Growth of Indium‐Tin‐Oxide Thin Films by Atomic Layer Epitaxy

1995 ◽  
Vol 142 (10) ◽  
pp. 3538-3541 ◽  
Author(s):  
Timo Asikainen ◽  
Mikko Ritala ◽  
Markku Leskelä
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Oxide Thin Films

Cadmium Sulphide Thin Films Grown By Atomic Layer Epitaxy

1991 ◽  
Vol 222 ◽  
Author(s):  
Aimo Rautiainen ◽  
Yrjö Koskinen ◽  
Jarmo Skarp ◽  
Sven Lindfors
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Inorganic Compounds ◽  
Substrate Surface ◽  
Cadmium Sulphide ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Elemental Reactants ◽  
Cds Films

ABSTRACTPolycrystalline cadmium sulphide (CdS) thin films were grown by Atomic Layer Epitaxy (ALE) using indium tin oxide and tin oxide coated glass substrates. Some of the experiments were made using elemental reactants, and others with inorganic compounds as reactants. Films were characterized using various techniques such as XRD, SEM and optical transmission spectroscopy. Growth rate of CdS films was observed to be 1/4 - 1/3 monolayer per cycle with elemental reactants. A full monolayer/cycle coverage was obtained when using CdCl2 and H2S as reactants. The crystalline structure of the CdS films wis β-cubic (111) when using elemental reactants. The mixed structure was observed when inorganic compounds were used as reactants. Only the hexagonal phase was observed, when substrate surface was pretreated before CdS deposition.

scholarly journals Atomic Layer Deposition of Indium Tin Oxide Thin Films Using Nonhalogenated Precursors

2008 ◽  
Vol 112 (6) ◽  
pp. 1938-1945 ◽  
Author(s):  
Jeffrey W. Elam ◽  
David A. Baker ◽  
Alex B. F. Martinson ◽  
Michael J. Pellin ◽  
Joseph T. Hupp
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Atomic Layer ◽  
Oxide Thin Films ◽  
Layer Deposition

Plasma-assisted deposition of indium tin oxide thin films by sublimation using an anodic vacuum arc discharge

2021 ◽  
pp. 138731
Author(s):  
Bert Scheffel ◽  
Olaf Zywitzki ◽  
Thomas Preußner ◽  
Torsten Kopte
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Arc Discharge ◽  
Vacuum Arc ◽  
Oxide Thin Films

Growth of gallium oxide thin films from gallium acetylacetonate by atomic layer epitaxy

1996 ◽  
Vol 6 (1) ◽  
pp. 27-31 ◽  
Author(s):  
Minna Nieminen ◽  
Lauri Niinistö ◽  
Eero Rauhala
Keyword(s):  
Thin Films ◽  
Gallium Oxide ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Oxide Thin Films

Study on the physical properties of indium tin oxide thin films deposited by microwave-assisted spray pyrolysis

2017 ◽  
Vol 728 ◽  
pp. 1338-1345 ◽  
Author(s):  
Lihua Zhang ◽  
Jianbo Lan ◽  
Jianyu Yang ◽  
Shenghui Guo ◽  
Jinhui Peng ◽  
...  
Keyword(s):  
Thin Films ◽  
Physical Properties ◽  
Spray Pyrolysis ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Oxide Thin Films ◽  
Microwave Assisted

Optical Degradation of Indium Tin Oxide Thin Films Induced by Hydrogen-Related Room Temperature Reduction

2003 ◽  
Vol 42 (Part 2, No. 5B) ◽  
pp. L546-L548 ◽  
Author(s):  
Yu Wang ◽  
Wan Ping Chen ◽  
Kei Chun Cheng ◽  
Helen Lai Wah Chan ◽  
Chung Loong Choy
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Room Temperature ◽  
Oxide Thin Films ◽  
Temperature Reduction
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