Metal complexes of thiobiurets and dithiobiurets: Novel single source precursors for metal sulfide thin film nanostructures

2010 ◽  
Vol 39 (6) ◽  
pp. 1460-1463 ◽  
Author(s):  
Karthik Ramasamy ◽  
Mohammad A. Malik ◽  
Paul O'Brien ◽  
James Raftery
1999 ◽  
Vol 606 ◽  
Author(s):  
Mike R. Lazell ◽  
Paul O'brien ◽  
David J. Otway ◽  
Jin-Ho Park

AbstractSeveral single-source precursors including In(SOCNiBu2)3, In(S2CNMeHex)3 and Ga(S2CNMeR)3, (R = Et, Bu, Hex) have been prepared and used for the deposition of Group 13 metal sulfide thin films. The α and β-In2S3thin films on borosilicate glass and oc-Ga 2S3thin films on GaAs(111) single crystal substrates were prepared from the precursors by various chemical vapour deposition (CVD) techniques. These semicondcuting materials have been characterized by XRD, SEM, XPS and EDAX.


2003 ◽  
Vol 431-432 ◽  
pp. 63-67 ◽  
Author(s):  
J.A. Hollingsworth ◽  
K.K. Banger ◽  
M.H.-C. Jin ◽  
J.D. Harris ◽  
J.E. Cowen ◽  
...  

2010 ◽  
Vol 20 (32) ◽  
pp. 6612 ◽  
Author(s):  
Ilan Jen-La Plante ◽  
Tahani W. Zeid ◽  
Peidong Yang ◽  
Taleb Mokari

2002 ◽  
Vol 16 (11) ◽  
pp. 617-627 ◽  
Author(s):  
Kulbinder K. Banger ◽  
Jennifer A. Hollingsworth ◽  
Jerry D. Harris ◽  
Jonathan Cowen ◽  
William E. Buhro ◽  
...  

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