Study of the growth of thin nitride films under low-energy nitrogen-ion bombardment

1994 ◽  
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pp. 395-399 ◽  
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Zhong-Min Ren ◽  
Zhi-Feng Ying ◽  
Xia-Xing Xiong ◽  
Mao-Qi He ◽  
Fu-Ming Li ◽  
...  
RSC Advances ◽  
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Vol 4 (52) ◽  
pp. 27308-27314 ◽  
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InN/GaN heterostructure based Schottky diodes are fabricated by low energetic nitrogen ions at 300 °C.


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Vol 252 (10) ◽  
pp. 3413-3416 ◽  
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M. Petravić ◽  
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2016 ◽  
Vol 49 (7) ◽  
pp. 075301 ◽  
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E Akbarnejad ◽  
M Ghoranneviss ◽  
S Mohajerzadeh ◽  
M R Hantehzadeh ◽  
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Vol 28 (6) ◽  
pp. 533-539 ◽  
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