Structural reliability evaluation of low-k nanoporous dielectric interlayers integrated into microelectronic devices

RSC Advances ◽  
2015 ◽  
Vol 5 (106) ◽  
pp. 87084-87089 ◽  
Author(s):  
Kyuyoung Heo ◽  
Brian J. Ree ◽  
Kyeung-Keun Choi ◽  
Moonhor Ree
Keyword(s):  
Thermal Annealing ◽  
Chemical Mechanical Polishing ◽  
Multilayer Structure ◽  
Structural Reliability ◽  
Reliability Assessment ◽  
Reliability Evaluation ◽  
Mechanical Polishing ◽  
Microelectronic Devices ◽  
Low K

Structural reliability assessment on the integration of low-k nanoporous dielectrics into a multilayer structure, involving capping, chemical mechanical polishing, post-cleaning, and thermal annealing processes, was successfully demonstrated in a nondestructive manner.

Integration Challenges for Chemical Mechanical Polishing of Cu/Low-κ Interconnects

2003 ◽  
Vol 767 ◽  
Author(s):  
Jeffrey A. Lee ◽  
Mansour Moinpour ◽  
Huey-Chiang Liou ◽  
Thomas Abell
Keyword(s):  
Chemical Mechanical Polishing ◽  
Structural Reliability ◽  
Dielectric Materials ◽  
Mechanical Polishing ◽  
Copper Metallization ◽  
Metal Line ◽  
Significant Challenge ◽  
Microelectronic Devices ◽  
Improved Performance ◽  
Low Permittivity

AbstractThe drive for improved performance of microelectronic devices has led to the prevalence of copper metallization and the aggressive development of low-permittivity (low-κ) dielectric materials for use as interlayer dielectrics in BEOL interconnect structures. Progressive scaling of metal line widths coupled with the need to incorporate ultra low-κ (ULK) dielectrics, with κ<2.2, presents numerous challenges for integration and reliability. Perhaps the most significant challenge for the 90nm technology node and beyond is successful planarization of Cuinterconnect structures by chemical mechanical polishing (CMP). The present paper will discuss the general integration challenges and key structural reliability issues for chemical mechanical polishing of Cu-interconnects incorporating ULK dielectric materials.

Modeling of Polishing Regimes in Chemical Mechanical Polishing

2005 ◽  
Vol 867 ◽  
Author(s):  
Suresh B. Yeruva ◽  
Chang-Won Park ◽  
Brij M. Moudgil
Keyword(s):  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Removal Rate ◽  
Mechanical Polishing ◽  
Operating Conditions ◽  
Comprehensive Model ◽  
Mechanical Effects ◽  
Microelectronic Devices ◽  
Asperity Distribution ◽  
Modification Of The Surface

AbstractChemical mechanical polishing (CMP) is widely used for local and global planarization of microelectronic devices. It has been demonstrated experimentally in the literature that the polishing performance is a result of the synergistic effect of both the chemicals and the particles involved in CMP. However, the fundamental mechanisms of material removal and the interactions of the chemical and mechanical effects are not well understood. A comprehensive model for CMP was developed taking into account both the chemical and mechanical effects for monodisperse slurries. The chemical aspect is attributed to the chemical modification of the surface layer due to slurry chemistry, whereas the mechanical aspect is introduced by indentation of particles into the modified layer and the substrate depending on the operating conditions. In this study, the model is extended to include the particle size and pad asperity distribution effects. The refined model not only predicts the overall removal rate but also the surface roughness of the polished wafer, which is an important factor in CMP. The predictions of the model show reasonable agreement with the experimental observations.

A Model for Optimizing Material Removal Rate in Low-Pressure CMP: Effects of Pad Porosity and Abrasive Concentration

2008 ◽  
Author(s):  
Dinc¸er Bozkaya ◽  
Sinan Mu¨ftu¨
Keyword(s):  
Material Removal Rate ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Removal Rate ◽  
Applied Pressure ◽  
Low Pressure ◽  
Mechanical Polishing ◽  
Low K

The necessity to planarize ultra low-k (ULK) dielectrics [1], and the desire to reduce polishing defects leads to use of lower polishing pressures in chemical mechanical polishing (CMP). However, lowering the applied pressure also decreases the material removal rate (MRR), which causes the polishing time for each wafer to increase. The goal of this work is to investigate effects of pad porosity and abrasive concentration on the MRR.

A Study on Water-Mark Defects in Copper/Low-k Chemical Mechanical Polishing

2007 ◽  
pp. 295-298
Author(s):  
Ja Hyung Han ◽  
Ja Eung Koo ◽  
Kyo Se Choi ◽  
Byung Lyul Park ◽  
Ju Hyuk Chung ◽  
...  
Keyword(s):  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Low K

Delamination analysis of Cu/low-k technology subjected to chemical-mechanical polishing process conditions

2006 ◽  
Vol 46 (9-11) ◽  
pp. 1679-1684 ◽  
Author(s):  
C. Yuan ◽  
W.D. van Driel ◽  
R. van Silfhout ◽  
O. van der Sluis ◽  
R.A.B. Engelen ◽  
...  
Keyword(s):  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Process Conditions ◽  
Polishing Process ◽  
Chemical Mechanical Polishing Process ◽  
Low K

Influence of Chemical-Mechanical Polishing Process on Time Dependent Dielectric Breakdown Reliability of Cu/Low-k Integration

2009 ◽  
Vol 1157 ◽  
Author(s):  
Yohei Yamada ◽  
Nobuhiro Konishi
Keyword(s):  
Chemical Mechanical Polishing ◽  
Crevice Corrosion ◽  
Dielectric Breakdown ◽  
Mechanical Polishing ◽  
Time Dependent ◽  
Surface Corrosion ◽  
Time Dependent Dielectric Breakdown ◽  
Chemical Mechanical Polishing Process ◽  
Cu Oxidation ◽  
Low K

AbstractThe effects of defects caused by Cu chemical-mechanical polishing (CMP) on time-dependent dielectric breakdown (TDDB) in a damascene structure incorporating a low-k interlevel dielectric layer were investigated experimentally. Comb line capacitor structures were prepared with one of three types of defects (rough Cu surface corrosion, Cu depletion, or crevice corrosion) and stressed at 3.2 to 6.2 MV/cm at 140°C. The first two defects had an insignificant effect on the TDDB characteristics while crevice corrosion at the edges of wires significantly degraded them. Investigation of the effects of Cu oxidation during post-CMP cleaning on the TDDB characteristics revealed that the formation of a non-uniform oxide layer accompanying deionized water rinsing was due to the dissolution of Cu oxide during the post-CMP cleaning process. When a barrier metal slurry containing a soluble inhibitor was used, non-uniform oxide formation on the Cu surfaces during post-CMP cleaning degraded the TDDB characteristics. These results demonstrate the importance of uniform Cu oxidation during post-CMP cleaning for improving the TDDB characteristics.

Chemical-Mechanical Polishing of SiCOH-Based Low-k Dielectrics

2019 ◽  
Vol 2 (1) ◽  
pp. 227-236 ◽  
Author(s):  
Rosa María Luna-Sánchez ◽  
Ignacio González-Martínez
Keyword(s):  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Low K
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