Highly sensitive electrical detection of TCNE on chemically passivated silicon-on-insulator

2011 ◽  
Vol 47 (38) ◽  
pp. 10593 ◽  
Author(s):  
Girjesh Dubey ◽  
Federico Rosei ◽  
Gregory P. Lopinski
Keyword(s):  
Silicon On Insulator ◽  
Electrical Detection ◽  
Highly Sensitive ◽  
Passivated Silicon

scholarly journals Highly Sensitive and Selective Sodium Ion Sensor Based on Silicon Nanowire Dual Gate Field-Effect Transistor

Sensors ◽  
2021 ◽  
Vol 21 (12) ◽  
pp. 4213
Author(s):  
Seong-Kun Cho ◽  
Won-Ju Cho
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Silicon Nanowire ◽  
Silicon On Insulator ◽  
Sodium Ion ◽  
Ion Sensor ◽  
Highly Sensitive ◽  
Selective Membrane ◽  
Dual Gate ◽  
Effect Transistor

In this study, a highly sensitive and selective sodium ion sensor consisting of a dual-gate (DG) structured silicon nanowire (SiNW) field-effect transistor (FET) as the transducer and a sodium-selective membrane extended gate (EG) as the sensing unit was developed. The SiNW channel DG FET was fabricated through the dry etching of the silicon-on-insulator substrate by using electrospun polyvinylpyrrolidone nanofibers as a template for the SiNW pattern transfer. The selectivity and sensitivity of sodium to other ions were verified by constructing a sodium ion sensor, wherein the EG was electrically connected to the SiNW channel DG FET with a sodium-selective membrane. An extremely high sensitivity of 1464.66 mV/dec was obtained for a NaCl solution. The low sensitivities of the SiNW channel FET-based sodium ion sensor to CaCl2, KCl, and pH buffer solutions demonstrated its excellent selectivity. The reliability and stability of the sodium ion sensor were verified under non-ideal behaviors by analyzing the hysteresis and drift. Therefore, the SiNW channel DG FET-based sodium ion sensor, which comprises a sodium-selective membrane EG, can be applied to accurately detect sodium ions in the analyses of sweat or blood.

A highly sensitive broadband planar metal-oxide-semiconductor photo detector fabricated on a silicon-on-insulator substrate

2014 ◽  
Vol 116 (7) ◽  
pp. 074513 ◽  
Author(s):  
V. Mikhelashvili ◽  
D. Cristea ◽  
B. Meyler ◽  
S. Yofis ◽  
Y. Shneider ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Silicon On Insulator ◽  
Oxide Semiconductor ◽  
Highly Sensitive ◽  
Insulator Substrate

Highly sensitive photo-detectors for the ultra-violet wavelength range based on a dielectric stack and a silicon on insulator substrate

2019 ◽  
Vol 114 (7) ◽  
pp. 073504
Author(s):  
V. Mikhelashvili ◽  
Y. Shneider ◽  
A. Sherman ◽  
S. Yofis ◽  
G. Ankonina ◽  
...  
Keyword(s):  
Wavelength Range ◽  
Ultra Violet ◽  
Silicon On Insulator ◽  
Highly Sensitive ◽  
Photo Detectors ◽  
Insulator Substrate

scholarly journals Highly Sensitive Detection of CA 125 Protein with the Use of an n-Type Nanowire Biosensor

Biosensors ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 210
Author(s):  
Kristina A. Malsagova ◽  
Tatyana O. Pleshakova ◽  
Rafael A. Galiullin ◽  
Andrey F. Kozlov ◽  
Ivan D. Shumov ◽  
...  
Keyword(s):  
Protein Detection ◽  
Covalent Immobilization ◽  
Silicon On Insulator ◽  
Target Protein ◽  
Ca 125 ◽  
Minimum Concentration ◽  
Immobilized Antibodies ◽  
Highly Sensitive ◽  
Highly Sensitive Detection ◽  
Biospecific Interaction

The detection of CA 125 protein in a solution using a silicon-on-insulator (SOI)-nanowire biosensor with n-type chip has been experimentally demonstrated. The surface of nanowires was modified by covalent immobilization of antibodies against CA 125 in order to provide the biospecificity of the target protein detection. We have demonstrated that the biosensor signal, which results from the biospecific interaction between CA 125 and the covalently immobilized antibodies, increases with the increase in the protein concentration. At that, the minimum concentration, at which the target protein was detectable with the SOI-nanowire biosensor, amounted to 1.5 × 10−16 M.

scholarly journals SOI-Nanowire Biosensor for the Detection of Glioma-Associated miRNAs in Plasma

Chemosensors ◽  
2020 ◽  
Vol 8 (4) ◽  
pp. 95
Author(s):  
Kristina A. Malsagova ◽  
Tatyana O. Pleshakova ◽  
Rafael A. Galiullin ◽  
Andrey F. Kozlov ◽  
Tatyana S. Romanova ◽  
...  
Keyword(s):  
Elevated Level ◽  
Silicon Nanowire ◽  
Silicon On Insulator ◽  
Sensor Chip ◽  
Concentration Limit ◽  
Synthetic Analogue ◽  
Oligonucleotide Probes ◽  
System A ◽  
Highly Sensitive ◽  
Oligonucleotide Detection

Herein, we report the development of a highly sensitive nanotechnology-based system—silicon-on-insulator nanowire biosensor for the revelation of microRNAs (miRNAs), associated with the development of glioma in the human. In this system, a sensor chip, bearing an array of silicon nanowire structures, is employed. The sensor chip is fabricated using a top-down technology. In our experiments reported herein, we demonstrated the detection of DNA oligonucleotide (oDNA), which represents a synthetic analogue of microRNA-363 associated with the development of glioma. To provide biospecific detection of the target oligonucleotides, the surface of the nanowire structures is modified with oligonucleotide probes; the latter are complementary to the target ones. The concentration limit of the target oligonucleotide detection, attained using our nanowire biosensor, is at the level of DL~10−17 M. The revelation of the elevated level of glioma-associated miRNA in plasma is also demonstrated.

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