Circuit model simulation for separate absorption, grading and multiplication avalanche photodiodes (SAGM-APD) considering gradual changes of the electric field in active region

2007 ◽  
Author(s):  
M.R. Abbasi ◽  
M.H. Sheikhi ◽  
A. Zarifkar
Keyword(s):  
Active Region ◽  
Electric Field ◽  
Model Simulation ◽  
Avalanche Photodiodes ◽  
Circuit Model

scholarly journals Fine Control of the Electric Field Distribution in the Heterostructure Multiplication Region of AlGaN Avalanche Photodiodes

2017 ◽  
Vol 9 (3) ◽  
pp. 1-7 ◽  
Author(s):  
Haifan You ◽  
Zhenguang Shao ◽  
Yiran Wang ◽  
Liqun Hu ◽  
Dunjun Chen ◽  
...  
Keyword(s):  
Electric Field ◽  
Field Distribution ◽  
Electric Field Distribution ◽  
Avalanche Photodiodes ◽  
Fine Control

scholarly journals Electric Currents Connected With the Proton Flares of 7 July and 2 September, 1966

1971 ◽  
Vol 43 ◽  
pp. 417-421
Author(s):  
A. B. Severny
Keyword(s):  
Active Region ◽  
Field Strength ◽  
Magnetic Flux ◽  
Electric Field ◽  
Electric Field Strength ◽  
Electric Conductivity ◽  
Electric Current ◽  
Current Density ◽  
High Energy ◽  
Electric Currents

It is observed that the change of the net magnetic flux associated with flares can exceed 1017 Mx/s, which corresponds according to Maxwell's equation to the e.m.f. ∼ 109 V which is specific for the high energy protons generated in flares. It is shown that this value of e.m.f. can hardly be compensated by e.m.f. of inductance which should appear due to the actually measured motions in a flare generating active region. The values of electric field strength thus found, together with measured values of electric current density (from rotH), leads to an electric conductivity which is 103 times smaller than usually adopted.

scholarly journals Study of electric field in SiPM active volume by the volt-farad characteristics analysis

2019 ◽  
Vol 204 ◽  
pp. 07008
Author(s):  
V. Kushpil ◽  
V. Ladygin ◽  
S. Kushpil
Keyword(s):  
Active Region ◽  
Electric Field ◽  
Standard Method ◽  
Local Instability ◽  
Active Volume ◽  
Optical Isolation ◽  
Characteristics Analysis ◽  
Parallel Circuit ◽  
Method Of Measurement ◽  
Relative Analysis

The purpose of this study is to understand the change of the SiPM structure after irradiation. We compared the profile of the electric field in the SiPM (KETEK) active region for ten not-irradiated and irradiated detectors. The standard method of measurement of C-V characteristics was applied using two configurations (serial and parallel circuit) to exclude the influence of the serial resistance. Dependencies of capacitance on the frequency were studied in the range from 10 to 1000 KHz. For non-irradiated detectors we detected in CV characteristics the local instability basically connected with accumulation of charge on boundary optical isolation-silicon. In addition, the hysteresis of CV characteristics was detected. For irradiated detectors the local instability was visible as well but the hysteresis of CV characteristics was not detected. The results demonstrate that the applied method can be used for the relative analysis of how SiPM active region properties changed after irradiation.

SiC-MOSFET Structure Enabling Fast Turn-On and -Off Switching

2012 ◽  
Vol 717-720 ◽  
pp. 1097-1100 ◽  
Author(s):  
Shiro Hino ◽  
Naruhisa Miura ◽  
Akihiko Furukawa ◽  
Shoyu Watanabe ◽  
Yukiyasu Nakao ◽  
...  
Keyword(s):  
Electric Field ◽  
Equivalent Circuit ◽  
High Speed ◽  
Equivalent Circuit Model ◽  
Circuit Model ◽  
Turn On ◽  
Model Based ◽  
Switching Losses ◽  
High Speed Switching

High speed switching is desired to reduce switching losses of SiC-MOSFETs. In order to realize SiC-MOSFETs capable of high speed switching, we numerically evaluated the electric field induced in SiC-MOSFETs during switching using an equivalent circuit model. Based on the evaluation, we designed a SiC-MOSFET, which successfully demonstrated high speed switching with a dV/dt of over 70 V/ns.

Mean multiplication gain and excess noise factor of GaN and Al0.45Ga0.55N avalanche photodiodes

2020 ◽  
Vol 92 (1) ◽  
pp. 10301
Author(s):  
Tat Lung Wesley Ooi ◽  
Pei Ling Cheang ◽  
Ah Heng You ◽  
Yee Kit Chan
Keyword(s):  
Electric Field ◽  
Impact Ionization ◽  
Avalanche Photodiodes ◽  
Monte Carlo Model ◽  
Noise Factor ◽  
Excess Noise ◽  
Excess Noise Factor ◽  
Multiplication Gain ◽  
Ionization Coefficients ◽  
The Impact

In this work, Monte Carlo model is developed to investigate the avalanche characteristics of GaN and Al0.45Ga0.55N avalanche photodiodes (APDs) using random ionization path lengths incorporating dead space effect. The simulation includes the impact ionization coefficients, multiplication gain and excess noise factor for electron- and hole-initiated multiplication with a range of thin multiplication widths. The impact ionization coefficient for GaN is higher than that of Al0.45Ga0.55N. For GaN, electron dominates the impact ionization at high electric field while hole dominate at low electric field whereas Al0.45Ga0.55N has hole dominate the impact ionization at higher field while electron dominate the lower field. In GaN APDs, electron-initiated multiplication is leading the multiplication gain at thinner multiplication widths while hole-initiated multiplication leads for longer widths. However for Al0.45Ga0.55N APDs, hole-initiated multiplication leads the multiplication gain for all multiplication widths simulated. The excess noise of electron-initiated multiplication in GaN APDs increases as multiplication widths increases while the excess noise decreases as the multiplication widths increases for hole-initiated multiplication. As for Al0.45Ga0.55N APDs, the excess noise for hole-initiated multiplication increases when multiplication width increases while the electron-initiated multiplication increases with the same gradient at all multiplication widths.

Sign in / Sign up

Export Citation Format

Share Document