scholarly journals Band-gap tuning at the strong quantum confinement regime in magnetic semiconductor EuS thin films

2012 ◽  
Vol 100 (21) ◽  
pp. 211910 ◽  
Author(s):  
Panagiotis Poulopoulos ◽  
Björn Lewitz ◽  
Andreas Straub ◽  
Spiridon D. Pappas ◽  
Sotirios A. Droulias ◽  
...  
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Quantum Confinement ◽  
Magnetic Semiconductor ◽  
Band Gap Tuning

Effect of silver incorporation in phase formation and band gap tuning of tungsten oxide thin films

2012 ◽  
Vol 112 (11) ◽  
pp. 114311 ◽  
Author(s):  
R. Jolly Bose ◽  
R. Vinod Kumar ◽  
S. K. Sudheer ◽  
V. R. Reddy ◽  
V. Ganesan ◽  
...  
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Tungsten Oxide ◽  
Phase Formation ◽  
Oxide Thin Films ◽  
Tungsten Oxide Thin Films ◽  
Band Gap Tuning

Structure and band gap tuning of transparent (Ba 1−x Sr x )SnO 3 thin films epitaxially grown on MgO substrates

2012 ◽  
Vol 98 (4) ◽  
pp. 47010 ◽  
Author(s):  
Qinzhuang Liu ◽  
Bing Li ◽  
Jianjun Liu ◽  
Hong Li ◽  
Zhongliang Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Band Gap Tuning

scholarly journals Electrochemically deposited nanocrystalline InSb thin films and their electrical properties

2016 ◽  
Vol 4 (6) ◽  
pp. 1345-1350 ◽  
Author(s):  
K. E. Hnida ◽  
S. Bäßler ◽  
J. Mech ◽  
K. Szaciłowski ◽  
R. P. Socha ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Band Gap ◽  
Indium Antimonide ◽  
Quantum Confinement ◽  
Pulse Electrodeposition ◽  
Electrochemically Deposited ◽  
Insb Thin Films ◽  
Moss Effect

Indium antimonide thin films were fabricated by pulse electrodeposition. Band gap widening due to quantum confinement (0.17 eV) and the Burstein–Moss effect (0.19 eV) was observed. The stoichiometric InSb films showed S coefficient values higher than those obtained by MOCVD.

QUANTUM CONFINEMENT EFFECTS ON THE OPTICAL PROPERTIES OF ION BEAM SPUTTERED NICKEL OXIDE THIN FILMS

2001 ◽  
Vol 15 (02) ◽  
pp. 191-200 ◽  
Author(s):  
M. GHANASHYAM KRISHNA ◽  
A. K. BHATTACHARYA
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Nickel Oxide ◽  
Band Gap ◽  
Quantum Confinement ◽  
Ion Beam ◽  
Confinement Effects ◽  
Oxide Thin Films ◽  
Quantum Confinement Effects ◽  
Nickel Oxide Thin Films

Quantum confinement effects on the optical properties of ion beam sputtered nickel oxide thin films are reported. Thin films with crystallite sizes in the range 9 to 14 nm have been deposited on to fused silica substrates. There is an increase in band gap, from 3.4 to 3.9 eV, and a decrease in refractive index, from 2.4 to 1.6, with decrease in crystallite size, that can be attributed to quantum confinement effects. The effective mass approximation has been used to explain the observed behaviour in band gap variation.

Band gap tuning of p-type al-doped tio2 thin films for gas sensing applications

2020 ◽  
Vol 714 ◽  
pp. 138382
Author(s):  
Mohammad Nurul Islam ◽  
Jiban Podder ◽  
Khandker Saadat Hossain ◽  
Suresh Sagadevan
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Gas Sensing ◽  
Tio2 Thin Films ◽  
Doped Tio2 ◽  
Sensing Applications ◽  
P Type ◽  
Band Gap Tuning

Influence of Fe3+ ions doping on TiO2 thin films: Defect generation, d-d transition and band gap tuning for optoelectronic device applications

2020 ◽  
pp. 412618
Author(s):  
Tapash Chandra Paul ◽  
Majibul Haque Babu ◽  
Jiban Podder ◽  
Bidhan Chandra Dev ◽  
Sapan Kumar Sen ◽  
...  
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Optoelectronic Device ◽  
Tio2 Thin Films ◽  
Defect Generation ◽  
Device Applications ◽  
Band Gap Tuning
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