New oxide phase Cd1−xYxSb2O6with a wide band gap and high electrical conductivity

1993 ◽  
Vol 63 (24) ◽  
pp. 3335-3337 ◽  
Author(s):  
Kazuhiko Yanagawa ◽  
Yoshimichi Ohki ◽  
Naoyuki Ueda ◽  
Takahisa Omata ◽  
Takuya Hashimoto ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Band Gap ◽  
Wide Band ◽  
Oxide Phase ◽  
High Electrical Conductivity ◽  
Wide Band Gap

New Oxide Phase $\bf Cd_{2(1-{\ninmbi x})}Y_{2{\ninmbi x}}Sb_{2}O_{7}$ Pyrochlore with a Wide Band Gap and High Electrical Conductivity

1994 ◽  
Vol 33 (Part 2, No. 2B) ◽  
pp. L238-L240 ◽  
Author(s):  
Kazuhiko Yanagawa ◽  
Yoshimichi Ohki ◽  
Takahisa Omata ◽  
Hideo Hosono ◽  
Naoyuki Ueda ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Band Gap ◽  
Wide Band ◽  
Oxide Phase ◽  
High Electrical Conductivity ◽  
Wide Band Gap

scholarly journals Solid solubility of rare earth elements (Nd, Eu, Tb) in In2−xSnxO3 – effect on electrical conductivity and optical properties

2014 ◽  
Vol 43 (25) ◽  
pp. 9620-9632 ◽  
Author(s):  
T. O. L. Sunde ◽  
M. Lindgren ◽  
T. O. Mason ◽  
M.-A. Einarsrud ◽  
T. Grande
Keyword(s):  
Electrical Conductivity ◽  
Optical Properties ◽  
Rare Earth ◽  
Rare Earth Elements ◽  
Band Gap ◽  
Solid Solubility ◽  
Wide Band ◽  
Wide Band Gap ◽  
Recent Interest ◽  
Wide Band Gap Semiconductors

Wide band-gap semiconductors doped with luminescent rare earth elements (REEs) have attracted recent interest due to their unique optical properties.

New oxide phase with wide band gap and high electroconductivity CdGa2O4spinel

1993 ◽  
Vol 62 (5) ◽  
pp. 499-500 ◽  
Author(s):  
Takahisa Omata ◽  
Naoyuki Ueda ◽  
Naoko Hikuma ◽  
Kazushige Ueda ◽  
Hiroshi Mizoguchi ◽  
...  
Keyword(s):  
Band Gap ◽  
Wide Band ◽  
Oxide Phase ◽  
Wide Band Gap

New oxide phase with wide band gap and high electroconductivity, MgIn2O4

1992 ◽  
Vol 61 (16) ◽  
pp. 1954-1955 ◽  
Author(s):  
Naoyuki Ueda ◽  
Takahisa Omata ◽  
Naoko Hikuma ◽  
Kazushige Ueda ◽  
Hiroshi Mizoguchi ◽  
...  
Keyword(s):  
Band Gap ◽  
Wide Band ◽  
Oxide Phase ◽  
Wide Band Gap

Polarization-induced electrical conductivity in ultra-wide band gap AlGaN alloys

2016 ◽  
Vol 109 (22) ◽  
pp. 222101 ◽  
Author(s):  
Andrew M. Armstrong ◽  
Andrew A. Allerman
Keyword(s):  
Electrical Conductivity ◽  
Band Gap ◽  
Wide Band ◽  
Ultra Wide Band ◽  
Wide Band Gap

Phase Mapping Sputter Deposited Wide Band-Gap Metal Oxides

1992 ◽  
Vol 242 ◽  
Author(s):  
C.R. Aita ◽  
R.C. Lee ◽  
C.-K. Kwok ◽  
E.A. Kolawa
Keyword(s):  
Metal Oxides ◽  
Band Gap ◽  
Wide Band ◽  
Oxide Phase ◽  
Deposition Process ◽  
Sputter Deposition ◽  
Wide Band Gap ◽  
Growth Environment ◽  
Reactive Sputter Deposition ◽  
Sputter Deposited

