Generalized synthesis of metal sulfide nanocrystals from single-source precursors: size, shape and chemical composition control and their properties

CrystEngComm ◽  
2011 ◽  
Vol 13 (14) ◽  
pp. 4572 ◽  
Author(s):  
Shuling Shen ◽  
Yejun Zhang ◽  
Long Peng ◽  
Bing Xu ◽  
Yaping Du ◽  
...  
1999 ◽  
Vol 606 ◽  
Author(s):  
Mike R. Lazell ◽  
Paul O'brien ◽  
David J. Otway ◽  
Jin-Ho Park

AbstractSeveral single-source precursors including In(SOCNiBu2)3, In(S2CNMeHex)3 and Ga(S2CNMeR)3, (R = Et, Bu, Hex) have been prepared and used for the deposition of Group 13 metal sulfide thin films. The α and β-In2S3thin films on borosilicate glass and oc-Ga 2S3thin films on GaAs(111) single crystal substrates were prepared from the precursors by various chemical vapour deposition (CVD) techniques. These semicondcuting materials have been characterized by XRD, SEM, XPS and EDAX.


2010 ◽  
Vol 39 (6) ◽  
pp. 1460-1463 ◽  
Author(s):  
Karthik Ramasamy ◽  
Mohammad A. Malik ◽  
Paul O'Brien ◽  
James Raftery

2010 ◽  
Vol 20 (32) ◽  
pp. 6612 ◽  
Author(s):  
Ilan Jen-La Plante ◽  
Tahani W. Zeid ◽  
Peidong Yang ◽  
Taleb Mokari

2011 ◽  
Vol 21 (26) ◽  
pp. 9737 ◽  
Author(s):  
Masood Akhtar ◽  
Javeed Akhter ◽  
M. Azad Malik ◽  
Paul O'Brien ◽  
Floriana Tuna ◽  
...  

2007 ◽  
Vol 692 (23) ◽  
pp. 5285-5294 ◽  
Author(s):  
Anshu Singhal ◽  
Dimple P. Dutta ◽  
Avesh K. Tyagi ◽  
Shaikh M. Mobin ◽  
Pradeep Mathur ◽  
...  

2018 ◽  
Vol 47 (8) ◽  
pp. 2719-2726 ◽  
Author(s):  
Zahra Ali ◽  
Nathaniel E. Richey ◽  
Duane C. Bock ◽  
Khalil A. Abboud ◽  
Javeed Akhtar ◽  
...  

Readily available N,N-disubstituted-N′-acylthiourea complexes are single source precursors for aerosol assisted chemical vapor deposition of metal sulfide thin films.


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