scholarly journals Practical photon number detection with electric field-modulated silicon avalanche photodiodes

2012 ◽  
Vol 3 (1) ◽  
Author(s):  
O. Thomas ◽  
Z.L. Yuan ◽  
A.J. Shields
Keyword(s):  
Electric Field ◽  
Avalanche Photodiodes ◽  
Photon Number

scholarly journals Probing higher order correlations of the photon field with photon number resolving avalanche photodiodes

2011 ◽  
Vol 19 (14) ◽  
pp. 13268 ◽  
Author(s):  
J. F. Dynes ◽  
Z. L. Yuan ◽  
A. W. Sharpe ◽  
O. Thomas ◽  
A. J. Shields
Keyword(s):  
Avalanche Photodiodes ◽  
Photon Number ◽  
Higher Order ◽  
Photon Field

scholarly journals Efficient photon number detection with silicon avalanche photodiodes

2011 ◽  
Author(s):  
Oliver Thomas ◽  
Zhiliang L. Yuan ◽  
James F. Dynes ◽  
Andrew W. Sharpe ◽  
Andrew J. Shields
Keyword(s):  
Avalanche Photodiodes ◽  
Photon Number

scholarly journals Fine Control of the Electric Field Distribution in the Heterostructure Multiplication Region of AlGaN Avalanche Photodiodes

2017 ◽  
Vol 9 (3) ◽  
pp. 1-7 ◽  
Author(s):  
Haifan You ◽  
Zhenguang Shao ◽  
Yiran Wang ◽  
Liqun Hu ◽  
Dunjun Chen ◽  
...  
Keyword(s):  
Electric Field ◽  
Field Distribution ◽  
Electric Field Distribution ◽  
Avalanche Photodiodes ◽  
Fine Control

Mean multiplication gain and excess noise factor of GaN and Al0.45Ga0.55N avalanche photodiodes

2020 ◽  
Vol 92 (1) ◽  
pp. 10301
Author(s):  
Tat Lung Wesley Ooi ◽  
Pei Ling Cheang ◽  
Ah Heng You ◽  
Yee Kit Chan
Keyword(s):  
Electric Field ◽  
Impact Ionization ◽  
Avalanche Photodiodes ◽  
Monte Carlo Model ◽  
Noise Factor ◽  
Excess Noise ◽  
Excess Noise Factor ◽  
Multiplication Gain ◽  
Ionization Coefficients ◽  
The Impact

In this work, Monte Carlo model is developed to investigate the avalanche characteristics of GaN and Al0.45Ga0.55N avalanche photodiodes (APDs) using random ionization path lengths incorporating dead space effect. The simulation includes the impact ionization coefficients, multiplication gain and excess noise factor for electron- and hole-initiated multiplication with a range of thin multiplication widths. The impact ionization coefficient for GaN is higher than that of Al0.45Ga0.55N. For GaN, electron dominates the impact ionization at high electric field while hole dominate at low electric field whereas Al0.45Ga0.55N has hole dominate the impact ionization at higher field while electron dominate the lower field. In GaN APDs, electron-initiated multiplication is leading the multiplication gain at thinner multiplication widths while hole-initiated multiplication leads for longer widths. However for Al0.45Ga0.55N APDs, hole-initiated multiplication leads the multiplication gain for all multiplication widths simulated. The excess noise of electron-initiated multiplication in GaN APDs increases as multiplication widths increases while the excess noise decreases as the multiplication widths increases for hole-initiated multiplication. As for Al0.45Ga0.55N APDs, the excess noise for hole-initiated multiplication increases when multiplication width increases while the electron-initiated multiplication increases with the same gradient at all multiplication widths.

Photon-number resolving capability in SiPMs with electric field variation for radiation detection applications

2019 ◽  
Vol 155 ◽  
pp. 101-106 ◽  
Author(s):  
Kyung Taek Lim ◽  
Hyoungtaek Kim ◽  
Myungsoo Kim ◽  
Yewon Kim ◽  
Chang-yeop Lee ◽  
...  
Keyword(s):  
Electric Field ◽  
Photon Number ◽  
Radiation Detection ◽  
Field Variation ◽  
Electric Field Variation

scholarly journals Interface electric field confinement effect of high-sensitivity lateral Ge/Si avalanche photodiodes

2019 ◽  
Vol 24 (1) ◽  
pp. 1-8
Author(s):  
Wenzhou Wu ◽  
Zhi Liu ◽  
Jun Zheng ◽  
Yuhua Zuo ◽  
Buwen Cheng
Keyword(s):  
Electric Field ◽  
Avalanche Photodiodes ◽  
High Sensitivity ◽  
Confinement Effect

scholarly journals Efficient photon number detection with silicon avalanche photodiodes

2010 ◽  
Vol 97 (3) ◽  
pp. 031102 ◽  
Author(s):  
O. Thomas ◽  
Z. L. Yuan ◽  
J. F. Dynes ◽  
A. W. Sharpe ◽  
A. J. Shields
Keyword(s):  
Avalanche Photodiodes ◽  
Photon Number

Distribution of electric field and design of devices in GaN avalanche photodiodes

2012 ◽  
Vol 55 (4) ◽  
pp. 619-624 ◽  
Author(s):  
LiangLiang Wu ◽  
DeGang Zhao ◽  
Yi Deng ◽  
DeSheng Jiang ◽  
JianJun Zhu ◽  
...  
Keyword(s):  
Electric Field ◽  
Avalanche Photodiodes ◽  
Distribution Of Electric Field
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