scholarly journals Processing and Study of Optical and Electrical Properties of (Mg, Al) Co-Doped ZnO Thin Films Prepared by RF Magnetron Sputtering for Photovoltaic Application

Materials ◽  
2020 ◽  
Vol 13 (9) ◽  
pp. 2146 ◽  
Author(s):  
Chayma Abed ◽  
Susana Fernández ◽  
Selma Aouida ◽  
Habib Elhouichet ◽  
Fernando Priego ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Band Gap ◽  
Rf Magnetron Sputtering ◽  
Band Gap Energy ◽  
Thin Layers ◽  
Working Pressure ◽  
Hall Effect Measurements ◽  
Diffraction Patterns

In this study, high transparent thin films were prepared by radio frequency (RF) magnetron sputtering from a conventional solid state target based on ZnO:MgO:Al2O3 (10:2 wt %) material. The films were deposited on glass and silicon substrates at the different working pressures of 0.21, 0.61, 0.83 and 1 Pa, 300 °C and 250 W of power. X-ray diffraction patterns (XRD), atomic force microscopy (AFM), UV-vis absorption and Hall effect measurements were used to evaluate the structural, optical, morphological and electrical properties of thin films as a function of the working pressure. The optical properties of the films, such as the refractive index, the extinction coefficient and the band gap energy were systematically studied. The optical band gap of thin films was estimated from the calculated absorption coefficient. That parameter, ranged from 3.921 to 3.655 eV, was hardly influenced by the working pressure. On the other hand, the lowest resistivity of 8.8 × 10−2 Ω cm−1 was achieved by the sample deposited at the lowest working pressure of 0.21 Pa. This film exhibited the best optoelectronic properties. All these data revealed that the prepared thin layers would offer a good capability to be used in photovoltaic applications.

Structure and Optical Properties of ZnO Thin Film Preparation Using RF Magnetron Sputtering

2010 ◽  
Vol 663-665 ◽  
pp. 377-380
Author(s):  
Shan Yu Quan ◽  
Lin Mei Yang ◽  
Cong Liu ◽  
Xu Dong Zhang
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Band Gap ◽  
Optical Band Gap ◽  
Rf Magnetron Sputtering ◽  
Band Gap Energy ◽  
Gas Pressure ◽  
Visible Range ◽  
Zno Films ◽  
Ar Gas

The aim of this study is to obtain high-quality zinc oxide thin films by reactive radiofrequency (rf) magnetron sputtering. The thin films were prepared at constant total gas pressure, with different oxygen and argon contents. The ZnO samples were characterized by several methods. From XRD measurements it was confirmed that ZnO films are c-axis oriented, the line width and intensity are sensitive to O2/Ar gas pressure. All films exhibited excellent transmission (in excess of 70 %) in the visible range with a steep fall off in transmission at 425 nm. From the absorbance measurements the optical band-gap energy was extrapolated according the transmission spectrum. It shows that the optical band gap of the films increased from 3.233 eV to 3.288 eV with increase in the oxygen concentrations from 20 % to 70 %. Refractive indexes of the obtained thin films were carried out in this study.

Investigation of band gap energy versus temperature for SnS2 thin films grown by RF-magnetron sputtering

2020 ◽  
Vol 591 ◽  
pp. 412264 ◽  
Author(s):  
M. Isik ◽  
H.H. Gullu ◽  
M. Terlemezoglu ◽  
O. Bayrakli Surucu ◽  
M. Parlak ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Band Gap ◽  
Rf Magnetron Sputtering ◽  
Band Gap Energy ◽  
Gap Energy

PHOTOREFLECTANCE STUDY OF AIN THIN FILMS GROWN BY REACTIVE GAS-TIMING RF MAGNETRON SPUTTERING

2002 ◽  
Vol 16 (28n29) ◽  
pp. 4418-4422 ◽  
Author(s):  
N. KIETIPAISALSOPHON ◽  
W. BUNJONGPRU ◽  
J. NUKEAW
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Band Gap ◽  
Flow Rate ◽  
Rf Magnetron Sputtering ◽  
Band Gap Energy ◽  
Transition Energies ◽  
Gap Energy ◽  
Xrd Patterns ◽  
Reactive Gas

Band-gap energy of AIN thin films was investigated by room-temperature photoreflectance (PR) spectroscopy. Using rf magnetron sputtering, the reactive gas-timing technique was successfully applied to grow cubic-AIN thin films. The define XRD patterns of all deposited films show orientation of cubic structure in (111) and (200) planes. The PR spectra clearly exhibit a band-gap energy of cubic-AIN depending on the flow rate of N 2 gas. The band-gap transition energies were determined by fitting the PR spectra to theoretical line-shape expression. The band-gap transition energies decreased with increasing flow rate of N 2.

