Undercoordinated indium as an intrinsic electron-trap center in amorphous InGaZnO4

Ho-Hyun Nahm; Yong-Sung Kim

doi:10.1038/am.2014.103

Undercoordinated indium as an intrinsic electron-trap center in amorphous InGaZnO4

NPG Asia Materials ◽

10.1038/am.2014.103 ◽

2014 ◽

Vol 6 (11) ◽

pp. e143-e143 ◽

Cited By ~ 22

Author(s):

Ho-Hyun Nahm ◽

Yong-Sung Kim

Keyword(s):

Electron Trap ◽

Trap Center

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Properties of dominant electron trap center in n-type SiC epilayers by means of deep level transient spectroscopy

Journal of Applied Physics ◽

10.1063/1.2715534 ◽

2007 ◽

Vol 101 (7) ◽

pp. 073706 ◽

Cited By ~ 10

Author(s):

M. Asghar ◽

I. Hussain ◽

H. S. Noor ◽

F. Iqbal ◽

Q. Wahab ◽

...

Keyword(s):

Deep Level Transient Spectroscopy ◽

Deep Level ◽

Electron Trap ◽

Trap Center ◽

Transient Spectroscopy

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Electron trap center generation due to hole trapping in SiO2under Fowler–Nordheim tunneling stress

Applied Physics Letters ◽

10.1063/1.98413 ◽

1987 ◽

Vol 51 (6) ◽

pp. 433-435 ◽

Cited By ~ 50

Author(s):

Hidetsugu Uchida ◽

Tsuneo Ajioka

Keyword(s):

Electron Trap ◽

Trap Center ◽

Hole Trapping ◽

Nordheim Tunneling

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Non-Visible Defect Analysis of OTP Device

ISTFA 2011: Conference Proceedings from the 37th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2011p0198 ◽

2011 ◽

Author(s):

C.Q. Chen ◽

G.B. Ang ◽

Z.X. Xing ◽

Y.N. Hua ◽

Z.Q. Mo ◽

...

Keyword(s):

Trap Center ◽

Data Retention ◽

Auger Analysis ◽

Cross Sectional ◽

Critical Dimensions ◽

Charge Trap ◽

Root Cause ◽

Transmission Electron ◽

Electrical Analysis ◽

Visible Defect

Abstract Several product lots were found to suffer from data retention failures in OTP (one time program) devices. PFA (physical failure analysis) was performed on these devices, but nothing abnormal was observed. Cross-sectional TEM (transmission electron microscopy) revealed no physical defects or abnormal CDs (critical dimensions). In order to isolate the failed layer or location, electrical analysis was conducted. Several electrical simulation experiments, designed to test the data retention properties of OTP devices, were preformed. Meilke's method [1] was also used to differentiate between mobile ion contamination and charge trap centers. Besides Meilke's method, a new electrical analysis method was used to verify the analysis results. The results of our analysis suggests that SiN charge trap centers are the root cause for the data retention failures, and the ratio of Si/N is the key to charge trap center formation. Auger analysis was used to physically check the Si/N ratio of OTP devices. The results support our hypothesis. Subsequent DOE (Design Of Experiment) experiments also confirm our analysis results. Key Words: OTP, data retention, Non-visible defect, AFP, charge trap center, mobile ion.

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