Thermoelectrics with earth abundant elements: low thermal conductivity and high thermopower in doped SnS

2014 ◽  
Vol 2 (41) ◽  
pp. 17302-17306 ◽  
Author(s):  
Qing Tan ◽  
Li-Dong Zhao ◽  
Jing-Feng Li ◽  
Chao-Feng Wu ◽  
Tian-Ran Wei ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Band Gap ◽  
Thermoelectric Material ◽  
Environmentally Friendly ◽  
Wide Band ◽  
Wide Band Gap ◽  
Ag Doping ◽  
Earth Abundant

We present that earth-abundant and environmentally friendly SnS is a promising thermoelectric material due to its high ZT of 0.6 despite its relatively wide band gap of 1.2 eV. Ag doping significantly improved electrical conductivity but maintained the Seebeck coefficient above 400 μV K−1 and the thermal conductivity below 0.45 W m−1 K−1 at 873 K.

Layer-dependent photocatalysts of GaN/SiC-based multilayer van der Waals heterojunctions for Hydrogen Evolution

2021 ◽  
Author(s):  
Bojun Peng ◽  
Liang Xu ◽  
Jian Zeng ◽  
Xiaopeng Qi ◽  
Youwen Yang ◽  
...  
Keyword(s):  
Band Gap ◽  
Hydrogen Evolution ◽  
High Performance ◽  
Van Der Waals ◽  
Environmentally Friendly ◽  
Wide Band ◽  
Two Dimensional ◽  
Wide Band Gap ◽  
Van Der Waals Heterostructures ◽  
Composite Photocatalysts

The development of non-precious, high-performance and environmentally friendly wide band gap semiconductor composite photocatalysts is highly desirable. Here we report two-dimensional (2D) GaN/SiC-based multilayer van der Waals heterostructures for hydrogen...

Band Structure and Thermoelectric Properties of Ni(x)Zn(1-x)Fe2O4

2021 ◽  
Vol 317 ◽  
pp. 28-34
Author(s):  
Joon Hoong Lim
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Band Structure ◽  
Seebeck Coefficient ◽  
Band Gap ◽  
Thermoelectric Properties ◽  
Xrd Analysis ◽  
Valence Band Maximum ◽  
Solid State Method ◽  
Ni Content

Thermoelectric materials has made a great potential in sustainable energy industries, which enable the energy conversion from heat to electricity. The band structure and thermoelectric properties of Ni(x)Zn(1-x)Fe2O4 have been investigated. The bulk pellets were prepared from analytical grade ZnO, NiO and Fe2O3 powder using solid-state method. It was possible to obtain high thermoelectric properties of Ni(x)Zn(1-x)Fe2O4 by controlling the ratios of dopants and the sintering temperature. XRD analysis showed that the fabricated samples have a single phase formation of cubic spinel structure. The thermoelectric properties of Ni(x)Zn(1-x)Fe2O4 pellets improved with increasing Ni. The electrical conductivity of Ni(x)Zn(1-x)Fe2O4 pellets decreased with increasing Ni content. The electrical conductivity of Ni(x)Zn(1-x)Fe2O4 (x = 0.0) is (0.515 x10-3 Scm-1). The band structure shows that ZnxCu1-xFe2O4 is an indirect band gap material with the valence band maximum (VBM) at M and conduction band minimum (CBM) at A. The band gap of Ni(x)Zn(1-x)Fe2O4 increased with increasing Ni content. The increasing band gap correlated with the lower electrical conductivity. The thermal conductivity of Ni(x)Zn(1-x)Fe2O4 pellets decreased with increasing Ni content. The presence of Ni served to decrease thermal conductivity by 8 Wm-1K-1 over pure samples. The magnitude of the Seebeck coefficient for Ni(x)Zn(1-x)Fe2O4 pellets increased with increasing amounts of Ni. The figure of merit for Ni(x)Zn(1-x)Fe2O4 pellets and thin films was improved by increasing Ni due to its high Seebeck coefficient and low thermal conductivity.

scholarly journals Solid solubility of rare earth elements (Nd, Eu, Tb) in In2−xSnxO3 – effect on electrical conductivity and optical properties

