Copper as an electron trap in GaAs0.6P0.4

1994 ◽  
Vol 59 (3) ◽  
pp. 245-251 ◽  
Author(s):  
H. S. Tan ◽  
M. K. Han ◽  
P. Y. Hu ◽  
J. H. Zheng ◽  
S. C. Ng ◽  
...  
Keyword(s):  
Electron Trap

Spatial location of the Ec-0.6 eV electron trap in AlGaN/GaN heterojunctions

2014 ◽  
Vol 32 (5) ◽  
pp. 050602 ◽  
Author(s):  
In-Hwan Lee ◽  
Alexander Y. Polyakov ◽  
Nikolai B. Smirnov ◽  
Cheol-Koo Hahn ◽  
S. J. Pearton
Keyword(s):  
Spatial Location ◽  
Electron Trap

Fewer-junction single-electron trap with an ohmic resistor

2000 ◽  
Vol 280 (1-4) ◽  
pp. 403-404
Author(s):  
Sergey V. Lotkhov ◽  
Hermann Zangerle ◽  
Alexander B. Zorin ◽  
Jürgen Niemeyer
Keyword(s):  
Electron Trap ◽  
Single Electron

scholarly journals A hybrid superconductor-normal metal electron trap as a photon detector

2012 ◽  
Vol 100 (24) ◽  
pp. 242601 ◽  
Author(s):  
S. V. Lotkhov ◽  
A. B. Zorin
Keyword(s):  
Electron Trap ◽  
Normal Metal ◽  
Photon Detector ◽  
Metal Electron

Oxygen vacancy induced electron traps in tungsten doped Bi2MoO6 for enhanced photocatalytic performance

CrystEngComm ◽  
2021 ◽  
Author(s):  
Chang Sun ◽  
Zitong Zhao ◽  
Hougang Fan ◽  
Yanli Chen ◽  
Xiaoyan Liu ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Recombination Rate ◽  
Oxygen Vacancies ◽  
Photocatalytic Performance ◽  
Electron Trap ◽  
Electron Traps

As the concentration of the W dopant increased in the Bi2Mo1−xWxO6 nanosheets, the density of the oxygen vacancies became higher, which served as electron trap centers to lower the recombination rate and enhance the photocatalytic performance.

Deep Donor and Acceptor Levels Induced by High Temperature and long time Annealing in LEC Gallium Arsenide

1991 ◽  
Vol 240 ◽  
Author(s):  
G. Marrakchi ◽  
A. Kalboussi ◽  
G. Guillot ◽  
M. Ben Salem ◽  
H. Maaref ◽  
...  
Keyword(s):  
High Temperature ◽  
Cold Water ◽  
Deep Level ◽  
Electron Trap ◽  
Single Donor ◽  
Long Duration ◽  
Donor And Acceptor ◽  
Deep Donor ◽  
Long Time ◽  
Lec Gaas

ABSTRACTThe effects of high temperature isothermal annealing on the electrical properties of donor and acceptor defects in n-type LEC GaAs are investigated. The annealing experiments are performed under As-rich atmosphere at 1000°C for 1–4 and 16 hours followed by a very quick quenching into cold water of the quartz ampoules containing the samples. The donor and acceptor levels are detected respectively by standard (DLTS) and optical (ODLTS) deep level spectroscopy. DLTS results show the presence of one single donor level present in unannealed and annealed samples at Ec - 0.79eV which is identified as the well known electron trap EL2 Only the sample annealed for 16 hs exhibits the presence of a new electron trap named TAI at Ec - 0.32eV. The appearance of TAI is correlated in one hand with the evolution of EL2 concentration and in the other hand to the effect of long duration (16 hs) of the treatment. For acceptor levels, two hole traps HT1 and HT2 are detected respectively at EV + 0.18 eV and EV+ 0.28 eV. HT1 is detected only in samples annealed for 4 and 16 hs and HT2 is detected in all studied samples. Photoluminescence (PL) measurements show the presence of the 1.44 eV band corresponding to gallium antisite GaAs defect. This band observed in unannealed and annealed samples shows that GaAs remains stable even after thermal annealing at lOOO°C for 16 hs and it is correlated with the presence of HT2.

Study of Substrate Induced Deep Level Defects in Bulk GaN Layers Grown by Molecular Beam Epitaxy Using Deep Level Transient Spectroscopy

2011 ◽  
Vol 295-297 ◽  
pp. 777-780 ◽  
Author(s):  
M. Ajaz Un Nabi ◽  
M. Imran Arshad ◽  
Adnan Ali ◽  
M. Asghar ◽  
M. A Hasan
Keyword(s):  
Molecular Beam Epitaxy ◽  
Deep Level Transient Spectroscopy ◽  
Molecular Beam ◽  
Deep Level ◽  
Diffusion Mechanism ◽  
Electron Trap ◽  
Si Substrate ◽  
Bulk Gan ◽  
Related Defect ◽  
Transient Spectroscopy

In this paper we have investigated the substrate-induced deep level defects in bulk GaN layers grown onp-silicon by molecular beam epitaxy. Representative deep level transient spectroscopy (DLTS) performed on Au-GaN/Si/Al devices displayed only one electron trap E1at 0.23 eV below the conduction band. Owing to out-diffusion mechanism; silicon diffuses into GaN layer from Si substrate maintained at 1050°C, E1level is therefore, attributed to the silicon-related defect. This argument is supported by growth of SiC on Si substrate maintained at 1050°C in MBE chamber using fullerene as a single evaporation source.

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