scholarly journals Efficient photon number detection with silicon avalanche photodiodes

2011 ◽  
Author(s):  
Oliver Thomas ◽  
Zhiliang L. Yuan ◽  
James F. Dynes ◽  
Andrew W. Sharpe ◽  
Andrew J. Shields
Keyword(s):  
Avalanche Photodiodes ◽  
Photon Number

scholarly journals Probing higher order correlations of the photon field with photon number resolving avalanche photodiodes

2011 ◽  
Vol 19 (14) ◽  
pp. 13268 ◽  
Author(s):  
J. F. Dynes ◽  
Z. L. Yuan ◽  
A. W. Sharpe ◽  
O. Thomas ◽  
A. J. Shields
Keyword(s):  
Avalanche Photodiodes ◽  
Photon Number ◽  
Higher Order ◽  
Photon Field

scholarly journals Efficient photon number detection with silicon avalanche photodiodes

2010 ◽  
Vol 97 (3) ◽  
pp. 031102 ◽  
Author(s):  
O. Thomas ◽  
Z. L. Yuan ◽  
J. F. Dynes ◽  
A. W. Sharpe ◽  
A. J. Shields
Keyword(s):  
Avalanche Photodiodes ◽  
Photon Number

scholarly journals Photon-number-resolving segmented detectors based on single-photon avalanche-photodiodes

2020 ◽  
Vol 28 (3) ◽  
pp. 3660 ◽  
Author(s):  
Rajveer Nehra ◽  
Chun-Hung Chang ◽  
Qianhuan Yu ◽  
Andreas Beling ◽  
Olivier Pfister
Keyword(s):  
Single Photon ◽  
Avalanche Photodiodes ◽  
Photon Number ◽  
Segmented Detectors ◽  
Single Photon Avalanche Photodiodes

Amorphous Si/SiC phototransistors and avalanche photodiodes

1991 ◽  
Vol 138 (3) ◽  
pp. 226 ◽  
Author(s):  
C.Y. Chang ◽  
J.W. Hong ◽  
Y.K. Fang
Keyword(s):  
Avalanche Photodiodes ◽  
Amorphous Si

Multiple Quantum Barrier Nano-avalanche Photodiodes - Part III: Time and Frequency Responses

2019 ◽  
Vol 9 (2) ◽  
pp. 192-197
Author(s):  
Somrita Ghosh ◽  
Aritra Acharyya
Keyword(s):  
Optical Pulse ◽  
Pulse Current ◽  
Avalanche Photodiodes ◽  
Simulation Method ◽  
Rectangular Pulse ◽  
Operating Conditions ◽  
Multiple Quantum ◽  
Material System ◽  
Frequency Responses ◽  
The Fourier Transform

Background: The time and frequency responses of Multiple Quantum Barrier (MQB) nano-scale Avalanche Photodiodes (APDs) based on Si~3C-SiC material system have been investigated in this final part. Methods: A very narrow rectangular pulse of pulse-width of 0.4 ps has been used as the input optical pulse having 850 nm wavelength incidents on the p+-side of the MQB APD structures and corresponding current responses have been calculated by using a simulation method developed by the authors. Results: Finally the frequency responses of the devices are obtained via the Fourier transform of the corresponding pulse current responses in time domain. Conclusion: Simulation results show that MQB nano-APDs possess significantly faster time response and wider frequency response as compared to the flat Si nano-APDs under similar operating conditions.

InP/InGaAs buried-structure avalanche photodiodes

1984 ◽  
Vol 20 (4) ◽  
pp. 158 ◽  
Author(s):  
K. Yasuda ◽  
Y. Kishi ◽  
T. Shirai ◽  
T. Mikawa ◽  
S. Yamazaki ◽  
...  
Keyword(s):  
Avalanche Photodiodes
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