Chemical-Mechanical Polishing of SiCOH-Based Low-k Dielectrics

2019 ◽  
Vol 2 (1) ◽  
pp. 227-236 ◽  
Author(s):  
Rosa María Luna-Sánchez ◽  
Ignacio González-Martínez
Keyword(s):  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Low K

A Model for Optimizing Material Removal Rate in Low-Pressure CMP: Effects of Pad Porosity and Abrasive Concentration

2008 ◽  
Author(s):  
Dinc¸er Bozkaya ◽  
Sinan Mu¨ftu¨
Keyword(s):  
Material Removal Rate ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Removal Rate ◽  
Applied Pressure ◽  
Low Pressure ◽  
Mechanical Polishing ◽  
Low K

The necessity to planarize ultra low-k (ULK) dielectrics [1], and the desire to reduce polishing defects leads to use of lower polishing pressures in chemical mechanical polishing (CMP). However, lowering the applied pressure also decreases the material removal rate (MRR), which causes the polishing time for each wafer to increase. The goal of this work is to investigate effects of pad porosity and abrasive concentration on the MRR.

A Study on Water-Mark Defects in Copper/Low-k Chemical Mechanical Polishing

2007 ◽  
pp. 295-298
Author(s):  
Ja Hyung Han ◽  
Ja Eung Koo ◽  
Kyo Se Choi ◽  
Byung Lyul Park ◽  
Ju Hyuk Chung ◽  
...  
Keyword(s):  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Low K

Delamination analysis of Cu/low-k technology subjected to chemical-mechanical polishing process conditions

2006 ◽  
Vol 46 (9-11) ◽  
pp. 1679-1684 ◽  
Author(s):  
C. Yuan ◽  
W.D. van Driel ◽  
R. van Silfhout ◽  
O. van der Sluis ◽  
R.A.B. Engelen ◽  
...  
Keyword(s):  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Process Conditions ◽  
Polishing Process ◽  
Chemical Mechanical Polishing Process ◽  
Low K

Structural reliability evaluation of low-k nanoporous dielectric interlayers integrated into microelectronic devices

RSC Advances ◽  
2015 ◽  
Vol 5 (106) ◽  
pp. 87084-87089 ◽  
Author(s):  
Kyuyoung Heo ◽  
Brian J. Ree ◽  
Kyeung-Keun Choi ◽  
Moonhor Ree
Keyword(s):  
Thermal Annealing ◽  
Chemical Mechanical Polishing ◽  
Multilayer Structure ◽  
Structural Reliability ◽  
Reliability Assessment ◽  
Reliability Evaluation ◽  
Mechanical Polishing ◽  
Microelectronic Devices ◽  
Low K

Structural reliability assessment on the integration of low-k nanoporous dielectrics into a multilayer structure, involving capping, chemical mechanical polishing, post-cleaning, and thermal annealing processes, was successfully demonstrated in a nondestructive manner.

Influence of Chemical-Mechanical Polishing Process on Time Dependent Dielectric Breakdown Reliability of Cu/Low-k Integration

2009 ◽  
Vol 1157 ◽  
Author(s):  
Yohei Yamada ◽  
Nobuhiro Konishi
Keyword(s):  
Chemical Mechanical Polishing ◽  
Crevice Corrosion ◽  
Dielectric Breakdown ◽  
Mechanical Polishing ◽  
Time Dependent ◽  
Surface Corrosion ◽  
Time Dependent Dielectric Breakdown ◽  
Chemical Mechanical Polishing Process ◽  
Cu Oxidation ◽  
Low K

AbstractThe effects of defects caused by Cu chemical-mechanical polishing (CMP) on time-dependent dielectric breakdown (TDDB) in a damascene structure incorporating a low-k interlevel dielectric layer were investigated experimentally. Comb line capacitor structures were prepared with one of three types of defects (rough Cu surface corrosion, Cu depletion, or crevice corrosion) and stressed at 3.2 to 6.2 MV/cm at 140°C. The first two defects had an insignificant effect on the TDDB characteristics while crevice corrosion at the edges of wires significantly degraded them. Investigation of the effects of Cu oxidation during post-CMP cleaning on the TDDB characteristics revealed that the formation of a non-uniform oxide layer accompanying deionized water rinsing was due to the dissolution of Cu oxide during the post-CMP cleaning process. When a barrier metal slurry containing a soluble inhibitor was used, non-uniform oxide formation on the Cu surfaces during post-CMP cleaning degraded the TDDB characteristics. These results demonstrate the importance of uniform Cu oxidation during post-CMP cleaning for improving the TDDB characteristics.

Understanding adhesion failure in low-k dielectric stack during Chemical-Mechanical Polishing

2003 ◽  
Vol 795 ◽  
Author(s):  
F. Iacopi ◽  
D. Degryse ◽  
I. Vos ◽  
M. Patz ◽  
K. Maex
Keyword(s):  
Chemical Mechanical Polishing ◽  
Critical Role ◽  
Mechanical Polishing ◽  
Interface Fracture ◽  
Interface Debonding ◽  
Energy Materials ◽  
Plastic Properties ◽  
Adhesion Failure ◽  
Low K ◽  
The Way

ABSTRACTLow-k dielectrics are currently starting to replace SiO2 in advanced on-chip interconnects. Being low surface energy materials, a major concern for the integration of such dielectrics in Cu damascene processes is given by adhesion failure at the interfaces of the low-k films with cap or liner layers during Chemical Mechanical Polishing (CMP). A cross-comparison between interface fracture energies as measured through four-point bending, CMP experiments and stress fields computed by Finite Element Modeling, shows that it is not possible to predict failures by setting a ‘universal’ threshold on adhesion strength.In particular, we report on the critical role of CMP –induced shear stress on the onset of interface debonding, and the way the shear load is transmitted to the critical interfaces. The top-down load transmission depends on the position of the weak interfaces, and on the way the intermediate films in the stack can confine such load through their thickness and mechanical (elastic and plastic) properties.

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