C in vacuum were measured using in situ x-ray reflectivity. The growth rate is a nonlinear function of time in solution, with a pronounced nonuniformity during the first 30 min. The as-deposited films exhibit about 3-nm roughness and a density below that of bulk ZrO2. Measurements in vacuum reveal decreasing film thickness, increasing film density, and decreasing roughness upon annealing up to 750 °C. The densification saturates at the highest measured temperatures, presumably following evaporation of residual contaminants from the aqueous synthesis procedure. Above 200 °C the SAM/ZrO2 interface began to deteriorate, possibly due to interdiffusion. The ZrO2 film structure obtained at the highest annealing temperatures persisted upon cooling to room temperature, and there was no visible evidence of stress-induced microstructural changes, such as peeling or cracking.
Room temperature magnetoresistance properties in self-assembled epitaxial La0.7Sr0.3MnO3:NiO nanocomposite thin films