ABSTRACTReactive sputter deposition is a widely-used process for growing films of high melting point materials near room temperature and desirable metastable structures not attainable in material grown under conditions of thermodynamic equilibrium. Both categories include wide band-gap metal oxides. A first step towards reproducible growth is to develop a “phase map” for the metal-oxygen system of interest. The map graphically relates independent sputter deposition process parameters, the growth environment, and the metallurgical phase(s) formed in the film. This paper shows how phase maps are constructed and used to observe general trends in oxide phase formation sequence, with examples from the Nb-O, Y-O, and Zr-O systems.

Thermoelectrics with earth abundant elements: low thermal conductivity and high thermopower in doped SnS

2014 ◽  
Vol 2 (41) ◽  
pp. 17302-17306 ◽  
Author(s):  
Qing Tan ◽  
Li-Dong Zhao ◽  
Jing-Feng Li ◽  
Chao-Feng Wu ◽  
Tian-Ran Wei ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Band Gap ◽  
Thermoelectric Material ◽  
Environmentally Friendly ◽  
Wide Band ◽  
Wide Band Gap ◽  
Ag Doping ◽  
Earth Abundant

We present that earth-abundant and environmentally friendly SnS is a promising thermoelectric material due to its high ZT of 0.6 despite its relatively wide band gap of 1.2 eV. Ag doping significantly improved electrical conductivity but maintained the Seebeck coefficient above 400 μV K−1 and the thermal conductivity below 0.45 W m−1 K−1 at 873 K.

TEM and cathodoluminescence of precipitates in II-VI semiconductors

1988 ◽  
Vol 46 ◽  
pp. 488-489
Author(s):  
Joanna L. Batstone
Keyword(s):  
Crystal Growth ◽  
Band Gap ◽  
Local Strain ◽  
Wide Band ◽  
Optoelectronic Device ◽  
Wide Band Gap ◽  
Bulk Crystal Growth ◽  
Transmission Electron ◽  
Device Applications ◽  
Stoichiometry Control

Interest in II-VI semiconductors centres around optoelectronic device applications. The wide band gap II-VI semiconductors such as ZnS, ZnSe and ZnTe have been used in lasers and electroluminescent displays yielding room temperature blue luminescence. The narrow gap II-VI semiconductors such as CdTe and HgxCd1-x Te are currently used for infrared detectors, where the band gap can be varied continuously by changing the alloy composition x.Two major sources of precipitation can be identified in II-VI materials; (i) dopant introduction leading to local variations in concentration and subsequent precipitation and (ii) Te precipitation in ZnTe, CdTe and HgCdTe due to native point defects which arise from problems associated with stoichiometry control during crystal growth. Precipitation is observed in both bulk crystal growth and epitaxial growth and is frequently associated with segregation and precipitation at dislocations and grain boundaries. Precipitation has been observed using transmission electron microscopy (TEM) which is sensitive to local strain fields around inclusions.

Wide Band-Gap Kesterite Thin Films for Photovoltaic Applications

2018 ◽  
Author(s):  
Raquel Caballero ◽  
Leonor de la Cueva ◽  
Andrea Ruiz-Perona ◽  
Yudenia Sánchez ◽  
Markus Neuschitzer ◽  
...  
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Wide Band ◽  
Wide Band Gap ◽  
Photovoltaic Applications

Preparation and Characterization of Polyvinylidene Fluoride/ZrO2-TiO2 Optical Film with Wide Band Gap and High Refractive Index

2013 ◽  
Vol 28 (6) ◽  
pp. 671-676 ◽  
Author(s):  
Yu-Qing ZHANG ◽  
Li-Li ZHAO ◽  
Shi-Long XU ◽  
Chao ZHANG ◽  
Xiao-Ying CHEN ◽  
...  
Keyword(s):  
Refractive Index ◽  
Band Gap ◽  
Polyvinylidene Fluoride ◽  
Wide Band ◽  
High Refractive Index ◽  
Wide Band Gap ◽  
Optical Film
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