Highly sensitive photo-detectors for the ultra-violet wavelength range based on a dielectric stack and a silicon on insulator substrate

2019 ◽  
Vol 114 (7) ◽  
pp. 073504
Author(s):  
V. Mikhelashvili ◽  
Y. Shneider ◽  
A. Sherman ◽  
S. Yofis ◽  
G. Ankonina ◽  
...  
Keyword(s):  
Wavelength Range ◽  
Ultra Violet ◽  
Silicon On Insulator ◽  
Highly Sensitive ◽  
Photo Detectors ◽  
Insulator Substrate

A highly sensitive broadband planar metal-oxide-semiconductor photo detector fabricated on a silicon-on-insulator substrate

2014 ◽  
Vol 116 (7) ◽  
pp. 074513 ◽  
Author(s):  
V. Mikhelashvili ◽  
D. Cristea ◽  
B. Meyler ◽  
S. Yofis ◽  
Y. Shneider ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Silicon On Insulator ◽  
Oxide Semiconductor ◽  
Highly Sensitive ◽  
Insulator Substrate

scholarly journals Highly Sensitive and Selective Sodium Ion Sensor Based on Silicon Nanowire Dual Gate Field-Effect Transistor

Sensors ◽  
2021 ◽  
Vol 21 (12) ◽  
pp. 4213
Author(s):  
Seong-Kun Cho ◽  
Won-Ju Cho
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Silicon Nanowire ◽  
Silicon On Insulator ◽  
Sodium Ion ◽  
Ion Sensor ◽  
Highly Sensitive ◽  
Selective Membrane ◽  
Dual Gate ◽  
Effect Transistor

In this study, a highly sensitive and selective sodium ion sensor consisting of a dual-gate (DG) structured silicon nanowire (SiNW) field-effect transistor (FET) as the transducer and a sodium-selective membrane extended gate (EG) as the sensing unit was developed. The SiNW channel DG FET was fabricated through the dry etching of the silicon-on-insulator substrate by using electrospun polyvinylpyrrolidone nanofibers as a template for the SiNW pattern transfer. The selectivity and sensitivity of sodium to other ions were verified by constructing a sodium ion sensor, wherein the EG was electrically connected to the SiNW channel DG FET with a sodium-selective membrane. An extremely high sensitivity of 1464.66 mV/dec was obtained for a NaCl solution. The low sensitivities of the SiNW channel FET-based sodium ion sensor to CaCl2, KCl, and pH buffer solutions demonstrated its excellent selectivity. The reliability and stability of the sodium ion sensor were verified under non-ideal behaviors by analyzing the hysteresis and drift. Therefore, the SiNW channel DG FET-based sodium ion sensor, which comprises a sodium-selective membrane EG, can be applied to accurately detect sodium ions in the analyses of sweat or blood.

Ultra-Low Noise Schottky Junction Tri-Gate Silicon Nanowire FET on Bonded Silicon-on-Insulator Substrate

2021 ◽  
Vol 42 (4) ◽  
pp. 469-472
Author(s):  
Yingtao Yu ◽  
Si Chen ◽  
Qitao Hu ◽  
Paul Solomon ◽  
Zhen Zhang
Keyword(s):  
Silicon Nanowire ◽  
Low Noise ◽  
Silicon On Insulator ◽  
Schottky Junction ◽  
Ultra Low Noise ◽  
Insulator Substrate

Highly sensitive electrical detection of TCNE on chemically passivated silicon-on-insulator

2011 ◽  
Vol 47 (38) ◽  
pp. 10593 ◽  
Author(s):  
Girjesh Dubey ◽  
Federico Rosei ◽  
Gregory P. Lopinski
Keyword(s):  
Silicon On Insulator ◽  
Electrical Detection ◽  
Highly Sensitive ◽  
Passivated Silicon

8-ch, 160-nm-Wavelength-Range Membrane Laser Array Using Selective Epitaxy on InP-on-Insulator Substrate

2021 ◽  
Author(s):  
Takuro Fujii ◽  
Tomonari Sato ◽  
Nikolaos-Panteleimon Diamantopoulos ◽  
Koji Takeda ◽  
Hidetaka Nishi ◽  
...  
Keyword(s):  
Wavelength Range ◽  
Laser Array ◽  
Selective Epitaxy ◽  
Insulator Substrate

650 GHz SIS mixer fabricated on silicon‐on‐insulator substrate

2013 ◽  
Vol 49 (20) ◽  
pp. 1273-1275 ◽  
Author(s):  
B.‐K. Tan ◽  
G. Yassin ◽  
P. Grimes ◽  
K. Jacobs
Keyword(s):  
Silicon On Insulator ◽  
Sis Mixer ◽  
Insulator Substrate
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