2014 ◽  
Vol 43 (25) ◽  
pp. 9620-9632 ◽  
Author(s):  
T. O. L. Sunde ◽  
M. Lindgren ◽  
T. O. Mason ◽  
M.-A. Einarsrud ◽  
T. Grande
Keyword(s):  
Electrical Conductivity ◽  
Optical Properties ◽  
Rare Earth ◽  
Rare Earth Elements ◽  
Band Gap ◽  
Solid Solubility ◽  
Wide Band ◽  
Wide Band Gap ◽  
Recent Interest ◽  
Wide Band Gap Semiconductors

Wide band-gap semiconductors doped with luminescent rare earth elements (REEs) have attracted recent interest due to their unique optical properties.

scholarly journals A wide-band-gap p-type thermoelectric material based on quaternary chalcogenides of Cu2ZnSnQ4 (Q=S,Se)

2009 ◽  
Vol 94 (20) ◽  
pp. 202103 ◽  
Author(s):  
Min-Ling Liu ◽  
Fu-Qiang Huang ◽  
Li-Dong Chen ◽  
I-Wei Chen
Keyword(s):  
Band Gap ◽  
Thermoelectric Material ◽  
Wide Band ◽  
Wide Band Gap ◽  
P Type

New oxide phase Cd1−xYxSb2O6with a wide band gap and high electrical conductivity

1993 ◽  
Vol 63 (24) ◽  
pp. 3335-3337 ◽  
Author(s):  
Kazuhiko Yanagawa ◽  
Yoshimichi Ohki ◽  
Naoyuki Ueda ◽  
Takahisa Omata ◽  
Takuya Hashimoto ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Band Gap ◽  
Wide Band ◽  
Oxide Phase ◽  
High Electrical Conductivity ◽  
Wide Band Gap

New Oxide Phase $\bf Cd_{2(1-{\ninmbi x})}Y_{2{\ninmbi x}}Sb_{2}O_{7}$ Pyrochlore with a Wide Band Gap and High Electrical Conductivity

1994 ◽  
Vol 33 (Part 2, No. 2B) ◽  
pp. L238-L240 ◽  
Author(s):  
Kazuhiko Yanagawa ◽  
Yoshimichi Ohki ◽  
Takahisa Omata ◽  
Hideo Hosono ◽  
Naoyuki Ueda ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Band Gap ◽  
Wide Band ◽  
Oxide Phase ◽  
High Electrical Conductivity ◽  
Wide Band Gap

Polarization-induced electrical conductivity in ultra-wide band gap AlGaN alloys

2016 ◽  
Vol 109 (22) ◽  
pp. 222101 ◽  
Author(s):  
Andrew M. Armstrong ◽  
Andrew A. Allerman
Keyword(s):  
Electrical Conductivity ◽  
Band Gap ◽  
Wide Band ◽  
Ultra Wide Band ◽  
Wide Band Gap

scholarly journals Honeycomb-like puckered PbSe with wide band gap as promising thermoelectric material: A first-principles prediction

2021 ◽  
pp. 100914
Author(s):  
Shuwei Tang ◽  
Shulin Bai ◽  
Mengxiu Wu ◽  
Dongming Luo ◽  
Dongyang Wang ◽  
...  
Keyword(s):  
Band Gap ◽  
Thermoelectric Material ◽  
First Principles ◽  
Wide Band ◽  
Wide Band Gap

Largely Enhanced Figure of Merit for CoSb3 Thermoelectric Material by Introducing Disordered Structure

2012 ◽  
Vol 189 ◽  
pp. 87-91
Author(s):  
Peng Xian Lu ◽  
Man Man Lu
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Thermoelectric Material ◽  
Hot Pressing ◽  
Figure Of Merit ◽  
Ordered Structure ◽  
Pressing Temperature ◽  
Disordered Structure

To enhance the Seebeck coefficient and reduce the thermal conductivity and meanwhile keep an excellent electrical conductivity, the disordered structure was introduced into the ordered CoSb3 nanocrystalline by increasing hot-pressing temperature. The results show that the introduced disordered structure can increase the Seebeck coefficient from 125 VK-1 to 390 VK-1 measured at 773K, the thermal conductivity can be reduced from 1.94 Wm-1K-1 to 1.73 Wm-1K-1. Even though the electrical conductivity is decreased from 74000 Sm-1 to 14000 Sm-1, a largely enhanced figure of merit of 1.21 at 773 K still can be obtained for the sample hot-pressed at 943 K. Therefore, introducing the disordered structure into an ordered structure can be considered as an effective way to enhance the figure of merit.

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