scholarly journals “Dirty nanostructures”: aerosol-assisted synthesis of temperature stable mesoporous metal oxide semiconductor spheres comprising hierarchically assembled zinc oxide nanocrystals controlled via impurities

Nanoscale ◽  
2014 ◽  
Vol 6 (3) ◽  
pp. 1698-1706 ◽  
Author(s):  
Daniela Lehr ◽  
Dennis Großmann ◽  
Wolfgang Grünert ◽  
Sebastian Polarz
Keyword(s):  
Thermal Stability ◽  
Zinc Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Zno Nanostructures ◽  
Impurity Atoms ◽  
Mesoporous Zno ◽  
Mesoporous Metal ◽  
Thermal Stability Of ◽  
Intentional Introduction

The thermal stability of mesoporous ZnO nanostructures could be enhanced by intentional introduction of impurity atoms like Al or S.

Thermal stability of nanoscale Ge metal-oxide-semiconductor capacitors with ZrO2 high-k gate dielectrics on Ge epitaxial layers

2007 ◽  
Vol 90 (20) ◽  
pp. 202102 ◽  
Author(s):  
Jungwoo Oh ◽  
Prashant Majhi ◽  
Chang Yong Kang ◽  
Ji-Woon Yang ◽  
Hsing-Huang Tseng ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Metal Oxide ◽  
Gate Dielectrics ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Epitaxial Layers ◽  
High K ◽  
Thermal Stability Of

Effect of nitrogen content in HfxTayN metal gate on work function and thermal stability of advanced metal-oxide-semiconductor devices

2007 ◽  
Vol 90 (13) ◽  
pp. 132101 ◽  
Author(s):  
Ping-Hung Tsai ◽  
Kuei-Shu Chang-Liao ◽  
Tzu-Cheng Wang ◽  
Tien-Ko Wang ◽  
Chuen-Horng Tsai ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Metal Oxide ◽  
Work Function ◽  
Nitrogen Content ◽  
Semiconductor Devices ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Metal Gate ◽  
Thermal Stability Of
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