scholarly journals High Thermoelectric Performance in the Wide Band‐Gap AgGa 1‐ x Te 2 Compounds: Directional Negative Thermal Expansion and Intrinsically Low Thermal Conductivity

2018 ◽  
Vol 29 (6) ◽  
pp. 1806534 ◽  
Author(s):  
Xianli Su ◽  
Na Zhao ◽  
Shiqiang Hao ◽  
Constantinos C. Stoumpos ◽  
Mengyuan Liu ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Thermal Expansion ◽  
Band Gap ◽  
Negative Thermal Expansion ◽  
Wide Band ◽  
Thermoelectric Performance ◽  
Wide Band Gap ◽  
Low Thermal Conductivity

Thermoelectrics with earth abundant elements: low thermal conductivity and high thermopower in doped SnS

2014 ◽  
Vol 2 (41) ◽  
pp. 17302-17306 ◽  
Author(s):  
Qing Tan ◽  
Li-Dong Zhao ◽  
Jing-Feng Li ◽  
Chao-Feng Wu ◽  
Tian-Ran Wei ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Band Gap ◽  
Thermoelectric Material ◽  
Environmentally Friendly ◽  
Wide Band ◽  
Wide Band Gap ◽  
Ag Doping ◽  
Earth Abundant

We present that earth-abundant and environmentally friendly SnS is a promising thermoelectric material due to its high ZT of 0.6 despite its relatively wide band gap of 1.2 eV. Ag doping significantly improved electrical conductivity but maintained the Seebeck coefficient above 400 μV K−1 and the thermal conductivity below 0.45 W m−1 K−1 at 873 K.

Low thermal conductivity of the negative thermal expansion material, HfMo2O8

2007 ◽  
Vol 90 (15) ◽  
pp. 151906 ◽  
Author(s):  
Catherine A. Kennedy ◽  
Mary Anne White ◽  
Angus P. Wilkinson ◽  
Tamas Varga
Keyword(s):  
Thermal Conductivity ◽  
Thermal Expansion ◽  
Negative Thermal Expansion ◽  
Low Thermal Conductivity

Assessment of the thermoelectric performance of layered semiconductor SrFCuTe with wide band-gap

2021 ◽  
pp. 122169
Author(s):  
Yumei Jiang ◽  
Yuting Zhang ◽  
Juanjuan Xing ◽  
Yibin Hu ◽  
Xinxin Yang ◽  
...  
Keyword(s):  
Band Gap ◽  
Wide Band ◽  
Thermoelectric Performance ◽  
Layered Semiconductor ◽  
Wide Band Gap

Reduced Thermal Conductivity by Low-Frequency Optic Phonons that Give Rise to Negative Thermal Expansion: Opportunities for Thermoelectrics?

2007 ◽  
Vol 1044 ◽  
Author(s):  
Mary Anne White ◽  
Catherine A. Whitman
Keyword(s):  
Thermal Conductivity ◽  
Thermal Expansion ◽  
Electronic Properties ◽  
Thermoelectric Materials ◽  
Negative Thermal Expansion ◽  
Low Frequency ◽  
Acoustic Phonons ◽  
Low Thermal Conductivity ◽  
Efficient Coupling

AbstractWe have recently found that the negative thermal expansion (NTE) materials, ZrW2O8 and HfMo2O8, show exceptionally low thermal conductivity. We surmise that the mechanism is the efficient coupling of the low-frequency optic phonons that give rise to negative thermal expansion with the heat-carrying acoustic phonons. Although neither ZrW2O8 nor HfMo2O8 has suitable electronic properties for thermoelectric applications, perhaps the principle of reduced thermal conductivity by low-frequency optic phonons in NTE materials can be used to develop more efficient thermoelectric materials.

TEM and cathodoluminescence of precipitates in II-VI semiconductors

1988 ◽  
Vol 46 ◽  
pp. 488-489
Author(s):  
Joanna L. Batstone
Keyword(s):  
Crystal Growth ◽  
Band Gap ◽  
Local Strain ◽  
Wide Band ◽  
Optoelectronic Device ◽  
Wide Band Gap ◽  
Bulk Crystal Growth ◽  
Transmission Electron ◽  
Device Applications ◽  
Stoichiometry Control

Interest in II-VI semiconductors centres around optoelectronic device applications. The wide band gap II-VI semiconductors such as ZnS, ZnSe and ZnTe have been used in lasers and electroluminescent displays yielding room temperature blue luminescence. The narrow gap II-VI semiconductors such as CdTe and HgxCd1-x Te are currently used for infrared detectors, where the band gap can be varied continuously by changing the alloy composition x.Two major sources of precipitation can be identified in II-VI materials; (i) dopant introduction leading to local variations in concentration and subsequent precipitation and (ii) Te precipitation in ZnTe, CdTe and HgCdTe due to native point defects which arise from problems associated with stoichiometry control during crystal growth. Precipitation is observed in both bulk crystal growth and epitaxial growth and is frequently associated with segregation and precipitation at dislocations and grain boundaries. Precipitation has been observed using transmission electron microscopy (TEM) which is sensitive to local strain fields around inclusions.

Wide Band-Gap Kesterite Thin Films for Photovoltaic Applications

2018 ◽  
Author(s):  
Raquel Caballero ◽  
Leonor de la Cueva ◽  
Andrea Ruiz-Perona ◽  
Yudenia Sánchez ◽  
Markus Neuschitzer ◽  
...  
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Wide Band ◽  
Wide Band Gap ◽  
Photovoltaic Applications

Preparation and Characterization of Polyvinylidene Fluoride/ZrO2-TiO2 Optical Film with Wide Band Gap and High Refractive Index

2013 ◽  
Vol 28 (6) ◽  
pp. 671-676 ◽  
Author(s):  
Yu-Qing ZHANG ◽  
Li-Li ZHAO ◽  
Shi-Long XU ◽  
Chao ZHANG ◽  
Xiao-Ying CHEN ◽  
...  
Keyword(s):  
Refractive Index ◽  
Band Gap ◽  
Polyvinylidene Fluoride ◽  
Wide Band ◽  
High Refractive Index ◽  
Wide Band Gap ◽  
Optical Film
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