The Use of Single-Source Precursors for the Solution–Liquid–Solid Growth of Metal Sulfide Semiconductor Nanowires

2008 ◽  
Vol 47 (17) ◽  
pp. 3215-3218 ◽  
Author(s):  
Jianwei Sun ◽  
William E. Buhro
1999 ◽  
Vol 606 ◽  
Author(s):  
Mike R. Lazell ◽  
Paul O'brien ◽  
David J. Otway ◽  
Jin-Ho Park

AbstractSeveral single-source precursors including In(SOCNiBu2)3, In(S2CNMeHex)3 and Ga(S2CNMeR)3, (R = Et, Bu, Hex) have been prepared and used for the deposition of Group 13 metal sulfide thin films. The α and β-In2S3thin films on borosilicate glass and oc-Ga 2S3thin films on GaAs(111) single crystal substrates were prepared from the precursors by various chemical vapour deposition (CVD) techniques. These semicondcuting materials have been characterized by XRD, SEM, XPS and EDAX.


2010 ◽  
Vol 39 (6) ◽  
pp. 1460-1463 ◽  
Author(s):  
Karthik Ramasamy ◽  
Mohammad A. Malik ◽  
Paul O'Brien ◽  
James Raftery

Small ◽  
2011 ◽  
pp. n/a-n/a ◽  
Author(s):  
Zhe Wang ◽  
Zhen Li ◽  
Andreas Kornowski ◽  
Xuedan Ma ◽  
Anton Myalitsin ◽  
...  

2010 ◽  
Vol 20 (32) ◽  
pp. 6612 ◽  
Author(s):  
Ilan Jen-La Plante ◽  
Tahani W. Zeid ◽  
Peidong Yang ◽  
Taleb Mokari

2018 ◽  
Vol 47 (8) ◽  
pp. 2719-2726 ◽  
Author(s):  
Zahra Ali ◽  
Nathaniel E. Richey ◽  
Duane C. Bock ◽  
Khalil A. Abboud ◽  
Javeed Akhtar ◽  
...  

Readily available N,N-disubstituted-N′-acylthiourea complexes are single source precursors for aerosol assisted chemical vapor deposition of metal sulfide thin films.


2009 ◽  
Vol 131 (44) ◽  
pp. 16177-16188 ◽  
Author(s):  
Alfred J. Wooten ◽  
Donald J. Werder ◽  
Darrick J. Williams ◽  
Joanna L. Casson ◽  
Jennifer A. Hollingsworth

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