Single Crystal, High Band Gap CdS Thin Films Grown by RF Magnetron Sputtering in Argon Atmosphere for Solar Cell Applications

2018 ◽  
Vol 10 (3) ◽  
pp. 03005-1-03005-6 ◽  
Author(s):  
Rupali Kulkarni ◽  
◽  
Amit Pawbake ◽  
Ravindra Waykar ◽  
Ashok Jadhawar ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Magnetron Sputtering ◽  
Single Crystal ◽  
Band Gap ◽  
Rf Magnetron Sputtering ◽  
Argon Atmosphere ◽  
Cds Thin Films ◽  
High Band

scholarly journals Fabrication and Testing of All-solid-state Nanoscale Lithium Batteries Using LiPON for Electrolytes

2018 ◽  
Vol 53 ◽  
pp. 01008
Author(s):  
Feihu Tan ◽  
XiaoPing Liang ◽  
Feng Wei ◽  
Jun Du
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solid State ◽  
Magnetron Sputtering ◽  
Specific Capacity ◽  
Rf Magnetron Sputtering ◽  
Open Circuit ◽  
Working Pressure ◽  
Thin Film Battery ◽  
A Current

The amorphous LiPON thin film was obtained by using the crystalline Li3PO4 target and the RF magnetron sputtering method at a N2 working pressure of 1 Pa. and then the morphology and composition of LiPON thin films are analysed by SEM and EDS. SEM shows that the film was compact and smooth, while EDS shows that the content of N in LiPON thin film was about 17.47%. The electrochemical properties of Pt/LiPON/Pt were analysed by EIS, and the ionic conductivity of LiPON thin films was 3.8×10-7 S/cm. By using the hard mask in the magnetron sputtering process, the all-solid-state thin film battery with Si/Ti/Pt/LiCoO2/LiPON/Li4Ti5O12/Pt structure was prepared, and its electrical properties were studied. As for this thin film battery, the open circuit voltage was 1.9 V and the first discharge specific capacity was 34.7 μAh/cm2·μm at a current density of 5 μA/cm-2, indicating that is promising in all-solidstate thin film batteries.

scholarly journals Residual Oxygen Effects on the Properties of MoS2 Thin Films Deposited at Different Temperatures by Magnetron Sputtering

Crystals ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 1183
Author(s):  
Peiyu Wang ◽  
Xin Wang ◽  
Fengyin Tan ◽  
Ronghua Zhang
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Deposition Rate ◽  
Deposition Temperature ◽  
Energy Dispersive Spectrometer ◽  
Rf Magnetron Sputtering ◽  
Glass Substrates ◽  
Different Temperatures ◽  
Oxygen Atoms

Molybdenum disulfide (MoS2) thin films were deposited at different temperatures (150 °C, 225 °C, 300 °C, 375 °C, and 450 °C) on quartz glass substrates and silicon substrates using the RF magnetron sputtering method. The influence of deposition temperature on the structural, optical, electrical properties and deposition rate of the obtained thin films was investigated by X-ray diffraction (XRD), Energy Dispersive Spectrometer (EDS), Raman, absorption and transmission spectroscopies, a resistivity-measuring instrument with the four-probe method, and a step profiler. It was found that the MoS2 thin films deposited at the temperatures of 150 °C, 225 °C, and 300 °C were of polycrystalline with a (101) preferred orientation. With increasing deposition temperatures from 150 °C to 300 °C, the crystallization quality of the MoS2 thin films was improved, the Raman vibrational modes were strengthened, the deposition rate decreased, and the optical transmission and bandgap increased. When the deposition temperature increased to above 375 °C, the molecular atoms were partially combined with oxygen atoms to form MoO3 thin film, which caused significant changes in the structural, optical, and electrical properties of the obtained thin films. Therefore, it was necessary to control the deposition temperature and reduce the contamination of oxygen atoms throughout the magnetron sputtering process.

Silicon Germanium Oxide (SixGeyO1-x-y) Infrared Sensitive Material for Uncooled Detectors

2010 ◽  
Vol 1245 ◽  
Author(s):  
Reza Anvari ◽  
Qi Cheng ◽  
Muhammad Lutful Hai ◽  
Truc Phan Bui ◽  
A. J. Syllaios ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Silicon Germanium ◽  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
Germanium Oxide ◽  
Temperature Coefficient Of Resistance ◽  
Sensitive Material

AbstractThis paper presents the formation and the characterization of silicon germanium oxide (SixGeyO1-x-y) infrared sensitive material for uncooled microbolometers. RF magnetron sputtering was used to simultaneously deposit Si and Ge thin films in an Ar/O2 environment at room temperature. The effects of varying Si and O composition on the thin film's electrical properties which include temperature coefficient of resistance (TCR) and resistivity were investigated. The highest achieved TCR and the corresponding resistivity at room temperature were -5.41 %/K and 3.16×103 ohm cm using Si0.039Ge0.875O0.086 for films deposited at room temperature.

RF Magnetron Sputtering Processed Transparent Conductive Aluminum Doped ZnO thin Films with Excellent Optical and Electrical Properties

2021 ◽  
Author(s):  
Chunhu Zhao ◽  
Junfeng Liu ◽  
Yixin Guo ◽  
Yanlin Pan ◽  
Xiaobo Hu ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Carrier Concentration ◽  
Rf Magnetron Sputtering ◽  
Zno Thin Films ◽  
Band Model ◽  
Deposition Condition ◽  
Optical And Electrical Properties ◽  
Doped Zno

Abstract Aluminum doped ZnO thin films (AZO), which simultaneously transmit light and conduct electrical current, are widely applied in photovoltaic devices. To achieve high performance AZO thin films, the effects of RF magnetron sputtering conditions on the optical and electrical properties of the films has been explored. The optimized AZO thin films exhibit strong (002) orientated growth with hexagonal wurtzite structure. The minimum resistivity of 0.9Í10-3 Ω·cm, the highest carrier concentration of 2.8Í1020 cm-3, the best Hall mobility of 22.8 cm2·(V·s)-1 and average transmittance above 85% can be achieved at the optimum deposition condition of 0.2 Pa, 120 W and 200 °C. Considering the single parabolic band model, the bandgap shift by carrier concentration of the films can be attributed to the Burstein-Moss effect. The results indicate that RF magnetron sputtered AZO thin films are promising for solar cell applications relying on front contact layers.

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